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  • Light emitting device having light extraction structure and method for manufacturing the same
    Patent number: 8283690
    Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: October 9, 2012
    Assignees: LG Innotek Co., Ltd., LG Electronics Inc.
    Inventors: Hyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
  • LIGHTING DEVICE, BACKLIGHT UNIT, AND PRINTED CIRCUIT BOARD THEREOF
    Publication number: 20080211987
    Abstract: A backlight unit including a circuit board mounted with light emitting diodes and formed with connecting pads electrically connected with the light emitting diodes, a driver installed on one surface of the circuit board and configured to drive the light emitting diodes, a connector coupled to the connecting pads of the circuit board, in which the connector has a connecting direction changed toward the driver, and a connecting line for connecting the connector to the driver.
    Type: Application
    Filed: September 26, 2007
    Publication date: September 4, 2008
    Applicants: LG ELECTRONICS, INC., LG INNOTEK CO., LTD
    Inventors: Yong Suk KIM, Hoon Hurh, Geun Ho Kim
  • Light emitting device package and backlight unit using the same
    Patent number: 8911160
    Abstract: An light emitting device package and a backlight unit using the same are disclosed, wherein light advancing upward from the light emitting device package can be refracted by a lens to enable the light having a uniform intensity to be emitted upwards to the advantage of efficiency and power consumption, even with a small number of light emitting devices.
    Type: Grant
    Filed: September 26, 2006
    Date of Patent: December 16, 2014
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jung Hoon Seo, Jun Ho Jang
  • Light emitting device package and method for manufacturing the same
    Publication number: 20080035942
    Abstract: A light emitting device package capable of emitting uniform white light and a method for manufacturing the same are disclosed. The light emitting device package includes a package body, an electrode formed on at least one surface of the package body, a light emitting device mounted on the package body, and a phosphor layer enclosing the light emitting device while having a uniform thickness around the light emitting device.
    Type: Application
    Filed: August 7, 2007
    Publication date: February 14, 2008
    Applicants: LG ELECTRONICS INC., LG INNOTEK CO., LTD
    Inventors: Geun Kim, Yu Ho Won, Chil Keun Park, Ki Chang Song
  • Light emitting device and method for fabricating the same
    Patent number: 7511308
    Abstract: A light emitting device and a method for fabricating the same are disclosed, whereby a thin mask film is changed to agglomerates by a simple thermal treatment process, and a plurality of nano openings, each opening spaced a distance apart, are formed in the agglomerates, a light emitting structure exposed to the nano openings is etched to form nano grooves and nano openings therein, enabling to enhance a light emitting area and to reduce the totally reflected light for an improvement of the light extraction efficiency.
    Type: Grant
    Filed: September 26, 2006
    Date of Patent: March 31, 2009
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jong Wook Kim, Hyun Kyong Cho
  • Light emitting device having light extraction structure and method for manufacturing the same
    Patent number: 7939840
    Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
    Type: Grant
    Filed: December 14, 2009
    Date of Patent: May 10, 2011
    Assignees: LG Innotek Co., Ltd., LG Electronics Inc.
    Inventors: Hyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
  • LED having vertical structure and method for fabricating the same
    Publication number: 20070164298
    Abstract: A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layer and provided with an outer surface having a tilt angel of a designated degree; and a second electrode formed on the conductive semiconductor layer.
    Type: Application
    Filed: December 15, 2006
    Publication date: July 19, 2007
    Applicants: LG ELECTRONICS INC., LG INNOTEK CO., LTD.
    Inventors: Jong Wook Kim, Jae Wan Choi, Hyun Kyong Cho, Jong Ho Na, Jun Jang
  • Light emitting device and method of manufacturing the same
    Publication number: 20070200122
    Abstract: A light emitting device having improved light extraction efficiency is disclosed. The light emitting device includes a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one groove formed through a portion of the first semiconductor layer, the active layer, and the second semiconductor layer.
    Type: Application
    Filed: February 22, 2007
    Publication date: August 30, 2007
    Applicants: LG Electronics Inc., LG INNOTEK CO., LTD.
    Inventors: Jong Kim, Hyun Cho, Jun Jang
  • Lead frame and light emitting device package using the same
    Publication number: 20070210325
    Abstract: A lead frame and a light emitting device package using the same are disclosed. More particularly, a lead frame and a light emitting device package using the lead frame which can be easily manufactured and employ a multi-chip structure. The light emitting device package includes a first frame including a heat sink, a second frame coupled to an upper side of the first frame, the second frame including at least one pair of leads and a mount formed with a hole, and a molded structure for coupling the first and second frames to each other.
    Type: Application
    Filed: February 2, 2007
    Publication date: September 13, 2007
    Applicants: LG Electronics Inc., LG INNOTEK CO., LTD.
    Inventors: Kwang Park, Yu Won
  • Rare earth magnet and motor including the same
    Patent number: 10586636
    Abstract: A rare earth magnet and a motor including the same are provided. The rare earth magnet is based on an R—Fe—B alloy (R represents at least one rare-earth element comprising Y), wherein a plating layer of the element Co is formed on a surface of the rare earth magnet by an electroplating method.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: March 10, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jong Soo Han, Seok Bae, Hee Jung Lee, Jai Hoon Yeom, Sang Won Lee
  • Vertical light emitting device having a photonic crystal structure
    Patent number: 7687811
    Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed.
