Search Patents
  • PROGRAMMING AND ERASURE SCHEMES FOR ANALOG MEMORY CELLS
    Publication number: 20120224423
    Abstract: A method for data storage, in a memory that includes multiple analog memory cells, includes setting a parameter of an iterative process applied to a group of the memory cells based on one or more data values stored in at least one of the memory cells in the memory. The iterative process is performed in the group of the memory cells in accordance with the set parameter.
    Type: Application
    Filed: May 15, 2012
    Publication date: September 6, 2012
    Applicant: ANOBIT TECHNOLOGIES LTD.
    Inventors: Eyal Gurgi, Yoav Kasorla, Ofir Shalvi
  • MEMORY POWER AND PERFORMANCE MANAGEMENT
    Publication number: 20080126686
    Abstract: A method for storage includes collecting information regarding respective performance characteristics of a plurality of memory units in a memory array, each memory unit including one or more cells of the memory array. When data are received for storage in the memory array, a memory unit is selected responsively to the respective performance characteristics, and the received data are stored in the selected memory unit.
    Type: Application
    Filed: November 27, 2007
    Publication date: May 29, 2008
    Applicant: ANOBIT TECHNOLOGIES LTD.
    Inventors: Dotan Sokolov, Ofir Shalvi
  • ENHANCED PROGRAMMING AND ERASURE SCHEMES FOR ANALOG MEMORY CELLS
    Publication number: 20120224404
    Abstract: A method for data storage includes setting a group of analog memory cells to respective analog values by performing an iterative process that applies a sequence of pulses to the memory cells in the group. During the iterative process, a progress of the iterative process is assessed, and a parameter of the iterative process is modified responsively to the assessed progress. The iterative process is continued in accordance with the modified parameter.
    Type: Application
    Filed: May 15, 2012
    Publication date: September 6, 2012
    Applicant: ANOBIT TECHNOLOGIES LTD.
    Inventors: Eyal Gurgi, Yoav Kasorla, Ofir Shalvi
  • Memory power and performance management
    Patent number: 7924648
    Abstract: A method for storage includes collecting information regarding respective performance characteristics of a plurality of memory units in a memory array, each memory unit including one or more cells of the memory array. When data are received for storage in the memory array, a memory unit is selected responsively to the respective performance characteristics, and the received data are stored in the selected memory unit.
    Type: Grant
    Filed: November 27, 2007
    Date of Patent: April 12, 2011
    Assignee: Anobit Technologies Ltd.
    Inventors: Dotan Sokolov, Ofir Shalvi
  • AUTOMATIC DEFECT MANAGEMENT IN MEMORY DEVICES
    Publication number: 20120159281
    Abstract: A method for data storage in a memory including multiple memory cells arranged in blocks, includes storing first and second pages in respective first and second groups of the memory cells within a given block of the memory. A pattern of respective positions of one or more defective memory cells is identified in the first group. The second page is recovered by applying the pattern identified in the first group to the second group of the memory cells.
    Type: Application
    Filed: February 26, 2012
    Publication date: June 21, 2012
    Applicant: ANOBIT TECHNOLOGIES LTD.
    Inventors: Ofir Shalvi, Naftali Sommer, Oren Golov
  • STORAGE SYSTEM EXPORTING INTERNAL STORAGE RULES
    Publication number: 20120246435
    Abstract: A data storage method includes, in a memory controller that accepts memory access commands from a host for execution in one or more memory units, holding a definition of a policy to be applied by the memory controller in the execution of the memory access commands in the memory units. The policy is reported from the memory controller to the host so as to cause the host to format memory access commands based on the reported policy.
    Type: Application
    Filed: March 14, 2012
    Publication date: September 27, 2012
    Applicant: ANOBIT TECHNOLOGIES LTD.
    Inventors: Avraham Meir, Micha Anholt, Ariel Maislos, Camuel Gilyadov, Doron Fischer
  • DECODING OF ERROR CORRECTION CODE USING PARTIAL BIT INVERSION
    Publication number: 20090187803
    Abstract: A method includes receiving an Error Correction Code (ECC) code word, which includes multiple encoded bits that represent data and have a bit order. Multiple subsets of the encoded bits are selected using a selection criterion that does not sequentially follow the bit order. For each subset in at least some of the multiple subsets, the bits in the subset are inverted and the code word having the inverted bits is decoded, so as to reconstruct the data.
