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  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
    Patent number: 7915151
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor.
    Type: Grant
    Filed: October 4, 2006
    Date of Patent: March 29, 2011
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Nanowire heterostructures
    Publication number: 20080191196
    Abstract: The present invention generally relates to nanoscale heterostructures and, in some cases, to nanowire heterostructures exhibiting ballistic transport, and/or to metal-semiconductor junctions that that exhibit no or reduced Schottky barriers. One aspect of the invention provides a solid nanowire having a core and a shell, both of which are essentially undoped. For example, in one embodiment, the core may consist essentially of undoped germanium and the shell may consist essentially of undoped silicon. Carriers are injected into the nanowire, which can be ballistically transported through the nanowire. In other embodiments, however, the invention is not limited to solid nanowires, and other configurations, involving other nanoscale wires, are also contemplated within the scope of the present invention. Yet another aspect of the invention provides a junction between a metal and a nanoscale wire that exhibit no or reduced Schottky barriers.
    Type: Application
    Filed: May 25, 2007
    Publication date: August 14, 2008
    Inventors: Wei Lu, Jie Xiang, Yue Wu, Brian P. Timko, Hao Yan, Charles M. Lieber
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
    Patent number: 7666708
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal is, axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less an 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety assembling techniques may be used to fabricate devices from such a semiconductor.
    Type: Grant
    Filed: October 4, 2006
    Date of Patent: February 23, 2010
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • INTERFACES FOR SYRINGE-INJECTABLE ELECTRONICS
    Publication number: 20180328884
    Abstract: The present invention generally relates to injectable electronics. In some aspects, the present invention is generally directed to systems and methods for interfacing an electrical cable with electrical elements, such as nanoscale wires, that are injected or otherwise introduced into a subject. The subject may be living or non-living. In one set of embodiments, electrical elements introduced within a subject may be placed in electrical communication to a circuit board using a plurality of electrically isolated contacts that the circuit board can clamp or otherwise connect to. The electrical contacts may be in electrical communication with the electrical elements using a joining portion. The circuit board can also be connected to an electrical cable that can be attached, for example, to a computer. In some cases, the electrical cable can be attached or detached to or from the circuit board, e.g.
    Type: Application
    Filed: May 11, 2018
    Publication date: November 15, 2018
    Applicant: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Thomas Gerard Schuhmann, Jun Yao, Guosong Hong, Tian-Ming Fu, Jungmin Lee, Hong-Gyu Park
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
    Patent number: 7476596
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor.
    Type: Grant
    Filed: October 4, 2006
    Date of Patent: January 13, 2009
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Nanoscale wires and related devices
    Patent number: 7301199
    Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.
    Type: Grant
    Filed: July 16, 2002
    Date of Patent: November 27, 2007
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln J. Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David C. Smith, Deli Wang, Zhaohui Zhong
  • NANOSENSORS AND RELATED TECHNOLOGIES
    Publication number: 20160033498
    Abstract: The present invention generally relates to nanotechnology and sub-microelectronic circuitry, as well as associated methods and devices, for example, nanoscale wire devices and methods for use in determining nucleic acids or other analytes suspected to be present in a sample (for example, their presence and/or dynamical information), e.g., at the single molecule level. For example, a nanoscale wire device can be used in some cases to detect single base mismatches within a nucleic acid (e.g., by determining association and/or dissociation rates). In one aspect, dynamical information such as a binding constant, an association rate, and/or a dissociation rate, can be determined between a nucleic acid or other analyte, and a binding partner immobilized relative to a nanoscale wire. In some cases, the nanoscale wire includes a first portion comprising a metal-semiconductor compound, and a second portion that does not include a metal-semiconductor compound.
    Type: Application
    Filed: June 30, 2015
    Publication date: February 4, 2016
    Applicant: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Ying Fang, Fernando Patolsky
  • Nanowire heterostructures
    Patent number: 7858965
    Abstract: The present invention generally relates to nanoscale heterostructures and, in some cases, to nanowire heterostructures exhibiting ballistic transport, and/or to metal-semiconductor junctions that that exhibit no or reduced Schottky barriers. One aspect of the invention provides a solid nanowire having a core and a shell, both of which are essentially undoped. For example, in one embodiment, the core may consist essentially of undoped germanium and the shell may consist essentially of undoped silicon. Carriers are injected into the nanowire, which can be ballistically transported through the nanowire. In other embodiments, however, the invention is not limited to solid nanowires, and other configurations, involving other nanoscale wires, are also contemplated within the scope of the present invention. Yet another aspect of the invention provides a junction between a metal and a nanoscale wire that exhibit no or reduced Schottky barriers.
