Search Patents
  • LIGHT EMITTING DEVICE HAVING LIGHT EXTRACTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20160111598
    Abstract: A light emitting device including a support layer; a reflective electrode disposed on the support layer; an ohmic electrode disposed on the reflective electrode, the ohmic electrode including a transparent electrode; and a semiconductor structure disposed on the ohmic electrode, the semiconductor structure including a p-type semiconductor layer disposed on the ohmic electrode; a light emitting layer disposed on the p-type semiconductor layer; and an n-type semiconductor layer disposed on the light emitting layer. Further, the transparent electrode has a thickness in the range of 40 nm to 90 nm.
    Type: Application
    Filed: December 18, 2015
    Publication date: April 21, 2016
    Applicants: LG INNOTEK CO., LTD., LG ELECTRONICS INC.
    Inventors: Hyun Kyong CHO, Sun Kyung KIM, Jun Ho JANG
  • Light emitting device having light extraction structure
    Patent number: 9178112
    Abstract: A light emitting device having a light extraction structure, which is capable of achieving an enhancement in light extraction efficiency and reliability, and a method for manufacturing the same. The light emitting device includes a semiconductor layer having a multi-layered structure including a light emission layer; and a light extraction structure formed on the semiconductor layer in a pattern having unit structures. Further, the wall of each of the unit structures is sloped at an angle of ?45° to +45° from a virtual vertical line being parallel to a main light emitting direction of the light emitting device.
    Type: Grant
    Filed: August 2, 2011
    Date of Patent: November 3, 2015
    Assignees: LG ELECTRONICS INC., LG INNOTEK CO., LTD.
    Inventor: Sun Kyung Kim
  • Method for fabricating substrate with nano structures, light emitting device and manufacturing method thereof
    Patent number: 8796698
    Abstract: A method of fabricating a substrate with nano structures, light emitting device using the substrate and a manufacturing method thereof, wherein a substrate for growing a light emitting device is formed with nano agglomerations, and the substrate is etched by using the agglomerations as a mask to allow nano structures to be formed on the substrate, thereby enabling to grow a crystal defect-reduced, reliability-improved, good quality light emitting structure, and wherein the light emitting structure is formed with nano structures to enhance the light extraction efficiency.
    Type: Grant
    Filed: December 14, 2006
    Date of Patent: August 5, 2014
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jong Wook Kim, Hyun Kyong Cho
  • Light emitting device having vertical structure and method for manufacturing the same
    Patent number: 8368087
    Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: February 5, 2013
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jun Ho Jang, Yong Tae Moon
  • Light emitting device and method of manufacturing the same
    Patent number: 8598607
    Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: December 3, 2013
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jong Wook Kim, Hyun Kyong Cho, Gyu Chul Yi, Sung Jin An, Jin Kyoung Yoo, Young Joon Hong
  • Lighting device, backlight unit, and printed circuit board thereof
    Patent number: 7775681
    Abstract: A backlight unit including a circuit board mounted with light emitting diodes and formed with connecting pads electrically connected with the light emitting diodes, a driver installed on one surface of the circuit board and configured to drive the light emitting diodes, a connector coupled to the connecting pads of the circuit board, in which the connector has a connecting direction changed toward the driver, and a connecting line for connecting the connector to the driver.
    Type: Grant
    Filed: September 26, 2007
    Date of Patent: August 17, 2010
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Yong Suk Kim, Hoon Hurh, Geun Ho Kim
  • Light emitting device and method of manufacturing the same
    Publication number: 20080272382
    Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.
    Type: Application
    Filed: February 16, 2007
    Publication date: November 6, 2008
    Applicants: LG Electronics Inc., LG INNOTEK CO., LTD.
    Inventors: Jong Wook Kim, Hyun Kyong Cho, Gyu Chul Yi, Sung Ji An, Jin Kyoung Yoo, Young Joon Hong
  • LIGHT EMITTING DIODE HAVING VERTICAL TOPOLOGY AND METHOD OF MAKING THE SAME
    Publication number: 20140091277
    Abstract: An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
    Type: Application
    Filed: December 4, 2013
    Publication date: April 3, 2014
    Applicants: LG INNOTEK CO., LTD., LG ELECTRONICS INC.
    Inventors: Jun Ho JANG, Jae Wan CHOI, Duk Kyu BAE, Hyun Kyong CHO, Jong Kook PARK, Sun Jung KIM, Jeong Soo LEE
  • Light emitting device and method of manufacturing the same
    Patent number: 8912556
    Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.
    Type: Grant
    Filed: January 6, 2014
    Date of Patent: December 16, 2014
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jong Wook Kim, Hyun Kyong Cho, Gyu Chul Yi, Sung Jin An, Jin Kyoung Yoo, Young Joon Hong
  • Method of manufacturing light emitting diodes
    Patent number: 7776637
    Abstract: A method of manufacturing a light emitting diode, wherein a laser lift-off (LLO) layer and an epi-layer are formed on a nitride semiconductor substrate, and the nitride semiconductor substrate is then separated through a laser lift-off process, thereby improving the characteristics of the epi-layer and enabling to fabricate a high-grade and high-efficiency light emitting diode. Further, the LLO layer thus prepared is removed using a laser beam so that the relatively expensive nitride semiconductor substrate can be re-used, thereby reducing manufacturing costs.
    Type: Grant
    Filed: May 25, 2006
    Date of Patent: August 17, 2010
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventor: See jong Leem
  • Sub-mount for mounting light emitting device and light emitting device package
    Patent number: 7714341
    Abstract: A sub-amount for mounting a light emitting device and a light emitting device package using the sub-mount are disclosed. The light emitting device package includes a package body having a mount for mounting a light emitting device, and through holes, electrodes formed on the package body, and a reflective layer arranged on one of the electrodes formed on an upper surface of the package body. The reflective layer has openings for enabling the light emitting device to be coupled to the electrodes.
    Type: Grant
    Filed: December 5, 2006
    Date of Patent: May 11, 2010
    Assignees: LG Innotek Co., Ltd., LG Electronics Inc.
    Inventors: Park Chil Keun, Song Ki Chang, Kim Geun Ho, Won Yu Ho
  • Light emitting device having light extraction structure and method for manufacturing the same
    Patent number: 9837578
    Abstract: A light emitting device including a support layer; a reflective electrode disposed on the support layer; an ohmic electrode disposed on the reflective electrode, the ohmic electrode including a transparent electrode; and a semiconductor structure disposed on the ohmic electrode, the semiconductor structure including a p-type semiconductor layer disposed on the ohmic electrode; a light emitting layer disposed on the p-type semiconductor layer; and an n-type semiconductor layer disposed on the light emitting layer. Further, the transparent electrode has a thickness in the range of 40 nm to 90 nm.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: December 5, 2017
    Assignees: LG INNOTEK CO., LTD., LG ELECTRONICS INC.
    Inventors: Hyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
  • LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20150102370
    Abstract: A light emitting device is disclosed. The light emitting device includes a conductive support layer; a reflective layer disposed on the conductive support layer; a nitride semiconductor layer disposed on the reflective layer. Furthermore, the nitride semiconductor layer includes a second-type semiconductor layer on the reflective layer, an active layer on the second-type semiconductor layer, and a first-type semiconductor layer on the active layer; a light extraction structure disposed on the first-type semiconductor layer; and a first-type electrode disposed on the light extraction structure.
    Type: Application
    Filed: November 24, 2014
    Publication date: April 16, 2015
    Applicants: LG INNOTEK CO., LTD., LG ELECTRONICS INC.
    Inventors: Jong Wook KIM, Hyun Kyong CHO, Gyu Chul YI, Sung Jin AN, Jin Kyoung YOO, Young Joon HONG
  • LED having vertical structure and method for fabricating the same
    Patent number: 7812357
    Abstract: A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layer and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.
