Abstract: A light emitting device is disclosed. The light emitting device includes a first electrode and a second electrode, which have different areas, thereby achieving enhanced bonding reliability.
Abstract: Provided is a package of a light emitting diode. The package according to an embodiment includes a base layer, a light emitting diode chip on the base layer, a lead frame electrically connected to the light emitting diode chip, a reflective coating layer directly on the lead frame, and a molding material covering the light emitting diode chip in a predetermined shape.
Abstract: Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device comprises a substrate comprising a cavity, a multi-color light emitting unit on a first region of the cavity, and a white light emitting unit on a second region of the cavity.
Abstract: Disclosed is a light emitting device including a second conductive semiconductor layer; an active layer on the second conductive semiconductor layer; a first semiconductor layer on the active layer, the first semiconductor layer having at least one lateral side with a step portion; and a lateral electrode on the step portion formed at the at least one lateral side of the first semiconductor layer.
Abstract: A semiconductor light emitting device that includes a first conductive type semiconductor layer, a first electrode, a insulating layer, and an electrode layer. The first electrode has at least one branch on the first conductive type semiconductor layer. The insulating layer is disposed on the first electrode. The electrode layer is disposed on the insulating layer.
Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.
Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a IH-V group compound semiconductor, a reflective layer comprising mediums, which are different from each other and alternately stacked under the light emitting structure, and a second electrode layer under the reflective layer.
Abstract: Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer.
Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first semiconductor layer comprising a plurality of vacant space parts, an active layer on the first semiconductor layer, and a second conductive type semiconductor layer on the active layer. Each of the plurality of air-lenses has a thickness less than that of the first semiconductor layer.
Abstract: A light emitting device package comprises: a substrate; first and second conduction members on the substrate; a light emitting diode on the substrate, the light emitting diode being electrically connected with the first and second conduction members; and a phosphor layer on the light emitting diode.
Abstract: A semiconductor device package is provided. The semiconductor device package comprises a package body; a plurality of electrodes comprising a first electrode on the package body; a paste member on the first electrode and comprising inorganic fillers and metal powder; and a semiconductor device die-bonded on the paste member, wherein a die-bonding region of the first electrode comprises a paste groove having a predetermined depth and the paste member is formed in the paste groove.
Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a body including a cavity and formed in a transmittive material; a plurality of lead electrodes in the cavity; an isolation member disposed between the lead electrodes; a light emitting device electrically connected to the lead electrodes in the cavity; and a molding member on the light emitting device.
Abstract: A lighting emitting device includes a conductive substrate; a first conductive layer formed on the conductive substrate; a second conductive layer formed on the first conductive layer; a second semiconductor layer formed on the second conductive layer; an active layer formed on the second semiconductor layer; a first semiconductor layer being formed on the active layer and including a charge distribution layer; and an insulation layer.
Abstract: Discussed is an LED package The LED package includes a body having a cavity at one side thereof, at least one of lead frames having a bottom frame and a sidewall frame in the cavity, and a light emitting device electrically connected with the lead frames.
Type:
Grant
Filed:
November 16, 2010
Date of Patent:
September 20, 2011
Assignee:
LG Innotek Co., Ltd.
Inventors:
Sung Min Kong, Choong Youl Kim, Hee Seok Choi
Abstract: A light emitting device according to the embodiment includes a reflecting layer; an adhesion layer including an oxide-based material on the reflecting layer; an ohmic contact layer on the adhesion layer; and a light emitting structure layer on the ohmic contact layer.
Abstract: Provided is a light emitting device. The light emitting device comprises a package body, a plurality of electrodes, a light emitting diode, and a lens. The package body comprises a trench. The plurality of electrodes is disposed on and/or in the package body. The light emitting diode is disposed on the package body and is electrically connected to the electrodes. The lens is disposed on an inner side of the trench.
Abstract: A light emitting device package is provided. The light emitting device package may include a housing including a cavity, a light emitting device disposed within the cavity, a filler filled in the cavity in order to seal the light emitting device, a fluorescent layer disposed on the filler, and an optical filter being disposed within the filler and transmitting light with a particular wavelength.
Abstract: A light emitting device package including a package body including a plurality of discrete and separated three-dimensional-shaped indentations formed in an undersurface of the package body and configured to dissipate heat generated in the package body, a cavity in the package body, and a light emitting device including at least one emitting diode in the cavity of the package body and configured to emit light.
Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under the light emitting structure.
Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer.