Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a crystalline substrate having a plurality of side surfaces, a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the substrate, and a first electrode on the first conductive type semiconductor layer and a second electrode on the second conductive type semiconductor layer. An amorphous region is defined in a side surface of the substrate, and the amorphous regions of two sides adjacent to each other have different depths from a top surface of the substrate.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

Abstract: Provided is a method for fabricating a light emitting device. The method for fabricating the light emitting device includes forming a buffer layer including a compound semiconductor in which a rare-earth element is doped on a substrate, forming a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, which are successively stacked on the buffer layer, forming a first electrode layer on the light emitting structure, removing the substrate, and forming a second electrode layer under the light emitting structure.

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a package body having a first cavity and a second cavity; a plurality of reflective frames comprising a first reflective frame and a second reflective frame on the first cavity and the second cavity, respectively, and each of the first reflective frame and the second reflective frame comprises a bottom frame and at least two side wall frames extending from the bottom frame; and a light emitting device on the first reflective frame, wherein the first reflective frame and the second reflective frame are electrically separated from each other.

Abstract: An embodiment provides a lighting source module. The lighting source module includes: a plurality of first light emitting devices having a first light emitting chip and first phosphor and emitting white light having a first color temperature; a plurality of second light emitting devices having a second light emitting chip and second phosphor, and emitting white light having a second color temperature; and a plurality of circuit boards having the first and second light emitting devices thereon, in which columns of the first light emitting devices and columns of the second light emitting devices are alternately disposed on the circuit boards, and column of light emitting devices emitting white light having the same color temperature are disposed at both ends of the circuit boards.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a crystalline substrate having a plurality of side surfaces, a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the substrate, and a first electrode on the first conductive type semiconductor layer and a second electrode on the second conductive type semiconductor layer. An amorphous region is defined in a side surface of the substrate, and the amorphous regions of two sides adjacent to each other have different depths from a top surface of the substrate.

Abstract: A light emitting device including a light emitting structure comprising a plurality of light emitting regions comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode unit disposed on the first semiconductor layer in one of the light emitting regions, a second electrode unit disposed on the second semiconductor layer in another of the light emitting regions, and at least one connection electrode to sequentially connect the light emitting regions in series, wherein the light emitting regions connected in series are divided into 1st to ith light emitting region groups and areas of light emitting regions that belong to different groups are different (where 1<i?j, each of i and j is a natural number, and j is a last light emitting region group).

Abstract: The present invention discloses a light emitting device package, comprising: a metal base; an electrical circuit layer provided at an upper side of the metal base for providing a conductive path; a light emitting device mounted in a second region having a smaller thickness than a first region on the metal base; an insulating layer sandwiched between the meta base and the electrical circuit layer; an electrode layer provided at an upper side of the electrical circuit layer; and a wire for electrically connecting the electrode layer and the light emitting device. Further, there is provided a light emitting device package which is improved in light emission efficiency since the light emitting device is placed on a small thickness portion of the metal base.

Abstract: Provided is a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes a package main body with a cavity, a plurality of light emitting diode chips, a wire, and a plurality of lead frames. The plurality of light emitting diode chips are mounted in the cavity. The wire is connected to an electrode of at least one light emitting diode chip. The plurality of lead frames are formed in the cavity, and at least one lead frame is electrically connected to the light emitting diode chip or a plurality of wires.

Abstract: Disclosed is a semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The semiconductor structure includes a first upper surface on which the first semiconductor layer is exposed, a second upper surface on which the second semiconductor layer is disposed, an inclined surface connecting the first upper surface and the second upper surface, and a recess formed between the first upper surface and the inclined surface. The recess has a depth less than or equal to 30% of a vertical distance between the first upper surface and the second upper surface.

Abstract: The present invention discloses a light emitting package, comprising: a base; a light emitting device on the base; an electrical circuit layer electrically connected to the light emitting device; a gold layer on the electrical circuit layer; a wire electrically connected between the light emitting device and the gold layer; a screen member having an opening and disposed on the base adjacent to the light emitting device; and a lens covering the light emitting device, wherein a cross-sectional shape of the screen member is substantially rectangular, and a width of the cross-sectional shape of the screen member being larger than a height of the cross sectional shape of the screen member, wherein a bottom surface of the screen member is positioned higher than the light emitting device, and wherein an entire uppermost surface of the screen member is in contact with the lens.

Abstract: Disclosed is a light emitting device including, a light emitting structure that has a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein the active layer is provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and includes a plurality of well layers and at least one barrier layer, wherein the barrier layer includes a first nitride layer and a second nitride layer provided on the first nitride layer, and wherein the first nitride layer has a larger energy band gap than the second nitride layer while the energy band gap of the second nitride layer is larger than that of each well layer.