    Type: Grant
    Filed: February 9, 2007
    Date of Patent: March 30, 2010
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jun Ho Jang, Yong Tae Moon
  • Light emitting device package and method of manufacturing the same
    Patent number: 7738764
    Abstract: A light emitting device package and a method of manufacturing the same are disclosed. The light emitting device package includes a package structure, two diffusion layers formed on the package structure such that the two diffusion layers are electrically separated from each other, and first and second electrodes insulated from the package structure by an insulation film. The first and second electrodes are electrically connected with the two diffusion layers, respectively.
    Type: Grant
    Filed: February 16, 2007
    Date of Patent: June 15, 2010
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventor: Geun Ho Kim
  • Rod type light emitting device
    Patent number: 7947989
    Abstract: A rod type light emitting device and a method for fabricating the same are disclosed, wherein rods are formed of a material capable of emitting light on a first polarity layer, and a second polarity layer is formed to wrap around each of the rods, such that a light emitting area increases and the amount of light emitted to the outside without being confined within a device also increases, thereby improving the light output of the device. Further, an active layer is formed of a nano rod structure to enhance light extraction efficiency.
    Type: Grant
    Filed: May 19, 2006
    Date of Patent: May 24, 2011
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jun seok Ha, Jong wook Kim
  • Vertical structure LED and fabricating method thereof
    Patent number: 7528416
    Abstract: A vertical structure light emitting diode (LED) and a fabricating method thereof is disclosed, wherein a metal support layer is formed on an upper surface of a light emitting structure by way of electrolytic plating method in which no high temperature process is required to obviate occurrence of defects on the devices, and the metal support layer containing a soft metal and a hard metal is formed on the light emitting structure to prevent occurrence of warping of a wafer to increase the mechanical strength and to improve reliability.
    Type: Grant
    Filed: June 29, 2006
    Date of Patent: May 5, 2009
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Sunjung Kim, Hyunjae Lee, Geunho Kim
  • Light emitting device having light extraction structure and method for manufacturing the same
    Patent number: 7652295
    Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
    Type: Grant
    Filed: May 7, 2007
    Date of Patent: January 26, 2010
    Assignees: LG Innotek Co., Ltd., LG Electronics Inc.
    Inventors: Hyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
  • LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140117378
    Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.
    Type: Application
    Filed: January 6, 2014
    Publication date: May 1, 2014
    Applicants: LG Innotek Co., Ltd., LG Electronics Inc.
    Inventors: Jong Wook KIM, Hyun Kyong CHO, Gyu Chul YI, Sung Jin AN, Jin Kyoung YOO, Young Joon HONG
  • SOFT-MAGNETIC ALLOY
    Publication number: 20180371589
    Abstract: A soft-magnetic alloy according to an embodiment of the present invention has the composition of the chemical formula below. Febal.SiaAlbXcCrd??[Chemical Formula] where X includes cobalt (Co) and/or Nickel (Ni), a is 0.25-8 wt %, b is 0.25-8 wt %, c is 0.5-10 wt % and d is 3.5-10 wt %.
    Type: Application
    Filed: November 7, 2016
    Publication date: December 27, 2018
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Hyo Yun JUNG, Ji Yeon SONG, Sang Won LEE, So Yeon KIM, Seok BAE, Jai Hoon YEOM, Jong Soo HAN
  • Method for fabricating substrate with nano structures, light emitting device and manufacturing method thereof
    Publication number: 20070166862
    Abstract: A method of fabricating a substrate with nano structures, light emitting device using the substrate and a manufacturing method thereof, wherein a substrate for growing a light emitting device is formed with nano agglomerations, and the substrate is etched by using the agglomerations as a mask to allow nano structures to be formed on the substrate, thereby enabling to grow a crystal defect-reduced, reliability-improved, good quality light emitting structure, and wherein the light emitting structure is formed with nano structures to enhance the light extraction efficiency.
    Type: Application
    Filed: December 14, 2006
    Publication date: July 19, 2007
    Applicants: LG ELECTRONICS INC., LG INNOTEK CO., LTD.
    Inventors: Jong Kim, Hyun Cho
  • Light emitting device having vertical structure and method for manufacturing the same
    Publication number: 20080142809
    Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of damping impact generated during a substrate separation process and achieving an improvement in mass productivity, are disclosed. The light emitting device includes a semiconductor layer having a multilayer structure, a first electrode arranged at one surface of the semiconductor layer, a metal support arranged on the first electrode, and an impact damping layer arranged between the first electrode and the metal support, and made of a metal having a ductility higher than a ductility of a metal for the metal support.
    Type: Application
    Filed: February 6, 2007
    Publication date: June 19, 2008
    Applicants: LG ELECTRONICS INC., LG INNOTEK CO., LTD
    Inventors: Jun Ho Jang, Hyun Jae Lee
  • Post structure, semiconductor device and light emitting device using the structure, and method for forming the same
    Publication number: 20070224831
    Abstract: A nanometer-scale post structure and a method for forming the same are disclosed. More particularly, a post structure, a light emitting device using the structure, and a method for forming the same, which is capable of forming a nanometer-scale post structure having a repetitive pattern by using an etching process, are disclosed. The method includes forming unit patterns on a substrate by use of a first material, growing a wet-etchable second material on the substrate formed with the unit patterns, and wet etching the substrate having the grown second material.
    Type: Application
    Filed: February 22, 2007
    Publication date: September 27, 2007
    Applicants: LG Electronics Inc., LG INNOTEK CO., LTD.
    Inventor: Duk Kyu Bae
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