Abstract: A light emitting device may be provided that includes a conductive support member, a first conductive layer, a second conductive layer, an insulation layer between the first conductive layer and the second conductive layer, and a light emitting structure that includes a second semiconductor layer on the second conductive layer, a first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer. The first conductive layer may include at least one conductive via that passes through the second conductive layer, the second semiconductor layer and the active layer. A top surface of the at least one conductive via is provided into the first semiconductor layer. The insulation layer may substantially surround a side wall of the conductive via.

Abstract: Provided is a light emitting device package. It is a substrate comprising a top and a bottom surfaces being substantially parallel to each other; a light emitting diode chip on the substrate; a frame disposed around the light emitting diode chip and configured to reflect light emitted from the light emitting diode chip, the frame having an opening; a first metal layer disposed on the top surface of the substrate; a second metal layer disposed on the top surface of the substrate; a third metal layer disposed on the bottom surface of the substrate; a through hole connected between the first metal layer and the third metal layer; a material being filled in the opening of the frame; and a lens disposed on the material, wherein the substrate and the frame are separate from each other.

Abstract: Provided are an optical device package and a method of manufacturing the same. The method of manufacturing the optical device package according to an exemplary embodiment of the present invention comprises: forming an adhesive layer showing predetermined reflectance or more on an insulating layer; forming a metal layer on the adhesive layer; forming a circuit pattern layer by etching the metal layer; and mounting an optical device on the circuit pattern layer. According to the present invention, the adhesive layer showing the predetermined reflectance or more rather than a transparent adhesive layer is formed, whereby thanks to the adhesive layer exposed by the etched part of the circuit pattern layer, the light can be prevented from being trapped. Thus, it is advantageous that luminous intensity of the optical device package increases.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure, a non-periodic light extraction pattern, and a phosphor layer. The light emitting structure includes a first conductive type semiconductor layer, a second conductive type semiconductor layer over the first conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The non-periodic light extraction pattern is disposed over the light emitting structure. The phosphor layer is disposed over the non-periodic light extraction pattern. The phosphor layer fills at least one portion of the non-periodic light extraction pattern.

Abstract: Provided is a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes a package main body with a cavity, a plurality of light emitting diode chips, a wire, and a plurality of lead frames. The plurality of light emitting diode chips are mounted in the cavity. The wire is connected to an electrode of at least one light emitting diode chip. The plurality of lead frames are formed in the cavity, and at least one lead frame is electrically connected to the light emitting diode chip or a plurality of wires.

Abstract: A light emitting device and a light unit including the same are provided. The light emitting device includes a body, a first cavity disposed at a center of the body, the first cavity having an open upper side, a second cavity disposed around an upper portion of the body, the second cavity being spaced from the first cavity, first and second lead electrodes disposed within the first cavity, a light emitting chip disposed on at least one of the first and second lead electrodes, and a first molding member in the first cavity. The second cavity has an upper width greater than a lower width thereof and a side surface of the second cavity is formed of a vertical side surface with respect to a top surface of the body.

Abstract: A light emitting device includes a body having a first recess; a barrier section having a second recess and a third recess, protruding upward over a bottom surface of the first recess, and dividing the bottom surface of the first recess into a first region and a second region; a first light emitting diode disposed in the first region; a second light emitting diode disposed in the second region; a first lead electrode disposed in the first region; a second lead electrode disposed in the second region; a first wire electrically connecting the first lead electrode to the second light emitting diode through the second recess; and a second wire electrically connecting the second lead electrode to the first light emitting diode through the third recess.

Abstract: Provided are a light emitting device, a method for fabricating the light emitting device, and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer, a conductive support member, and a protection member on the light emitting structure. The light emitting structure has a first width and a second width. A difference between the first width and the second width defines a stepped structure or an inclined structure. The protection member is disposed on the stepped or the inclined structure defined by the difference between the first and second widths of the light emitting structure.

Abstract: A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode on a part of the first semiconductor layer, an electrode layer on the second conductive semiconductor layer, an insulating layer on the electrode layer, a second electrode on the electrode layer, a support member on the insulating layer, a first connection electrode connected to the first electrode, and a second connection electrode connected to the second electrode. The insulating layer is disposed on a side surface of the light emitting structure and the part of the first semiconductor layer. The insulating layer includes a first layer and a second layer having a different material from the first layer. The first layer of the insulating layer has a refractive index different from the second layer of the insulating layer.

Abstract: Provided are a light emitting device package and a method for fabricating the same. The light emitting device package comprises a substrate; a light emitting device on the substrate; a zener diode comprising a first conductive type impurity region and two second conductive type impurity regions, the first conductive type impurity region being disposed in the substrate, the two second conductive type impurity regions being separately disposed in two areas of the first conductive type impurity region; and a first electrode layer and a second electrode layer, each of them being electrically connected to the second conductive type impurity regions and the light emitting device.

Abstract: Disclosed is a light emitting apparatus. The light emitting apparatus includes a package body; first and second electrodes; a light emitting device electrically connected to the first and second electrodes and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; and a lens supported on the package body and at least a part of the lens including a reflective structure. The package body includes a first cavity, one ends of the first and second electrodes are exposed in the first cavity and other ends of the first and second electrodes are exposed at lateral sides of the package body, and a second cavity is formed at a predetermined portion of the first electrode exposed in the first cavity.

