Abstract: An embodiment discloses a semiconductor element comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; and an electron blocking layer arranged between the second conducive semiconductor layer and the active layer, wherein the section of the first conductive semiconductor layer decreases in a first direction, the electron blocking layer has an area in which the section thereof increases in the first direction, and the first direction is defined from the first conductive semiconductor layer to the second conductive semiconductor layer.

Abstract: A semiconductor device according to an embodiment comprises: a substrate; a buffer layer provided on the substrate; a first conductivity type semiconductor layer provided on the buffer layer; a second conductivity type semiconductor layer; a light emitting structure, provided between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, comprising an active layer which emits ultraviolet light; and a plurality of air voids provided within the buffer layer, wherein the air voids can be formed to have two or more inclined surfaces.

Abstract: Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer between the first conductive type semiconductor layer and the second conductive type layer. At least one lateral surface of the light emitting structure layer has cleavage planes of an A-plane and an M-plane.

Abstract: A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; and a transparent electrode layer formed at least one of on and under the light emitting structure, wherein the transparent electrode layer has a thickness in a range of 30 nm to 70 nm to obtain a transmittance equal to or greater than 70% with respect to a wavelength range of light of 420 nm to 510 nm.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

Abstract: A light emitting diode including a first conductive type semiconductor layer; at least one InxGa1?xN layer (0<x<0.2) on the first conductive type semiconductor layer; an active layer directly on the at least one InxGa1?xN layer(0<x<0.2); a second conductive type semiconductor layer on the active layer; and a transparent ITO(Indium-Tin-Oxide) layer on the second conductive type semiconductor layer; wherein at least one period of the active layer comprises at least three layers including an InGaN and a GaN, and wherein the second conductive type semiconductor layer has a thickness of 750 ?˜1500 ?.

Abstract: A light emitting device, according to one embodiment, may comprise: a substrate; a first conductive semiconductor layer disposed on the substrate; an active layer disposed on the first conductive semiconductor layer and generating an ultraviolet light; a second conductive semiconductor layer disposed on the active layer; and a hole injection layer disposed between the active layer and the second conductive semiconductor layer and comprising a first layer comprising AlxGa1-xN (0<x?1) and a second layer comprising GaN. The embodiment has the hole injection layer to be multi-layered, thereby having the effect of effectively preventing the absorption of ultraviolet light.

Abstract: A light emitting device including a substrate, a first conductive type semiconductor layer on the substrate, at least one InxGa1?xN layer (0<x<0.2) on the first conductive type semiconductor layer, at least one GaN layer directly on the at least one InxGa1?N layer (0<x<0.2), an active layer on the at least one GaN layer, a second conductive type semiconductor layer on the active layer, and a transparent ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer.

Abstract: Disclosed are a light emitting device, a method of fabricating a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer (112), an InxGa1-xN layer (where, 0<x?1) (151) on the first conductive semiconductor layer (112), a GaN layer (152) on the InxGa1-xN layer (151), a first Aly1Ga1-y1N layer (where, 0<y1?1) (153) on the GaN layer (152), an active layer (114) on the first Aly1Ga1-y1N layer (153), and a second conductive semiconductor layer (116) on the active layer (114).

Abstract: A nitride semiconductor light emitting device is provided. The nitride semiconductor light emitting device includes a first nitride layer comprising at least N-type nitride layer. An insulating member is formed on the first nitride layer having a predetermined pattern. An active layer is formed in both sides of the insulating member on the first nitride layer to emit light. A second nitride layer is formed in both sides of the insulating member on the active layer and the second nitride layer comprises at least a P-type nitride layer.

Abstract: The light emitting device includes a substrate, a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a light-transmitting electrode layer. The second conductive type semiconductor layer has a thickness satisfying Equation: 2·?1+?2=N·2?±?, (0????/2), where ?1 is a phase change that is generated when light of a vertical direction passes through the second conductive type semiconductor layer, ?2 is a phase change that is generated when the light is reflected by the light-transmitting electrode layer, and N is a natural number.

Abstract: A light emitting device includes a first electrode layer (87), a second conductive semiconductor layer (13) on the first electrode layer (87), an active layer (12) on the second conductive semiconductor layer (13), and a first conductive semiconductor layer (11) on the active layer (12). An AlyGa1-yN layer (where, 0<y?1) (16) is provided over the first conductive semiconductor layer (11), and an InxGa1-xN pattern (where, 0<x?1) (15) is provided over the AlyGa1-yN layer (16). A gallium nitride semiconductor layer (14) is provided over the InxGa1-xN pattern (15); and a pad electrode (81) is provided on the gallium nitride semiconductor layer (14).

Abstract: Provided is a light emitting device. The light emitting device comprises: In one embodiment, a light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a conductive support member under the light emitting structure. The conductive support member comprises a first conductive support member and a second conductive support member. The second conductive support member has a thermal conductivity higher than that of the first conductive support member.

Abstract: A light-emitting device and a lighting system includes a first conductivity type semiconductor layer, a gallium nitride-based super lattice layer on the first conductivity type semiconductor layer, an active layer, on the gallium nitride-based super lattice layer, a second conductivity type gallium nitride-based layer on the active layer, and a second conductivity type semiconductor layer, on the second conductivity type gallium nitride-based layer. The second conductivity type gallium nitride-based layer can include a second conductivity type AlxGa(1?x)N/AlyGa(1?y)N, such as AlxGa(1?x)N/AlyGa(1?y)N, on the active layer.

Abstract: A semiconductor light emitting device includes a plurality of first conductive type semiconductor layers; a plurality of second conductive type semiconductor layers; an active layer between the first and second conductive type semiconductor layers, wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers; a first electrode connected to the first conductive type semiconductor layers; and a second electrode connected to the second conductive type semiconductor layers, wherein the first conductive type semiconductor layers includes a first and second AlGaN based layers, and the plurality of quantum well layers of the active layer include an InAlGaN layer.

Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a first light extracting structure formed on an outer portion of the first conductive type semiconductor layer and having a plurality of side surfaces and a plurality of upper surfaces formed in a step structure, and a transmissive layer on the first light extracting structure of the first conductive type semiconductor layer.

Abstract: Provided is a method for fabricating a light emitting device. The method for fabricating the light emitting device includes forming a buffer layer including a compound semiconductor in which a rare-earth element is doped on a substrate, forming a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, which are successively stacked on the buffer layer, forming a first electrode layer on the light emitting structure, removing the substrate, and forming a second electrode layer under the light emitting structure.

Abstract: A light emitting device may include a light emitting structure that includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the active layer includes a light emitting layer adjacent to the second semiconductor layer and that includes a well layer and a barrier layer and a super-lattice layer between the light emitting layer and the first semiconductor layer, the super-lattice layer including at least six pairs of a first layer and a second layer, wherein a composition of the first layer includes indium (In) and the second layer includes indium (In), and the composition of the first layer is different from the composition of the second layer.

Abstract: Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.

Abstract: Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate under a light emitting structure having an active layer. A bottom surface of the substrate includes a first portion and a second portion around the first portion, the first portion includes a first recess and the second portion includes a second recess, and the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate. The first recess and the second recess have a different depth from the bottom surface of the substrate, the first recess is formed along a transverse direction and a longitudinal direction in the bottom surface of the substrate, and the first recess and the second recess has a depth smaller than a thickness of the substrate.