Search Patents
  • Light emitting device having vertical structure and method for manufacturing the same
    Publication number: 20070252165
    Abstract: A light emitting device having a vertical structure, which includes a semiconductor layer having a first surface and a second surface, a first electrode arranged on the first surface of the semiconductor layer, a transparent conductive oxide (TCO) layer arranged on the second surface of the semiconductor layer and a second electrode arranged on the TCO layer.
    Type: Application
    Filed: February 16, 2007
    Publication date: November 1, 2007
    Applicants: LG Electronics Inc., LG INNOTEK CO., LTD.
    Inventors: Jun Jang, Jun Ha
  • Light emitting device having vertical structure and package thereof
    Patent number: 9312459
    Abstract: A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.
    Type: Grant
    Filed: April 8, 2014
    Date of Patent: April 12, 2016
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jun Ho Jang, Geun Ho Kim
  • Light emitting device having vertical structure and package thereof
    Patent number: 8729595
    Abstract: A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.
    Type: Grant
    Filed: September 4, 2013
    Date of Patent: May 20, 2014
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jun Ho Jang, Geun Ho Kim
  • Light emitting device package and method of manufacturing the same
    Publication number: 20070200131
    Abstract: A light emitting device package and a method of manufacturing the same are disclosed. The light emitting device package includes a package structure, two diffusion layers formed on the package structure such that the two diffusion layers are electrically separated from each other, and first and second electrodes insulated from the package structure by an insulation film. The first and second electrodes are electrically connected with the two diffusion layers, respectively.
    Type: Application
    Filed: February 16, 2007
    Publication date: August 30, 2007
    Applicants: LG Electronics Inc., LG INNOTEK CO., LTD.
    Inventor: Geun Kim
  • Nitride-based light emitting device
    Patent number: 8450719
    Abstract: A nitride-based light emitting device capable of achieving an enhancement in light emission efficiency and an enhancement in reliability is disclosed. The nitride-based light emitting device includes a light emitting layer including a quantum well layer and a quantum barrier layer, and a stress accommodating layer arranged on at least one surface of the quantum well layer of the light emitting layer.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: May 28, 2013
    Assignees: LG Innotek, Co. Ltd., LG Electronics, Inc.
    Inventor: Yong Tae Moon
  • Light emitting device package and method for manufacturing the same
    Patent number: 7683539
    Abstract: The present invention relates to a light emitting device package and a method for manufacturing the same. The present invention has advantages in that a light emitting device is electrically connected to other devices without use of wire bonding, thereby saving a space for wire bonding and reducing the size of a package.
    Type: Grant
    Filed: May 16, 2006
    Date of Patent: March 23, 2010
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Geun ho Kim, Seung yeob Lee
  • Light emitting diode
    Patent number: 8008646
    Abstract: A light emitting diode is disclosed, wherein the light extraction efficiency of a device can be enhanced by forming patterns on a substrate, a light emitting structure is formed on the substrate formed with the patterns, the substrate is removed from the light emitting structure, and patterns corresponding to those formed on the substrate are formed on the light emitting structure.
    Type: Grant
    Filed: May 18, 2007
    Date of Patent: August 30, 2011
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventor: See jong Leem
  • Light emitting device having vertical structure and package thereof
    Patent number: 9679973
    Abstract: A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.
    Type: Grant
    Filed: March 3, 2016
    Date of Patent: June 13, 2017
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jun Ho Jang, Geun Ho Kim
  • Rod type light emitting device and method for fabricating the same
    Patent number: 8653538
    Abstract: Disclosed herein is a rod type light emitting device and method for fabricating the same, wherein a plurality of rod structures is sequentially formed with a semiconductor layer doped with a first polarity dopant, an active layer, and a semiconductor layer doped with a second polarity dopant.
    Type: Grant
    Filed: April 15, 2011
    Date of Patent: February 18, 2014
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jun Seok Ha, Jong Wook Kim
  • LIGHT EMITTING DEVICE HAVING LIGHT EXTRACTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20140124814
    Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
    Type: Application
    Filed: January 9, 2014
    Publication date: May 8, 2014
    Applicants: LG ELECTRONICS INC., LG INNOTEK CO., LTD.
    Inventors: Hyun Kyong CHO, Sun Kyung KIM, Jun Ho JANG
  • Light emitting unit and liquid crystal display device using the same
    Publication number: 20090065797
    Abstract: A light emitting unit capable of widely adjusting brightness or size, and a liquid crystal display device using the same are disclosed. The light emitting unit includes a circuit board including circuit lines having a plurality of connecting members, and a plurality of unit module connected to the connecting members of the circuit board. The unit module is coupled with at least one light emitting device.