    Type: Grant
    Filed: May 25, 2007
    Date of Patent: December 28, 2010
    Assignee: President and Fellows of Harvard College
    Inventors: Wei Lu, Jie Xiang, Yue Wu, Brian P. Timko, Hao Yan, Charles M. Lieber
  • NANOSCALE WIRE-BASED MEMORY DEVICES
    Publication number: 20110001117
    Abstract: The present invention generally relates to nanotechnology and sub-microelectronic devices that can be used in circuitry, and, in particular, to nanoscale wires and other nanostructures able to encode data. One aspect of the present invention is directed to a device comprising an electrical crossbar array comprising at least two crossed wires at a cross point. In some cases, at least one of the crossed wires is a nanoscale wire, and in certain instances, at least one of the crossed wires is a nanoscale wire comprising a core and at least one shell surrounding the core. For instance, the core may comprise a crystal (e.g., crystalline silicon) and the shell may be at least partially amorphous (e.g., amorphous silicon). In certain embodiments, the cross point may exhibit intrinsic current rectification, or other electrical behaviors, and the cross point can be used as a memory device.
    Type: Application
    Filed: January 21, 2009
    Publication date: January 6, 2011
    Applicant: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Yajie Dong, Wei Lu, Guihua Yu, Michael MeAlphine
  • Nanosensors and related technologies
    Publication number: 20100087013
    Abstract: The present invention generally relates to nanotechnology and sub-microelectronic circuitry, as well as associated methods and devices, for example, nanoscale wire devices and methods for use in determining nucleic acids or other analytes suspected to be present in a sample (for example, their presence and/or dynamical information), e.g., at the single molecule level. For example, a nanoscale wire device can be used in some cases to detect single base mismatches within a nucleic acid (e.g., by determining association and/or dissociation rates). In one aspect, dynamical information such as a binding constant, an association rate, and/or a dissociation rate, can be determined between a nucleic acid or other analyte, and a binding partner immobilized relative to a nanoscale wire. In some cases, the nanoscale wire includes a first portion comprising a metal-semiconductor compound, and a second portion that does not include a metal-semiconductor compound.
    Type: Application
    Filed: June 11, 2007
    Publication date: April 8, 2010
    Applicant: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Ying Fang, Fernando Patolsky
  • NANOSCALE WIRES, NANOSCALE WIRE FET DEVICES, AND NANOTUBE-ELECTRONIC HYBRID DEVICES FOR SENSING AND OTHER APPLICATIONS
    Publication number: 20140184196
    Abstract: The present invention generally relates to nanotechnology, including field effect transistors and other devices used as sensors (for example, for electrophysiological studies), nanotube structures, and applications. Certain aspects of the present invention are generally directed to transistors such as field effect transistors, and other similar devices. In one set of embodiments, a field effect transistor is used where a nanoscale wire, for example, a silicon nanowire, acts as a transistor channel connecting a source electrode to a drain electrode. In some cases, a portion of the transistor channel is exposed to an environment that is to be determined, for example, the interior or cytosol of a cell. A nanotube or other suitable fluidic channel may be extended from the transistor channel into a suitable environment, such as a contained environment within a cell, so that the environment is in electrical communication with the transistor channel via the fluidic channel.
    Type: Application
    Filed: June 7, 2012
    Publication date: July 3, 2014
    Applicant: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Xiaojie Duan, Ruixuan Gao, Ping Xie, Xiaocheng Jiang
  • Nanoscale wires, nanoscale wire FET devices, and nanotube-electronic hybrid devices for sensing and other applications
    Patent number: 9595685
    Abstract: The present invention generally relates to nanotechnology, including field effect transistors and other devices used as sensors (for example, for electrophysiological studies), nanotube structures, and applications. Certain aspects of the present invention are generally directed to transistors such as field effect transistors, and other similar devices. In one set of embodiments, a field effect transistor is used where a nanoscale wire, for example, a silicon nanowire, acts as a transistor channel connecting a source electrode to a drain electrode. In some cases, a portion of the transistor channel is exposed to an environment that is to be determined, for example, the interior or cytosol of a cell. A nanotube or other suitable fluidic channel may be extended from the transistor channel into a suitable environment, such as a contained environment within a cell, so that the environment is in electrical communication with the transistor channel via the fluidic channel.
