Search Patents
  • Light emitting device, light emitting device package, and lighting system including the same
    Patent number: 8222660
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system including the light emitting device and the light emitting device package. The light emitting device includes a light emitting structure, a dielectric, a second electrode layer, a semiconductor region, and a first electrode. The light emitting device includes a plurality of semiconductor layers that form a heterojunction that produces light and a homojunction that protects the device from a reverse current.
    Type: Grant
    Filed: April 27, 2010
    Date of Patent: July 17, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Min Hwang
  • Light emitting device
    Patent number: 9142718
    Abstract: A light emitting device including a light emitting structure having a first conductive semiconductor layer, an active layer disposed under the active layer and a second conductive semiconductor layer disposed under the active layer; a trench formed in a portion of the light emitting structure; a current barrier layer in the trench and configured to hinder current supply to the active layer at a portion where the trench is located and to block the active layer over the trench from emitting light; and a first electrode on the first conductive semiconductor layer above the portion where the trench is located.
    Type: Grant
    Filed: December 9, 2009
    Date of Patent: September 22, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Min Hwang
  • Light emitting device, having protrusions from a conductive support member, lighting emitting device package, and lighting system
    Patent number: 8502248
    Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting structure layer including a first semiconductor layer, an active layer, and a second semiconductor layer, an electrode electrically connected to the first semiconductor layer, an electrode layer under the light emitting structure layer, and a conductive support member under the electrode layer. The conductive support member includes a protrusion projecting from at least one edge.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: August 6, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Joo Yong Jeong, Young Kyu Jeong
  • Light emitting apparatus, and method for manufacturing the same, and lighting system
    Patent number: 8294176
    Abstract: A light emitting apparatus includes: a substrate including a first conductive type impurity; a first heatsink and a second heatsink on a first region and a second region of the substrate; second conductive type impurity regions on the substrate and electrically connected to the first heatsink and the second heatsink, respectively; a first electrode electrically connected to the first heatsink on the substrate; a second electrode electrically connected to the second heatsink on the substrate; and a light emitting device electrically connected to the first electrode and the second electrode on the substrate.
    Type: Grant
    Filed: September 16, 2011
    Date of Patent: October 23, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Bum Chul Cho
  • Semiconductor light emitting device and method of fabricating the same
    Patent number: 7989820
    Abstract: Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.
    Type: Grant
    Filed: June 18, 2008
    Date of Patent: August 2, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Manufacturing method of light emitting device package
    Patent number: 10103295
    Abstract: An embodiment relates to a light emitting device package and a manufacturing method of the light emitting device package. The light emitting device package according to an embodiment may include a body having a top opened cavity, a light emitting device mounted on an inner bottom surface of the cavity, and a molding part accommodated in the cavity to protect the light emitting device, and the molding part may include a CYTOP, and thus not only light efficiency can be enhanced but also the reliability of the product can be improved with high durability.
    Type: Grant
    Filed: February 16, 2016
    Date of Patent: October 16, 2018
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Myung Hee Kim, Jung Yeop Hong
  • Light emitting device, light emitting device package and lighting system
    Patent number: 8399948
    Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a first conductive type semiconductor layer; an active layer including a barrier layer and a well layer alternately disposed on the first conductive type semiconductor layer; and a second conductive type semiconductor layer on the active layer. At least one well layer includes an indium cluster having a density of 1E11/cm2 or more.
    Type: Grant
    Filed: November 12, 2010
    Date of Patent: March 19, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Ho Sang Yoon, Sang Kyun Shim
  • Nitride semiconductor light emitting device and method of manufacturing the same
    Patent number: 8421100
    Abstract: A nitride semiconductor light emitting device is provided. The nitride semiconductor light emitting device includes a first nitride layer comprising at least N-type nitride layer. An insulating member is formed on the first nitride layer having a predetermined pattern. An active layer is formed in both sides of the insulating member on the first nitride layer to emit light. A second nitride layer is formed in both sides of the insulating member on the active layer and the second nitride layer comprises at least a P-type nitride layer.
    Type: Grant
    Filed: March 23, 2010
    Date of Patent: April 16, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Light emitting device, light emitting device package and lighting system
    Patent number: 8592843
    Abstract: Embodiments relate to a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises: a light emitting structure including a first conductive type semiconductor layer, an active layer over the first conductive type semiconductor layer, and a second conductive type semiconductor layer over the active layer; a dielectric layer formed in each of a plurality of cavities defined by removing a portion of the light emitting structure; and a second electrode layer over the dielectric layer.