    Type: Application
    Filed: January 19, 2009
    Publication date: July 23, 2009
    Applicant: ANOBIT TECHNOLOGIES LTD.
    Inventors: Micha Anholt, Ofir Shalvi
  • WEAR LEVEL ESTIMATION IN ANALOG MEMORY CELLS
    Publication number: 20090168524
    Abstract: A method for operating a memory includes applying at least one pulse to a group of analog memory cells, so as to cause the memory cells in the group to assume respective storage values. After applying the pulse, the respective storage values are read from the memory cells in the group. One or more statistical properties of the read storage values are computed. A wear level of the group of the memory cells is estimated responsively to the statistical properties.
    Type: Application
    Filed: December 25, 2008
    Publication date: July 2, 2009
    Applicant: Anobit Technologies Ltd.
    Inventors: Oren Golov, Eyal Gurgi, Dotan Sokolov, Yoav Kasorla, Shai Winter
  • REDUNDANT STORAGE IN NON-VOLATILE MEMORY BY STORING REDUNDANCY INFORMATION IN VOLATILE MEMORY
    Publication number: 20120254694
    Abstract: A method for data storage includes storing two or more data items in a non-volatile memory. Redundancy information is calculated over the data items, and the redundancy information is stored in a volatile memory. Upon a failure to retrieve a data item from the non-volatile memory, the data item is reconstructed from remaining data items stored in the non-volatile memory and from the redundancy information stored in the volatile memory.
    Type: Application
    Filed: March 25, 2012
    Publication date: October 4, 2012
    Applicant: ANOBIT TECHNOLOGIES LTD.
    Inventors: Oren Golov, Oren Segal, Uzi Doron, Julian Vlaiko, Avraham Meir
  • REJUVENATION OF ANALOG MEMORY CELLS
    Publication number: 20120044762
    Abstract: A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells.
    Type: Application
    Filed: October 30, 2011
    Publication date: February 23, 2012
    Applicant: ANOBIT TECHNOLOGIES LTD
    Inventors: Barak Rotbard, Naftali Sommer, Shai Winter, Ofir Shalvi, Dotan Sokolov, Or Ordentlich, Micha Anholt
  • ADAPTIVE ESTIMATION OF MEMORY CELL READ THRESHOLDS
    Publication number: 20100091535
    Abstract: A method for operating a memory (28) that includes a plurality of analog memory cells (32) includes storing data in the memory by writing first storage values to the cells. Second storage values are read from the cells, and a Cumulative Distribution Function (CDF) of the second storage values is estimated. The estimated CDF is processed so as to compute one or more thresholds. A memory access operation is performed on the cells using the one or more thresholds.
    Type: Application
    Filed: March 11, 2008
    Publication date: April 15, 2010
    Applicant: ANOBIT TECHNOLOGIES LTD
    Inventors: Naftali Sommer, Ofir Shalvi, Uri Perlmutter, Oren Golov, Eyal Gurgi, Micha Anholt, Dotan Sokolov
  • Data Storage In Analog Memory Cell Arrays Having Erase Failures
    Publication number: 20100199150
    Abstract: A method for data storage includes performing an erasure operation on a group of analog memory cells (32). One or more of the memory cells in the group, which failed the erasure operation, are identified as erase-failed cells. A storage configuration that is used for programming the analog memory cells in the group is modified responsively to the identified erase-failed cells. Data is stored in the group of the analog memory cells using the modified storage configuration.
    Type: Application
    Filed: October 12, 2008
    Publication date: August 5, 2010
    Applicant: ANOBIT TECHNOLOGIES LTD
    Inventors: Ofir Shalvi, Shai Winter, Naftali Sommer, Dotan Sokolov
  • REJUVENATION OF ANALOG MEMORY CELLS
    Publication number: 20100165689
    Abstract: A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells.