    Type: Grant
    Filed: June 7, 2012
    Date of Patent: March 14, 2017
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Xiaojie Duan, Ruixuan Gao, Ping Xie, Xiaocheng Jiang
  • BENT NANOWIRES AND RELATED PROBING OF SPECIES
    Publication number: 20160282303
    Abstract: The present invention generally relates to nanoscale devices and methods, including bent nanowires and other bent nanoscale objects, and in particular, the ability to probe cells with nanoscale objects. In some aspects, nanoscale objects, including nanowires, are provided that facilitate cell probing, e.g. nanowires that are surface modified such that cells can fuse with the nanowires. Devices including nanoscale objects are provided that allow small or large scale (e.g., multiplexed) probing of cells, and related methods of making such nanoscale objects and devices, and methods of investigating cells, are provided by certain embodiments of the invention. In a related set of embodiments, the present invention is generally related to bent nanowires and other bent nanoscale objects. For instance, in one aspect, the present invention is generally related to a semiconductor nanoscale wire having at least one kink. The semiconductor nanoscale wire may be formed out of any suitable semiconductor, e.g.
    Type: Application
    Filed: February 18, 2016
    Publication date: September 29, 2016
    Inventors: Charles M. Lieber, Bozhi Tian, Ping Xie, Thomas J. Kempa, Itzhaq Cohen-Karni, Quan Qing, Xiaojie Duan
  • Nanoscale sensors
    Publication number: 20100227382
    Abstract: Various aspects of the present invention generally relate to nanoscale wire devices and methods for use in determining analytes suspected to be present in a sample, and systems and methods of immobilizing entities such as reaction entities relative to nanoscale wires. In one aspect, a nucleic acid, such as DNA, may be immobilized relative to a nanoscale wire, and in some cases, grown from the nanoscale wire. In certain embodiments, the nucleic acid may interact with entities such as other nucleic acids, proteins, etc., and in some cases, such interactions may be reversible. As an example, an enzyme such as telomerase may be allowed to bind to DNA immobilized relative to a nanoscale wire. The telomerase may extend the length of the DNA, for instance, by reaction with free deoxynucleotide triphosphates in solution; additionally, various properties of the nucleic acid may be determined, for example, using electric field interactions between the nucleic acid and the nanoscale wire.
    Type: Application
    Filed: August 9, 2006
    Publication date: September 9, 2010
    Applicant: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Fernando Patolsky, Gengfeng Zheng
  • NANOSCALE SENSORS
    Publication number: 20100112546
    Abstract: Various aspects of the present invention generally relate to nanoscale wire devices and methods for use in determining analytes suspected to be present in a sample, and systems and methods of immobilizing entities such as reaction entities relative to nanoscale wires. In one aspect, a nucleic acid, such as DNA, may be immobilized relative to a nanoscale wire, and in some cases, grown from the nanoscale wire. In certain embodiments, the nucleic acid may interact with entities such as other nucleic acids, proteins, etc., and in some cases, such interactions may be reversible. As an example, an enzyme such as telomerase may be allowed to bind to DNA immobilized relative to a nanoscale wire. The telomerase may extend the length of the DNA, for instance, by reaction with free deoxynucleotide triphosphates in solution; additionally, various properties of the nucleic acid may be determined, for example, using electric field interactions between the nucleic acid and the nanoscale wire.
    Type: Application
    Filed: August 5, 2009
    Publication date: May 6, 2010
    Applicant: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Fernando Patolsky, Gengfeng Zheng
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
    Publication number: 20020130311
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and my have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Application
    Filed: August 22, 2001
    Publication date: September 19, 2002
    Inventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
    Publication number: 20100093158
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Application
    Filed: October 4, 2006
    Publication date: April 15, 2010
    Applicant: President and fellows of Harvard College
    Inventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • DOPED ELONGATED SEMICONDUCTORS, GROWING SUCH SEMICONDUCTORS, DEVICES INCLUDING SUCH SEMICONDUCTORS AND FABRICATING SUCH DEVICES
    Publication number: 20120329251
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Application
    Filed: June 6, 2012
    Publication date: December 27, 2012
    Applicant: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Jiangtao Hu
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
    Patent number: 7211464
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Grant
    Filed: March 17, 2005
    Date of Patent: May 1, 2007
    Assignee: President & Fellows of Harvard College
    Inventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Multi-level table deltas
    Patent number: 9727453
    Abstract: A memory system or flash card may include an algorithm or process for managing the handling of large tables in memory. A delta may be used for each table to accumulate updates. There may be a plurality of deltas for a multi-level delta structure. In one example, the first level delta is stored in random access memory (RAM), while the other level deltas are stored in the flash memory. Multiple-level deltas may improve the number of flash writes and reduce the number and amount of each flush to the actual table in flash. The use of multi-level deltas may improve performance by more efficiently writing to the table in flash.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: August 8, 2017
    Assignee: SanDisk Technologies LLC
    Inventor: Opher Lieber
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