Abstract: Disclosed a nitride semiconductor LED including: a substrate; a GaN-based buffer layer formed on the substrate; AlyGa1-yN/GaN short period superlattice (SPS) layers formed on the GaN-based buffer layer in a sandwich structure of upper and lower parts having an undoped GaN layer or an indium-doped GaN layer interposed therebetween (Here, 0?y?1); a first electrode layer of an n-GaN layer formed on the upper AlyGa1-yN/GaN SPS layer; an active layer formed on the first electrode layer; and a second electrode layer of a p-GaN layer formed on the active layer.

Abstract: Disclosed are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer (130), an AlGaInP-based active layer (140) on the first conductive semiconductor layer (130), a second conductive clad layer (150) on the AlGaInP-based active layer (140), a second conductive GaP layer (162) having first concentration on the second conductive clad layer (150), and a second conductive GaP layer (164) having second concentration higher than the first concentration on the second conductive GaP layer (162) having the first concentration.

Abstract: A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an InxGa1-xN layer formed on the first electrode layer; an active layer formed on the InxGa1-xN layer; a first P—GaN layer formed on the active layer; a second electrode layer formed on the first P—GaN layer; a second P—GaN layer partially protruded on the second electrode layer; and a third electrode formed on the second P—GaN layer.

Abstract: A nitride semiconductor light emitting device is provided. The nitride semiconductor light emitting device includes a first nitride layer comprising at least N-type nitride layer. An insulating member is formed on the first nitride layer having a predetermined pattern. An active layer is formed in both sides of the insulating member on the first nitride layer to emit light. A second nitride layer is formed in both sides of the insulating member on the active layer and the second nitride layer comprises at least a P-type nitride layer.

Abstract: The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit light; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. According to the present invention, the crystallinity of the active layer is enhanced, and optical power and reliability are also enhanced.

Abstract: Provided are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an oxide protrusion disposed on at least a portion of the second conducive semiconductor layer; and a current spreading layer on the second conductive semiconductor layer and the oxide protrusion.

Abstract: A light emitting device including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, an electrode layer on the second conductive type semiconductor layer, a first electrode on the first conductive type semiconductor layer, and a second electrode on the second conductive type semiconductor layer and in an opening, the opening being in the electrode layer, wherein the second electrode has a first portion in the opening and a second portion extending from the first portion and overlapping at least a portion of the first electrode.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device comprises a plurality of compound semiconductor layers, an electrode layer, and a conductive support member. The compound semiconductor layers comprise a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. The electrode layer is disposed under the compound semiconductor layers. The conductive support member is disposed under the electrode layer. Herein, the conductive support member has a thermal expansion coefficient difference within about 50% with respect to the compound semiconductor layer.

Abstract: A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.

Abstract: A light emitting device including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.

Abstract: Provided are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a plurality of compound semiconductor layers, a first electrode, a second electrode layer, and a conductive support member. The plurality of compound semiconductor layers comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The first electrode is formed under the compound semiconductor layer. The second electrode layer is formed on the compound semiconductor layer. The second electrode layer has an unevenness. The conductive support member is formed on the second electrode layer.

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type super lattice layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type super lattice layer comprises a second conductive type nitride layer and an undoped nitride layer on the active layer. The second conductive type semiconductor layer is formed on the second conductive type super lattice layer.

Abstract: Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer between the first conductive type semiconductor layer and the second conductive type layer. At least one lateral surface of the light emitting structure layer has cleavage planes of an A-plane and an M-plane.

Abstract: A nitride semiconductor light emitting device is provided. The nitride semiconductor light emitting device includes a first nitride layer comprising at least N-type nitride layer. An insulating member is formed on the first nitride layer having a predetermined pattern. An active layer is formed in both sides of the insulating member on the first nitride layer to emit light. A second nitride layer is formed in both sides of the insulating member on the active layer and the second nitride layer comprises at least a P-type nitride layer.

Abstract: A light emitting device including a substrate, a first conductive type semiconductor layer on the substrate, at least one InxGa1?xN layer (0<x<0.2) on the first conductive type semiconductor layer, at least one GaN layer directly on the at least one InxGa1?N layer (0<x<0.2), an active layer on the at least one GaN layer, a second conductive type semiconductor layer on the active layer, and a transparent ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer.

Abstract: A nitride semiconductor LED includes a substrate; a GaN-based buffer layer formed on the substrate; AlyGa1?yN/GaN short period superlattice (SPS) layers formed on the GaN-based buffer layer in a sandwich structure of upper and lower parts having an undoped GaN layer or an indium-doped GaN layer interposed therebetween (where 0?y?1); a first electrode layer of an n-GaN layer formed on the upper AlyGa1?yN/GaN SPS layer; an active layer formed on the first electrode layer; and a second electrode layer of a p-GaN layer formed on the active layer.

Abstract: Disclosed are a light emitting device, a method of fabricating a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer (112), an InxGa1-xN layer (where, 0<x?1) (151) on the first conductive semiconductor layer (112), a GaN layer (152) on the InxGa1-xN layer (151), a first Aly1Ga1-y1N layer (where, 0<y1?1) (153) on the GaN layer (152), an active layer (114) on the first Aly1Ga1-y1N layer (153), and a second conductive semiconductor layer (116) on the active layer (114).

Abstract: Disclosed is a method of manufacturing a light emitting device. The light emitting device includes a nitride semiconductor layer, an electrode on the nitride semiconductor layer, a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer under the nitride semiconductor layer, and a conductive layer under the light emitting structure. The nitride semiconductor layer has band gap energy lower than band gap energy of the first conductive type semiconductor layer.

Abstract: Disclosed are a light emitting device, a light emitting device package and a lighting system. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer over the first conductive semiconductor layer, and a second conductive semiconductor layer over the active layer; a dielectric layer over a first region of the first conductive semiconductor layer; a second electrode over the dielectric layer; and a first electrode over a second region of the first conductive semiconductor layer.

Abstract: A semiconductor light emitting device includes a plurality of first conductive type semiconductor layers; a plurality of second conductive type semiconductor layers; an active layer between the first and second conductive type semiconductor layers, wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers; a first electrode connected to the first conductive type semiconductor layers; and a second electrode connected to the second conductive type semiconductor layers, wherein the first conductive type semiconductor layers includes a first and second AlGaN based layers, and the plurality of quantum well layers of the active layer include an InAlGaN layer.