Abstract: A group III-nitride quaternary material system and method is disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduces or eliminates phase separation and provides increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first InGaAlN layer of a first conduction type formed substantially without phase separation, an InGaAlN active layer substantially without phase separation, and a third InGaAlN layer of an opposite conduction type formed substantially without phase separation.

Abstract: A group III-nitride quatenary material system and method is disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduces or eliminates phase separation and provides increased emission efficiency and reliability. In an exemplary embodiment the semiconductor structure includes first GaAINAs layer of a first conduction type formed substantially without phase separation, an GaAINAs active layer substantially without phase separation, and a third GaAINAs layer of an opposite conduction type formed substantially without phase separation.

Abstract: Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using an InGaAlNAs material system of a first conduction type formed substantially without phase separation, a quaternary or pentenary material active layer using an InGaAlNAs material system substantially without phase separation, and a third ternary, quaternay or pentenary an InGaAlNAs material system of an opposite conduction type formed substantially without phase separation.

Abstract: Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduces or eliminates phase separation and provides increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using an InGaAlNP layer of a first conduction type formed substantially without phase separation, a quaternary or pentenary material active layer using an InGaAlNP active layer substantially without phase separation, and a third ternary, quaternary or pentenary InGaAlNP material layer of an opposite conduction type formed substantially without phase separation.

Abstract: Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using BlnGaAlN material system of a first conduction type formed substantially without phase separation, and a quaternary or pentenary material active layer using BlnGaAlN material system substantially without phase separation, and a third ternary, quaternary or pentenary material layer using BlnGaAlN material system of an opposite conduction type formed substantially without phase separation.