    Type: Application
    Filed: December 30, 2009
    Publication date: July 1, 2010
    Applicant: ANOBIT TECHNOLOGIES LTD
    Inventors: Barak Rotbard, Naftali Sommer, Shai Winter, Ofir Shalvi, Dotan Sokolov, Or Ordentlich, Micha Anholt
  • STORAGE AT M BITS/CELL DENSITY IN N BITS/CELL ANALOG MEMORY CELL DEVICES, M>N
    Publication number: 20100124088
    Abstract: A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.
    Type: Application
    Filed: November 15, 2009
    Publication date: May 20, 2010
    Applicant: ANOBIT TECHNOLOGIES LTD
    Inventors: Ofir Shalvi, Naftali Sommer, Uri Perlmutter, Dotan Sokolov
  • Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
    Publication number: 20120201078
    Abstract: A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.
    Type: Application
    Filed: April 18, 2012
    Publication date: August 9, 2012
    Applicant: ANOBIT TECHNOLOGIES LTD.
    Inventors: Ofir Shalvi, Naftali Sommer, Uri Perlmutter, Dotan Sokolov
  • HIGH-SPEED PROGRAMMING OF MEMORY DEVICES
    Publication number: 20080148115
    Abstract: A method for operating a memory that includes a plurality of analog memory cells includes storing data in a first group of the memory cells by writing respective first cell values to the memory cells in the first group. After storing the data, respective second cell values are read from the memory cells in the first group, and differences are found between the respective first and second cell values for each of one or more of the memory cells in the first group. The differences are processed to produce error information, and the error information is stored in a second group of the memory cells.
    Type: Application
    Filed: December 17, 2007
    Publication date: June 19, 2008
    Applicant: ANOBIT TECHNOLOGIES LTD.
    Inventors: Dotan Sokolov, Ofir Shalvi
  • HIGH-PERFORMANCE SAS TARGET
    Publication number: 20120265962
    Abstract: A method for data storage includes, in a storage device that communicates with a host over a storage interface for executing a storage command in a memory of the storage device, estimating an expected data under-run between fetching data for the storage command from the memory and sending the data over the storage interface. A data size to be prefetched from the memory, in order to complete uninterrupted execution of the storage command, is calculated in the storage device based on the estimated data under-run. The storage command is executed in the memory while prefetching from the memory data of at least the calculated data size.
    Type: Application
    Filed: April 5, 2012
    Publication date: October 18, 2012
    Applicant: ANOBIT TECHNOLOGIES LTD.
    Inventor: Arie Peled
  • Wear level estimation in analog memory cells
    Patent number: 8085586
    Abstract: A method for operating a memory includes applying at least one pulse to a group of analog memory cells, so as to cause the memory cells in the group to assume respective storage values. After applying the pulse, the respective storage values are read from the memory cells in the group. One or more statistical properties of the read storage values are computed. A wear level of the group of the memory cells is estimated responsively to the statistical properties.
    Type: Grant
    Filed: December 25, 2008
    Date of Patent: December 27, 2011
    Assignee: Anobit Technologies Ltd.
    Inventors: Oren Golov, Eyal Gurgi, Dotan Sokolov, Yoav Kasoria, Shai Winter
  • EFFICIENT READOUT FROM ANALOG MEMORY CELLS USING DATA COMPRESSION
    Publication number: 20090228761
    Abstract: A method for data storage includes storing data in a group of analog memory cells by writing respective input storage values to the memory cells in the group. After storing the data, respective output storage values are read from the analog memory cells in the group. Respective confidence levels of the output storage values are estimated, and the confidence levels are compressed. The output storage values and the compressed confidence levels are transferred from the memory cells over an interface to a memory controller.
    Type: Application
    Filed: March 4, 2009
    Publication date: September 10, 2009
    Applicant: ANOBIT TECHNOLOGIES LTD
    Inventors: Uri Perlmutter, Dotan Sokolov, Ofir Shalvi, Oren Golov
  • Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
    Patent number: 8208304
    Abstract: A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.
    Type: Grant
    Filed: November 15, 2009
    Date of Patent: June 26, 2012
    Assignee: Anobit Technologies Ltd.
    Inventors: Ofir Shalvi, Naftali Sommer, Uri Perlmutter, Dotan Sokolov
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