    Type: Application
    Filed: August 28, 2008
    Publication date: March 12, 2009
    Applicants: LG ELECTRONICS INC., LG Innotek Co., Ltd.
    Inventors: Yong Suk Kim, Hoon Hur
  • Light emitting device having light extraction structure and method for manufacturing the same
    Patent number: 9246054
    Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
    Type: Grant
    Filed: January 9, 2014
    Date of Patent: January 26, 2016
    Assignees: LG INNOTEK CO., LTD., LG ELECTRONICS INC.
    Inventors: Hyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
  • Light emitting device having light extraction structure and method for manufacturing the same
    Patent number: 8008103
    Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
    Type: Grant
    Filed: December 14, 2009
    Date of Patent: August 30, 2011
    Assignees: LG Innotek Co., Ltd., LG Electronics Inc.
    Inventors: Hyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
  • Light emitting device package and method for manufacturing the same
    Patent number: 9166123
    Abstract: A light emitting device package capable of emitting uniform white light and a method for manufacturing the same are disclosed. The light emitting device package includes a package body, an electrode formed on at least one surface of the package body, a light emitting device mounted on the package body, and a phosphor layer enclosing the light emitting device while having a uniform thickness around the light emitting device.
    Type: Grant
    Filed: April 7, 2010
    Date of Patent: October 20, 2015
    Assignees: LG ELECTRONICS INC., LG INNOTEK CO., LTD.
    Inventors: Geun ho Kim, Yu Ho Won, Chil Keun Park, Ki Chang Song
  • LIGHT EMITTING DEVICE HAVING VERTICAL TOPOLOGY AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20080135856
    Abstract: A light emitting device having a vertical topology, which is capable of achieving an enhancement in light emission efficiency and reliability, and a method for manufacturing the same are disclosed. The light emitting device includes a first-conductivity-type semiconductor layer, a light emitting layer arranged over the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer arranged on the light emitting layer. The second-conductivity-type semiconductor layer includes an etch barrier layer.
    Type: Application
    Filed: November 2, 2007
    Publication date: June 12, 2008
    Applicants: LG Electronics Inc., LG INNOTEK CO., LTD.
    Inventor: Yong Tae Moon
  • Light emitting device having light extraction structure
    Patent number: 8003993
    Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
    Type: Grant
    Filed: December 14, 2009
    Date of Patent: August 23, 2011
    Assignees: LG Innotek Co., Ltd., LG Electronics Inc.
    Inventors: Hyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
  • Light emitting device and method for fabricating the same
    Publication number: 20070126013
    Abstract: A light emitting device and a method for fabricating the same are disclosed, whereby a thin mask film is changed to agglomerates by a simple thermal treatment process, and a plurality of nano openings, each opening spaced a distance apart, are formed in the agglomerates, a light emitting structure exposed to the nano openings is etched to form nano grooves and nano openings therein, enabling to enhance a light emitting area and to reduce the totally reflected light for an improvement of the light extraction efficiency.
    Type: Application
    Filed: September 26, 2006
    Publication date: June 7, 2007
    Applicants: LG ELECTRONICS INC., LG INNOTEK CO., LTD.
    Inventors: Jong Kim, Hyun Cho
  • Light emitting device having vertical structure and mehod for manufacturing the same
    Publication number: 20070221907
    Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed.
    Type: Application
    Filed: February 9, 2007
    Publication date: September 27, 2007
    Applicants: LG ELECTRONICS INC., LG INNOTEK CO., LTD.
    Inventors: Jun Ho Jang, Yong Tae Moon
  • Light emitting device having light extraction structure and method for manufacturing the same
    Patent number: 7893451
    Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
    Type: Grant
    Filed: December 14, 2009
    Date of Patent: February 22, 2011
    Assignees: LG Innotek Co., Ltd., LG Electronics Inc.
    Inventors: Hyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
  • Light emitting device having nano structures for light extraction
    Patent number: 7893448
    Abstract: The present invention relates to a light emitting device having nano structures for light extraction and a method for manufacturing the same, nano structures comprising nano rods, nano agglomerations, nano recesses, nano patterns with nano line widths, nano through-holes or a combination thereof, formed on a light emitting surface of a light emitting device, thereby enhancing the light extraction efficiency of the device.
    Type: Grant
    Filed: May 22, 2006
    Date of Patent: February 22, 2011
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventor: Jong wook Kim
Narrow Results

Filter by US Classification