Search Patents
  • Patent number: 8232577
    Abstract: A light emitting device according to the embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode on the light emitting structure; and a protection layer including a first metallic material on an outer peripheral region of one of the light emitting structure and the first electrode.
    Type: Grant
    Filed: February 16, 2011
    Date of Patent: July 31, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Patent number: 8791486
    Abstract: A light emitting device package is provided. The light emitting device package may include a main body having a cavity including side surfaces and a bottom, and a first reflective cup and a second reflective cup provided in the bottom of the cavity of the main body and separated from each other. A first light emitting device may be provided in the first reflective cup, and a second light emitting device may be provided in the second reflective cup.
    Type: Grant
    Filed: September 6, 2012
    Date of Patent: July 29, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Bong Kul Min
  • Publication number: 20140124825
    Abstract: A light emitting device according to the embodiment includes a conductive support member; a light emitting structure on the conductive support member including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers; and a protective device on the light emitting structure.
    Type: Application
    Filed: January 9, 2014
    Publication date: May 8, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Kwang Ki CHOI, Hwan Hee JEONG, Sang Youl LEE, June O SONG
  • Patent number: 8653545
    Abstract: A semiconductor light emitting device that includes a first conductive type semiconductor layer, a first electrode, a insulating layer, and an electrode layer. The first electrode has at least one branch on the first conductive type semiconductor layer. The insulating layer is disposed on the first electrode. The electrode layer is disposed on the insulating layer.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: February 18, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Woo Sik Lim, Sung Ho Choo
  • Publication number: 20120256225
    Abstract: A semiconductor device package is provided. The semiconductor device package comprises a package body; a plurality of electrodes comprising a first electrode on the package body; a paste member on the first electrode and comprising inorganic fillers and metal powder; and a semiconductor device die-bonded on the paste member, wherein a die-bonding region of the first electrode comprises a paste groove having a predetermined depth and the paste member is formed in the paste groove.
    Type: Application
    Filed: June 15, 2012
    Publication date: October 11, 2012
    Applicant: LG INNOTEK CO., LTD.
    Inventor: CHOONG YOUL KIM
  • Patent number: 8269249
    Abstract: A light emitting device package including a package body including a plurality of discrete and separated three-dimensional-shaped indentations formed in an undersurface of the package body and configured to dissipate heat generated in the package body, a cavity in the package body, and a light emitting device including at least one emitting diode in the cavity of the package body and configured to emit light.
    Type: Grant
    Filed: December 11, 2009
    Date of Patent: September 18, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Seon Song
  • Publication number: 20120001222
    Abstract: A light emitting device including a light emitting structure including a second conductive type semiconductor layer, an active layer, and a first conductive type semiconductor layer, and a first protective layer disposed on a side of the light emitting structure, wherein the first protective layer overlaps with the first conductive type semiconductor layer in a vertical direction.
    Type: Application
    Filed: August 23, 2011
    Publication date: January 5, 2012
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Ji Hyung MOON, Sang Youl LEE, Chung song KIM, Kwang Ki CHOI, June O. SONG
  • Patent number: 8598616
    Abstract: Disclosed are a light emitting device and a light unit using the same. The light emitting device includes a body, a light emitting diode installed in the body, a plurality of lead frames disposed in the body and electrically connected to the light emitting diode; and a heat dissipation member received in the body, thermally connected to the light emitting diode, and having a plurality of heat dissipation fins exposed from a lower surface of the body.
    Type: Grant
    Filed: October 20, 2010
    Date of Patent: December 3, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Gun Kyo Lee
  • Patent number: 8963188
    Abstract: A light emitting diode (LED) package is provided. The LED package includes a printed circuit board (PCB), an electrode pad, an LED, a wire, and first and second moldings. The electrode pad and the LED are formed on the PCB. The wire electrically connects the LED with the electrode pad. The first molding is formed on the LED and the second molding is formed on the first molding.
    Type: Grant
    Filed: October 25, 2006
    Date of Patent: February 24, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Bo Geun Park
  • Patent number: 8115224
    Abstract: A light emitting device That includes a first photonic crystal structure having a reflective layer and non-metal pattern elements on the reflective layer, a second conductive semiconductor layer on both the reflective layer and the non-metal pattern elements, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer.