    Type: Grant
    Filed: December 15, 2006
    Date of Patent: October 12, 2010
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jong Wook Kim, Jae Wan Choi, Hyun Kyong Cho, Jong Ho Na, Jun Ho Jang
  • Post structure, semiconductor device and light emitting device using the structure, and method for forming the same
    Patent number: 7867885
    Abstract: A nanometer-scale post structure and a method for forming the same are disclosed. More particularly, a post structure, a light emitting device using the structure, and a method for forming the same, which is capable of forming a nanometer-scale post structure having a repetitive pattern by using an etching process, are disclosed. The method includes forming unit patterns on a substrate by use of a first material, growing a wet-etchable second material on the substrate formed with the unit patterns, and wet etching the substrate having the grown second material.
    Type: Grant
    Filed: February 22, 2007
    Date of Patent: January 11, 2011
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventor: Duk Kyu Bae
  • Nitride based light emitting device
    Publication number: 20070272936
    Abstract: A nitride based light emitting device is disclosed. More particularly, a nitride based light emitting device capable of improving light emitting efficiency and reliability thereof is disclosed. The nitride based light emitting device includes a first conductive semiconductor layer connected to a first electrode, a second conductive semiconductor layer connected to a second electrode, an active layer located between the first conductive semiconductor layer and the second conductive semiconductor layer and having a quantum well structure, a first insertion layer located in at least one of a boundary between the first conductive semiconductor layer and the active layer and a boundary between the second conductive semiconductor layer and the active layer, and a second insertion layer located adjacent to the first insertion.
    Type: Application
    Filed: February 6, 2007
    Publication date: November 29, 2007
    Applicants: LG ELECTRONICS INC., LG INNOTEK CO., LTD
    Inventor: Johng Eon Shin
  • Light emitting device having vertical structure, package thereof and method for manufacturing the same
    Patent number: 8546837
    Abstract: A light emitting device having a vertical structure, a package thereof and a method for manufacturing the same, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity, are disclosed. The method includes growing a semiconductor layer having a multilayer structure over a substrate, forming a first electrode on the semiconductor layer, separating the substrate including the grown semiconductor layer into unit devices, bonding each of the separated unit devices on a sub-mount, separating the substrate from the semiconductor layer, and forming a second electrode on a surface of the semiconductor layer exposed in accordance with the separation of the substrate.
    Type: Grant
    Filed: April 6, 2011
    Date of Patent: October 1, 2013
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jun Ho Jang, Geun ho Kim
  • Light emitting diode having vertical topology and method of making the same
    Patent number: 9530936
    Abstract: An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
    Type: Grant
    Filed: December 4, 2013
    Date of Patent: December 27, 2016
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventors: Jun Ho Jang, Jae Wan Choi, Duk Kyu Bae, Hyun Kyong Cho, Jong Kook Park, Sun Jung Kim, Jeong Soo Lee
  • Paste composition for front electrode of solar cell, and solar cell including the same
    Patent number: 9362017
    Abstract: Provided is a paste composition for front electrode of a solar cell. The paste composition includes conductive power, an organic vehicle, a glass frit, and an additive. The additive includes at least one material selected from the group consisting of Zn, Sb, V, W, Cr, Cd, Re, Sn, Mo, Mn, Ni, Co, Cu, and metal oxide including one of the foregoing materials.
    Type: Grant
    Filed: October 28, 2011
    Date of Patent: June 7, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Soon Gil Kim, Sang Gon Kim, Jun Phill Eom, Kyoung Hoon Chai
  • Light Emitting Diode having vertical topology and method of making the same
    Publication number: 20070295952
    Abstract: An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
    Type: Application
    Filed: February 20, 2007
    Publication date: December 27, 2007
    Applicants: LG ELECTRONICS INC., LG INNOTEK CO., LTD
    Inventors: Jun Ho Jang, Jae Wan Choi, Duk Kyu Bae, Hyun Kyong Cho, Jong Kook Park, Sun Jung Kim, Jeong Soo Lee
Narrow Results

Filter by US Classification