Abstract: Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting unit. The light emitting device includes a conductive support substrate, a protection layer on the conductive support substrate, the protection layer having an inclined top surface, a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the conductive support substrate and the protection layer, and an electrode on the light emitting structure layer. A portion of the protection layer is disposed between the conductive support substrate and the light emitting structure layer.

Abstract: Provided are a light emitting device package and a method for fabricating the same. The light emitting device package comprises a substrate; a light emitting device on the substrate; a zener diode comprising a first conductive type impurity region and two second conductive type impurity regions, the first conductive type impurity region being disposed in the substrate, the two second conductive type impurity regions being separately disposed in two areas of the first conductive type impurity region; and a first electrode layer and a second electrode layer, each of them being electrically connected to the second conductive type impurity regions and the light emitting device.

Abstract: Embodiments provide a light emitting device package including a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes connected to the first and second conductive semiconductor layers, a first pad connected to the first electrodes in first-first through-holes penetrating the second conductive semiconductor layer and the active layer, and a first insulation layer disposed between the first pad and the second conductive semiconductor layer and between the first pad and the active layer to cover the first electrodes in a first-second through-hole, and a second pad connected to the second electrode through a second through-hole penetrating the first insulation layer and electrically spaced apart from the first pad.

Abstract: Embodiments of a light-emitting element and a light-emitting element array comprise: a light-emitting structure which includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; first and second electrodes which are disposed respectively on the first and second conductive type semiconductor layers; and an insulation layer which is disposed on the light-emitting structure exposed between the first electrode and the second electrode, wherein the second electrode comprises a light-emitting element including: a first part which overlaps with the second conductive type semiconductor layer in the thickness direction of the light-emitting structure; and a second part which extends from the first part and does not overlap with the second conductive type semiconductor layer in the thickness direction, thereby being capable of improving the productivity of a light-emitting element manufacturing process while minimizing the light leakage phenomenon between the

Abstract: A light emitting diode package including a package body with a cavity, a plurality of light emitting diode (LED) chips in the cavity, a plurality of wires connected to the plurality of LED chips, and a plurality of lead frames in the package body, wherein the lead frames comprise a first lead frame electrically connected to a first electrode of a first LED chip, a second lead frame electrically connected to a second electrode of the first LED chip and a second electrode of a second LED chip, a third lead frame electrically connected to a first electrode of the second LED chip, and fourth lead frame electrically connected to a second electrode of a third LED chip. Further, ends of the lead frames are exposed outside of the package body and penetrate the package body, and the first electrodes are P electrodes and the second electrodes are N electrodes.

Abstract: A light emitting device includes a body having a recess; a barrier section protruding upward over a bottom surface of the recess and dividing the bottom surface of the recess into a plurality of regions; a plurality of light emitting diodes including a first diode disposed in a first region of the bottom surface of the recess and a second diode disposed in a second region of the bottom surface of the recess; a plurality of lead electrodes spaced apart from each other in the recess and selectively connected to the light emitting diodes; wires connecting the lead electrodes to the light emitting diodes; a resin layer in the recess; and at least one concave part in the barrier section. The concave part has a height lower than a top surface of the barrier section and higher than the bottom surface of the recess and the wires are provided in the concave part to connect the lead electrodes to the light emitting diodes disposed in opposition to each other.

Abstract: A light emitting device includes a substrate, at least one electrode, a first contact layer, a second contact layer, a light emitting structure layer, and an electrode layer. The electrode is disposed through the substrate. The first contact layer is disposed on a top surface of the substrate and electrically connected to the electrode. The second contact layer is disposed on a bottom surface of the substrate and electrically connected to the electrode. The light emitting structure layer is disposed above the substrate at a distance from the substrate and electrically connected to the first contact layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The electrode layer is disposed on the light emitting structure layer.

Abstract: Disclosed are a light emitting module and a light emitting device. The disclosed light emitting module includes a plurality of light emitting devices and a wire connecting the light emitting devices with each other and having at least a first end portion coupled with each light emitting device. The wire has a length longer than a distance between the light emitting devices, and is located higher than bottom surfaces of the light emitting devices. Each light emitting device includes a body including an insulating material, a first lead frame making contact with the body and having a first coupling part, a second lead frame making contact with the body and having a second coupling part, and a light emitting chip on at least one of the first and second lead frames. The first and second coupling parts are located higher than the bottom surfaces of the light emitting devices, and the wire is coupled with the first and second coupling parts of the light emitting devices.

Abstract: An embodiment comprises: a substrate having a chip mounting region; first and second wiring layers disposed on the substrate around the chip mounting region so as to be spaced apart from each other; and a plurality of light emitting chips disposed on the chip mounting region, wherein the first wiring layer comprises a first wiring pattern disposed at one side of a reference line and having a first concave part, and a first extending pattern extending from the first wiring pattern to the other side of the reference line, the second wiring layer comprises a second wiring pattern disposed at the other side of the reference line and having a second concave part, and a second extending pattern extending from the second wiring pattern to one side of the reference line, and the reference line is a straight line passing through the center of the chip mounting region.