    Type: Grant
    Filed: October 5, 2009
    Date of Patent: February 14, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sun Kyung Kim
  • Patent number: 8319227
    Abstract: A light emitting device (LED) is provided. The LED comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The active layer is on the first conductivity type semiconductor layer. The second conductivity type semiconductor layer is on at least one side of the active layer and the first conductivity type semiconductor layer, and on the active layer.
    Type: Grant
    Filed: June 22, 2009
    Date of Patent: November 27, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hyun Kyong Cho
  • Patent number: 8415705
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; an electrode layer on the plurality of compound semiconductor layers; and a channel layer including protrusion and formed along a peripheral portion of an upper surface of the plurality of compound semiconductor layers.
    Type: Grant
    Filed: June 15, 2011
    Date of Patent: April 9, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Publication number: 20140361326
    Abstract: A light emitting device includes a light emitting structure provided over a first substrate and including at least a first conductive semiconductor layer; an active layer and a second conductive semiconductor layer. A first electrode is provided over the first conductive semiconductor layer; and a second electrode is provided over the second conductive semiconductor layer. A MIM (metal-insulator-metal) structure is provided over at least one of the first and second electrodes.
    Type: Application
    Filed: June 9, 2014
    Publication date: December 11, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Hyun Don SONG
  • Patent number: 8519417
    Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a plurality of compound semiconductor layers that includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer. An electrode is formed on the compound semiconductor layers. A groove is formed at an upper portion of the compound semiconductor layers. An electrode layer is formed under the compound semiconductor layers.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: August 27, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Patent number: 8022415
    Abstract: Discussed is an LED package The LED package includes a body having a cavity at one side thereof, at least one of lead frames having a bottom frame and a sidewall frame in the cavity, and a light emitting device electrically connected with the lead frames.
    Type: Grant
    Filed: November 16, 2010
    Date of Patent: September 20, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sung Min Kong, Choong Youl Kim, Hee Seok Choi
  • Patent number: 9425356
    Abstract: A light emitting device includes a light emitting structure having a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a first electrode disposed on the light emitting structure, configured as a plurality of dots and electrically connected to the first conductive semiconductor layer; an electrode pad electrically connected to the first electrode; and a second electrode electrically connected to the second conductive semiconductor layer.
    Type: Grant
    Filed: February 25, 2015
    Date of Patent: August 23, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Bum Doo Park
  • Patent number: 8692278
    Abstract: Disclosed are a light emitting device, a light emitting device package, a lighting system and a manufacturing method of light emitting device. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; a first ohmic layer over the light emitting structure; and a second ohmic layer including a pattern over the first ohmic layer.
    Type: Grant
    Filed: December 7, 2010
    Date of Patent: April 8, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hyun Don Song
  • Publication number: 20120049229
    Abstract: Disclosed is a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed on between the first and second semiconductor layers, a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer. The first semiconductor layer is formed, at an edge portion thereof, with a hole, in which a portion of the first electrode is arranged.
    Type: Application
    Filed: October 11, 2011
    Publication date: March 1, 2012
    Applicant: LG INNOTEK CO., LTD.
    Inventors: WooSik LIM, SungKyoon KIM, MinGyu NA, SungHo CHOO, MyeongSoo KIM, HeeYoung BEOM
  • Patent number: 8519418
    Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a sub-mount including a cavity, a light emitting device chip provided in the cavity, an electrode electrically connected to the light emitting chip, a reflective layer formed on a surface of the cavity, a dielectric pattern on the reflective layer, and an encapsulant filled in the cavity.
    Type: Grant
    Filed: February 3, 2011
    Date of Patent: August 27, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sun Kyung Kim
  • Patent number: 7989832
    Abstract: Disclosed are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor, a second conductive semiconductor layer on the active layer, and a dot-shaped roughness layer on the second conductive semiconductor layer.
    Type: Grant
    Filed: September 17, 2007
    Date of Patent: August 2, 2011
    Assignee: LG Innotek Co., Ltd
    Inventor: Kyong Jun Kim