Abstract: A semiconductor light emitting package is discussed, which includes a base having a top surface with a flat portion; a semiconductor light emitting device on the base; an electrical circuit layer electrically connected to the semiconductor light emitting device; a screen member having an opening and disposed on the base around the semiconductor light emitting device, the screen member shaped into a substantially circle; and an optical member formed of a light transmissive material such that light emitted from the semiconductor light emitting device passes therethrough, wherein a bottom surface of the screen member is positioned higher than the semiconductor light emitting device, an edge portion of the optical member is in contact with the screen member, a top surface of the optical member is substantially parallel to the flat portion of the base.

Abstract: An LED package includes a body; a first lead frame having a first cavity in the body; a second lead frame having a second cavity in the body; a first bonding part protruding into a region between a first lateral side of the body and the first cavity from the first lead frame; a second bonding part protruding into a region between a second lateral side of the body, and the second cavity from the second lead frame; a first LED in the first cavity; a second LED in the second cavity; a third lead frame disposed between the first lateral side and the first cavity; a fourth lead frame disposed between the second lateral side and the second cavity; a first protective device on one of the third lead frame and the first bonding part; and a second protective device on one of the fourth lead frame and the second bonding part.

Abstract: A light emitting device includes a substrate, a plurality of light emitting cells disposed on the substrate to be spaced apart from each other, and a connection wire electrically connecting adjacent ones of the light emitting cells. One of the adjacent light emitting cells includes a plurality of first segments, and the other of the adjacent light emitting cells includes a plurality of second segments respectively facing the first segments. A separation distance is provided between first and second segments facing each other, where each of which has an end contacting the connection wire is greater than a separation distance between first and second segments facing each other, and each of which has an end that does not contact the connection wire.

Abstract: Disclosed are a light emitting device. The light emitting device includes first and second light emitting cells on a conductive support member and having a hole. The first and second light emitting cells includes first and second semiconductor layers, and an active layer. First and second conducive layers are between the first light emitting cell and the conductive support member, and a third and fourth conductive layers are between the second light emitting cell and the conductive support member. First insulating layer is between the second and fourth conductive layers and the conductive support member. Second insulating layer is disposed in the hole. The second conductive layer is electrically connected to the first light emitting cells through the hole and the third conductive layer.

Abstract: A semiconductor device comprises a base substrate, a pattern on the base substrate, a buffer layer on the base substrate, and an epitaxial layer on the buffer. The pattern is a self-assembled pattern. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled pattern on the silicon carbide substrate, forming a buffer layer on the silicon carbide substrate, and forming an epitaxial layer on the buffer layer. A semiconductor device comprises a base substrate comprising a pattern groove and an epitaxial layer on the base substrate. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled projection on the silicon carbide substrate, forming a pattern groove in the silicon carbide, and forming an epitaxial layer on the silicon carbide.

Abstract: A light emitting device includes a substrate, a plurality of light emitting cells disposed on the substrate to be spaced apart from each other, and a connection wire electrically connecting adjacent ones of the light emitting cells. One of the adjacent light emitting cells includes a plurality of first segments, and the other of the adjacent light emitting cells includes a plurality of second segments respectively facing the first segments. A separation distance is provided between first and second segments facing each other, where each of which has an end contacting the connection wire is greater than a separation distance between first and second segments facing each other, and each of which has an end that does not contact the connection wire.

Abstract: A light emitting device package of the embodiment includes a body including cavities; first and second lead electrodes disposed in the cavity of the body; a light emitting device disposed in the cavities, electrically connected to at least one of the first and second lead electrodes and emitting a first main peak wavelength in the range of 410˜460 nm; and a first resin layer having first phosphor on the light emitting device, wherein the first phosphor of the first resin layer emits light of a second main peak wavelength in the range of 461 nm˜480 nm by exciting some light having the first main peak wavelength, and the first and second main peak wavelengths have the wavelength different from each other and contain the light having the same color.

Abstract: The present invention discloses a light emitting device package, comprising: a metal base; an electrical circuit layer provided at an upper side of the metal base for providing a conductive path; a light emitting device mounted in a second region having a smaller thickness than a first region on the metal base; an insulating layer sandwiched between the meta base and the electrical circuit layer; an electrode layer provided at an upper side of the electrical circuit layer; and a wire for electrically connecting the electrode layer and the light emitting device. Further, there is provided a light emitting device package which is improved in light emission efficiency since the light emitting device is placed on a small thickness portion of the metal base.