Abstract: A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first conductive type semiconductor layer including P-type dopants and having a plurality of holes, an electrode connected to the first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, a second conductive type semiconductor layer under the active layer, and an electrode layer under the second conductive type semiconductor layer.

Abstract: A light emitting device package includes a first frame and a second frame disposed to be spaced apart from each other; a body disposed between the first and second frames and comprising a recess; a first adhesive on the recess; a light emitting device on the first adhesive; a second adhesive disposed between the first and second frames and the light emitting device; and a resin portion disposed to surround the second adhesive and a partial region of the light emitting device.

Abstract: Provided is a nitride semiconductor light-emitting device. The device includes a buffer layer, a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer. The buffer layer comprises amorphous metal. The first conduction type semiconductor layer is on the buffer layer, and the active layer is on the first conduction type semiconductor layer. The second conduction type semiconductor layer is on the active layer.

Abstract: Provided are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first conductive type semiconductor layer, a light emitting layer over the first conductive type semiconductor layer, an electron blocking layer over the light emitting layer, and a second conductive type semiconductor layer over the electron blocking layer. The electron blocking layer comprises a pattern having a height difference.

Abstract: An embodiment provides a light emitting element comprising: a first conductive semiconductor layer including a first layer and a second layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a first electrode and a second electrode arranged on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, wherein the first layer includes a plurality of first grooves, and a growth prevention layer is arranged on the bottom surface and side surfaces of each of the first grooves.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a reflective layer, a second conductive type semiconductor layer on the reflective layer, an active layer on the second conductive type semiconductor layer, a first conductive type semiconductor layer on the active layer, and a pad electrode on the first conductive type semiconductor layer. The reflective layer comprises a predetermined pattern.

Abstract: Provided are an apparatus and method for driving LEDs. The apparatus comprise a plurality of red, green, and blue light emitting diodes connected, respectively; switching units turned on or off by an inputted pulse to turn on or off the red, green and blue light emitting diodes, respectively; and a control unit outputting respective pulses to sequentially delay a turn-on or turn-off time between the switching units.

Abstract: A method for fabricating a nitride semiconductor light emitting device, and a nitride semiconductor light emitting device fabricated thereby are provided. The method includes: forming a first conductive nitride semiconductor layer on a substrate; forming an active layer on the first conductive nitride semiconductor layer; forming a second conductive nitride semiconductor layer on the active layer; and lowering a temperature while adding oxygen to the result by performing a thermal process.

Abstract: The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit light; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. According to the present invention, the crystallinity of the active layer is enhanced, and optical power and reliability are also enhanced.

Abstract: A semiconductor light emitting device including a second electrode layer; a light emitting unit including a plurality of compound semiconductor layers under one portion of the second electrode layer; a first insulating layer under the other portion of the second electrode; an electrostatic protection unit including a plurality of compound semiconductor layer under the first insulating layer; a first electrode layer electrically connecting the light emitting unit to the electrostatic protection unit; and a wiring layer electrically connecting the electrostatic protection unit to the second electrode layer.

Abstract: Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer includes an insulation layer including protrusions having a predetermined interval and a void between the protrusions of the insulation layer. The active layer is disposed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is disposed on the active layer.

Abstract: One embodiment provides a semiconductor device comprising: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the first semiconductor layer; a third semiconductor layer disposed on the second semiconductor layer; and a reflective layer disposed on the third semiconductor layer, wherein the part between the first and second semiconductor layers, the part between the third and second semiconductor layers, and the second semiconductor layer comprise a depletion region, and the conductivity of the first semiconductor layer and the conductivity of the third semiconductor layer are different from each other, and the second semiconductor layer comprises an intrinsic semiconductor layer.

Abstract: A light emitting device includes a substrate, a light extraction layer provided over the substrate and a light emitting structure provided over the light extraction layer. The light extraction layer has a refraction index higher than a refraction index of the substrate and lower than a refraction index of the light emitting structure. The light extraction layer has a first region contacting the substrate and a second region provided opposite to the first region. The first region has a greater cross-sectional area than a cross-sectional area of the second region.

Abstract: There are provided a nitride semiconductor light-emitting device and a method for manufacturing the same. The nitride semiconductor light-emitting device includes a buffer layer on a sapphire substrate, wherein the buffer layer includes a plurality of layers having different lattice constants, a first n-type nitride semiconductor layer on the buffer layer, an active layer on the first n-type nitride semiconductor layer, and a p-type nitride semiconductor layer on the active layer.

Abstract: There are provided a nitride semiconductor light-emitting device and a method for manufacturing the same. The nitride semiconductor light-emitting device includes a buffer layer on a sapphire substrate, wherein the buffer layer includes a plurality of layers having different lattice constants, a first n-type nitride semiconductor layer on the buffer layer, an active layer on the first n-type nitride semiconductor layer, and a p-type nitride semiconductor layer on the active layer.

Abstract: Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer between the first conductive type semiconductor layer and the second conductive type layer. At least one lateral surface of the light emitting structure layer has cleavage planes of an A-plane and an M-plane.

Abstract: Provided are a light emitting device, an electrode structure, a light emitting device package, and a lighting system. The light emitting device includes a conductive layer, an electrode, a light emitting structure layer disposed between the electrode and the conductive layer and comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and a light guide layer between the first semiconductor layer and the electrode.

Abstract: A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. A scribe line is formed on the substrate for separating the diodes on the substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type super lattice layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type super lattice layer comprises a second conductive type nitride layer and an undoped nitride layer on the active layer. The second conductive type semiconductor layer is formed on the second conductive type super lattice layer.