    Type: Grant
    Filed: October 21, 2010
    Date of Patent: November 26, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Min Hwang
  • Light emitting device package
    Patent number: 9076949
    Abstract: A light emitting device package including a package body, at least one electrode pattern placed on the package body, at least one light emitting device electrically connected to the electrode pattern, a heat dissipation member disposed in the package body to thermally come into contact with the light emitting device, and an anti-fracture layer placed on the heat dissipation member, wherein a width of the heat dissipation member is different at different heights of the package body.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: July 7, 2015
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Byung Mok Kim, Bo Hee Kang, Ha Na Kim, Hiroshi Kodaira, Yuichiro Tanda, Satoshi Ozeki
  • Light emitting device package
    Patent number: 9337403
    Abstract: Disclosed is a light emitting device package with improved light extraction efficiency. The light emitting device package includes a substrate, a light emitting device disposed on the substrate, and a light transmission unit disposed above the light emitting device, the light transmission unit being spaced from the light emitting device, wherein a distance between an upper surface of the light emitting device and the light transmission unit is 0.15 mm to 0.35 mm.
    Type: Grant
    Filed: January 7, 2014
    Date of Patent: May 10, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Byung Mok Kim, Hiroshi Kodaira, Ha Na Kim, Yuichiro Tanda, Satoshi Ozeki
  • Semiconductor light emitting device and method of manufacturing the same
    Patent number: 7755094
    Abstract: A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a substrate, a mask seed layer formed on the substrate and comprising a II group element, a nitride layer formed on the mask seed layer and comprising a III group element, a first conductive semiconductor layer on the nitride layer, an active layer on the first conductive layer, and a second conducive semiconductor layer on the active layer.
    Type: Grant
    Filed: June 23, 2008
    Date of Patent: July 13, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventors: Kyung Jun Kim, Hyo Kun Son
  • Light emitting device and method for fabricating the same
    Patent number: 8916883
    Abstract: A light emitting device includes a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; a reflective layer formed under the light emitting structure; and a transparent supporting layer formed between the light emitting structure and the reflective layer, to emit a light generated from the active layer; and a conductive layer formed under the reflective layer, to surround the reflective layer.
    Type: Grant
    Filed: August 23, 2011
    Date of Patent: December 23, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Hwan Hee Jeong, Sang Youl Lee
  • Light emitting device package and lighting system
    Patent number: 8759841
    Abstract: A light emitting device package includes a sub mount; a light emitting device on the sub mount, and configured to generate light of a first wavelength; a dielectric layer disposed on the sub mount; and a fluorescent layer on the dielectric layer, and configured to convert the light of the first wavelength into light of a second wavelength, wherein the dielectric layer includes a plurality of layers having at least two different refractive indices, that transmits the light of the first wavelength and reflects the light of the second wavelength.
    Type: Grant
    Filed: February 3, 2011
    Date of Patent: June 24, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sung Min Hwang, Hyun Don Song, Woon Kyung Choi
  • Semiconductor light emitting device and a method of manufacturing the same
    Patent number: 7902557
    Abstract: Disclosed is a semiconductor light emitting device comprising a seed layer, a first conductive semiconductor layer into which the seed layer is partially inserted, a first electrode electrically connected to the first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, and a second electrode layer under the second conductive semiconductor layer.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: March 8, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Jo Young Lee
  • Light emitting device, light emitting device package and lighting system including the same
    Patent number: 9287460
    Abstract: Embodiments relate to a light emitting device, a light emitting device package, and a lighting system including the same. The light emitting device includes a light emitting structure, a second electrode under the light emitting structure and an insulating layer disposed on the at least one of the protrusions. The second electrode includes a bottom member and at least one of protrusions on the bottom member that penetrates the second conductive type semiconductor layer and the active layer. The at least one of the protrusions includes an upper portion and a lower portion having different size.
    Type: Grant
    Filed: September 9, 2010
    Date of Patent: March 15, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Sung Min Hwang
  • Semiconductor light emitting device and method of fabricating the same
    Patent number: 8994053
    Abstract: Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: March 31, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 8030639
    Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
    Type: Grant
    Filed: December 5, 2005
    Date of Patent: October 4, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM
    Publication number: 20110169043
    Abstract: Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer between the first conductive type semiconductor layer and the second conductive type layer. At least one lateral surface of the light emitting structure layer has cleavage planes of an A-plane and an M-plane.
    Type: Application
    Filed: January 7, 2011
    Publication date: July 14, 2011
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Dae Sung KANG
  • Semiconductor light emitting device
    Patent number: 8129727
    Abstract: A semiconductor light emitting device including a second electrode layer; a light emitting unit including a plurality of compound semiconductor layers under one portion of the second electrode layer; a first insulating layer under the other portion of the second electrode; an electrostatic protection unit including a plurality of compound semiconductor layer under the first insulating layer; a first electrode layer electrically connecting the light emitting unit to the electrostatic protection unit; and a wiring layer electrically connecting the electrostatic protection unit to the second electrode layer.
    Type: Grant
    Filed: July 23, 2009
    Date of Patent: March 6, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong