Search Patents
  • Semiconductor ceramic, semiconductor ceramic element and circuit protection element
    Patent number: 6455454
    Abstract: Provided is a semiconductor ceramic and a semiconductor ceramic element each having a room temperature specific resistance of 3 &OHgr;·cm or lower and a resistance temperature characteristic of 9%/° C. or more. The semiconductor ceramic is characterized in that the ratio R1/(R1+R2), in which R1 is the transgranular resistance value of the crystal particles and R2 is the intergranular resistance value of the crystal particles and R1+R2 is the overall resistance value representing the sum of R1 and R2, is about 0.35 to 0.85.
    Type: Grant
    Filed: April 28, 2000
    Date of Patent: September 24, 2002
    Assignee: Murata Manufacturing Co. Ltd.
    Inventors: Yasuhiro Nabika, Tetsukazu Okamoto, Toshiharu Hirota
  • Integrated voltage divider
    Patent number: 5600176
    Abstract: Integrated voltage divider comprising partial resistors (R1 ,R2) formed of paths of polycrystalline semiconductor material applied over a dielectric layer (4) on a semiconductor substrate (5). Under the paths, each forming a partial resistor (R1,R2) in the semiconductor substrate (5), a well (6 and 7 respectively) is formed having a conductivity type opposite to the conductivity type of the semiconductor substrate (5). The total surfaces of the paths forming the partial resistors (R1,R2) are dimensioned so that their ratio equals the inverse ratio of the resistor values of the two partial resistors (R1 ,R2).
    Type: Grant
    Filed: June 2, 1995
    Date of Patent: February 4, 1997
    Assignee: Texas Instruments Deustchland GmbH
    Inventor: Walter Bucksch
  • SEMICONDUCTOR DEVICE
    Publication number: 20250079370
    Abstract: A semiconductor device includes: a first semiconductor chip mounted onto a die pad; a second semiconductor chip mounted face down onto the first semiconductor chip and including a band gap element. The first semiconductor chip and the second semiconductor chip are electrically bonded to each other by a bonding material. A filler is disposed between the first semiconductor chip and the second semiconductor chip. When the distance from the band gap element to the bonding material is defined as r1 and the distance from the band gap element to an outline side of the first semiconductor chip is defined as r2, r1/r2?(?0.148×r1+0.021)×r2+(0.550×r1+0.020).
    Type: Application
    Filed: November 19, 2024
    Publication date: March 6, 2025
    Inventors: Shuichi OGATA, Hisashi KATADA, Hiroaki YABU, Katsumi OTANI
  • SEMICONDUCTOR ISOLATION STRUCTURE
    Publication number: 20150294965
    Abstract: The invention relates to a semiconductor isolation structure. More particularly, the present invention relates to a semiconductor isolation structure suitable for providing high voltage isolation. Embodiments disclosed include a semiconductor structure (10) comprising: a first semiconductor region (R1), a second semiconductor region (R2) within the first semiconductor region (R1), and a voltage isolator (11) separating the first and second semiconductor regions (R1, R2), the voltage isolator (11) comprising: a nested series of insulating regions (T1, T2) around the perimeter of the second semiconductor region (R2), an intermediate semiconductor region (I1, I2) between each adjacent pair of nested insulating regions (T1, T2), and a voltage control device (12) comprising a conducting element (D1-D3) connected to at least one intermediate semiconductor region (I1, I2) in parallel with the at least one insulating region (T1, T2), so as to control a voltage across the at least one insulating region (T1, T2).
    Type: Application
    Filed: March 30, 2015
    Publication date: October 15, 2015
    Inventors: Joan Wichard Strijker, Inesz Marycka Emmerik-Weijland
  • Semiconductor isolation structure
    Patent number: 9543288
    Abstract: The invention relates to a semiconductor isolation structure. More particularly, the present invention relates to a semiconductor isolation structure suitable for providing high voltage isolation. Embodiments disclosed include a semiconductor structure (10) comprising: a first semiconductor region (R1), a second semiconductor region (R2) within the first semiconductor region (R1), and a voltage isolator (11) separating the first and second semiconductor regions (R1, R2), the voltage isolator (11) comprising: a nested series of insulating regions (T1, T2) around the perimeter of the second semiconductor region (R2), an intermediate semiconductor region (I1, I2) between each adjacent pair of nested insulating regions (T1, T2), and a voltage control device (12) comprising a conducting element (D1-D3) connected to at least one intermediate semiconductor region (I1, I2) in parallel with the at least one insulating region (T1, T2), so as to control a voltage across the at least one insulating region (T1, T2).
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: January 10, 2017
    Assignee: NXP B.V.
    Inventors: Joan Wichard Strijker, Inesz Marycka Emmerik-Weijland
  • Semiconductor light-emitting element
    Patent number: 11404606
    Abstract: A semiconductor light-emitting element is configured to emit ultraviolet light having a wavelength of 320 nm or shorter. Denoting a total area of a principal surface of a substrate as S0, an area on a p-type semiconductor layer in which a p-side contact electrode is formed as S1, an area on an n-type semiconductor layer in which an n-side contact electrode is formed as S2, a reflectivity of the p-side contact electrode for ultraviolet having a wavelength of 280 nm incident from a side of the p-type semiconductor layer as R1, and a reflectivity of the n-side contact electrode for ultraviolet light having a wavelength of 280 nm incident from a side of the n-type semiconductor layer as R2, (S1/S0)×R1+(S2/S0)×R2?0.5, S1>S2, and R1?R2.
    Type: Grant
    Filed: June 8, 2020
    Date of Patent: August 2, 2022
    Assignee: NIKKISO CO., LTD.
    Inventors: Tetsuhiko Inazu, Noritaka Niwa
  • SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    Publication number: 20200395506
    Abstract: A semiconductor light-emitting element is configured to emit ultraviolet light having a wavelength of 320 nm or shorter. Denoting a total area of a principal surface of a substrate as S0, an area on a p-type semiconductor layer in which a p-side contact electrode is formed as S1, an area on an n-type semiconductor layer in which an n-side contact electrode is formed as S2, a reflectivity of the p-side contact electrode for ultraviolet having a wavelength of 280 nm incident from a side of the p-type semiconductor layer as R1, and a reflectivity of the n-side contact electrode for ultraviolet light having a wavelength of 280 nm incident from a side of the n-type semiconductor layer as R2, (S1/S0)×R1+(S2/S0)×R2?0.5, S1>S2, and R1?R2.
    Type: Application
    Filed: June 8, 2020
    Publication date: December 17, 2020
    Inventors: Tetsuhiko INAZU, Noritaka NIWA
  • METHOD OF PRODUCING A SEMICONDUCTOR DEVICE
    Publication number: 20080153304
    Abstract: In a method of producing a semiconductor device, semiconductor burrs (74) are removed by dry etching using an etching gas in which a lateral-direction etch rate (R2) is greater than a depth-direction etch rate (R1) (that is, R1/R2 is smaller than 1) in a section of a groove (72) in a direction parallel to word lines.
    Type: Application
    Filed: December 13, 2007
    Publication date: June 26, 2008
    Applicant: ELPIDA MEMORY, INC.
    Inventor: Yasuhiko Ueda
  • Five-ring fused heteroaromatic compounds and conjugated polymers thereof
    Patent number: 8669343
    Abstract: Compounds having a core comprised of an aromatic ring and at least two annulated beta-substituted fused thiophene ring systems of the general formula: -(?-R2—FT2ArFT2-?-R2)—, and polymers or copolymers thereof, of the general formulas: -{-(?-R2—FT2ArFT2-?-R2)-G1-}n-, or -{-G1-(?-R2—FT2ArFT2-?-R2)-G1-G2-}n-, where ?-R2—FT2ArFT2-?-R2, -G1-, -G2-, and n are as defined herein. Also disclosed are compositions, articles, or devices comprising the polymers, and methods for making and using the polymers. The compositions, articles, or devices can be used, for example, for electronic applications, such as light emitting devices and semiconductor devices.
    Type: Grant
    Filed: February 11, 2013
    Date of Patent: March 11, 2014
    Assignee: Corning Incorporated
    Inventors: Mingqian He, Thomas Mark Leslie, Weijun Niu, Adama Tandia
  • FIVE-RING FUSED HETEROAROMATIC COMPOUNDS AND CONJUGATED POLYMERS THEREOF
    Publication number: 20130178599
    Abstract: Compounds having a core comprised of an aromatic ring and at least two annulated beta-substituted fused thiophene ring systems of the general formula: -(?-R2—FT2ArFT2-?-R2)—, and polymers or copolymers thereof, of the general formulas: -{-(?-R2—FT2ArFT2-?-R2)-G1-}n-, or -{-G1-(?-R2—FT2ArFT2-?-R2)-G1-G2-}n-, where ?-R2—FT2ArFT2-?-R2, -G1-, -G2-, and n are as defined herein. Also disclosed are compositions, articles, or devices comprising the polymers, and methods for making and using the polymers. The compositions, articles, or devices can be used, for example, for electronic applications, such as light emitting devices and semiconductor devices.
    Type: Application
    Filed: February 11, 2013
    Publication date: July 11, 2013
    Inventors: Mingqian He, Thomas Mark Leslie, Weijun Niu, Adama Tandia
  • Organic semiconductor material and semiconductor device
    Patent number: 7763884
    Abstract: An organic semiconductor material represented by the following general formula (1): wherein X1 to X4 each independently represent a chalcogen atom; and at least one of R1 and R2 represents a substituent for obtaining solubility, and R1 and R2 may be connected to each other to form a ring.
    Type: Grant
    Filed: June 27, 2007
    Date of Patent: July 27, 2010
    Assignee: Sony Corporation
    Inventors: Mao Tatsuhara, Akito Ugawa
  • FIVE-RING FUSED HETEROAROMATIC COMPOUNDS AND CONJUGATED POLYMERS THEREOF
    Publication number: 20120220748
    Abstract: Compounds having a core comprised of an aromatic ring and at least two annulated beta-substituted fused thiophene ring systems of the general formula: -(?-R2-FT2ArFT2-?-R2)-, and polymers or copolymers thereof, of the general formulas: -{-?-R2-FT2ArFT2-?-R2)-G1-}n-, or -{-G1-(?-R2-FT2ArFT2-?-R2)-G1-G2-}n-, where ?-R2-FT2ArFT2-?-R2, -G1-, -G2-, and n are as defined herein. Also disclosed are compositions, articles, or devices comprising the polymers, and methods for making and using the polymers. The compositions, articles, or devices can be used, for example, for electronic applications, such as light emitting devices and semiconductor devices.
    Type: Application
    Filed: February 28, 2011
    Publication date: August 30, 2012
    Inventors: Mingqian He, Thomas Mark Leslie, Weijun Niu, Adama Tandia
  • Five-ring fused heteroaromatic compounds and conjugated polymers thereof
    Patent number: 8394918
    Abstract: Compounds having a core comprised of an aromatic ring and at least two annulated beta-substituted fused thiophene ring systems of the general formula: -(?-R2—FT2ArFT2-?-R2)—, and polymers or copolymers thereof, of the general formulas: -{-?-R2—FT2ArFT2-?-R2)-G1-}n-, or -{-G1-(?-R2—FT2ArFT2-?-R2)-G1-G2-}n-, where ?-R2—FT2ArFT2-?-R2, -G1-, -G2-, and n are as defined herein. Also disclosed are compositions, articles, or devices comprising the polymers, and methods for making and using the polymers. The compositions, articles, or devices can be used, for example, for electronic applications, such as light emitting devices and semiconductor devices.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: March 12, 2013
    Assignee: Corning Incorporated
    Inventors: Mingqian He, Thomas Mark Leslie, Weijun Niu, Adama Tandia
  • Copper halide chalcogenide semiconductor compounds for photonic devices
    Patent number: 11508865
    Abstract: A semiconductor material having the molecular formula Cu2l2Se6 is provided. Also provided are solid solutions of semiconductor materials having the formulas Cu2lxBr2-xSeyTe6-y and Cu2lxBr2-xSeyS6-y, where 0?x?1 and 0?y?3. Methods and devices that use the semiconductor materials to convert incident radiation into an electric signal are also provided. The devices include optoelectronic and photonic devices, such as photodetectors, photodiodes, and photovoltaic cells.
    Type: Grant
    Filed: July 16, 2018
    Date of Patent: November 22, 2022
    Assignee: Northwestern University
    Inventors: Mercouri G. Kanatzidis, Wenwen Lin
  • COPPER HALIDE CHALCOGENIDE SEMICONDUCTOR COMPOUNDS FOR PHOTONIC DEVICES
    Publication number: 20200365753
    Abstract: A semiconductor material having the molecular formula Cu2l2Se6 is provided. Also provided are solid solutions of semiconductor materials having the formulas Cu2lxBr2-xSeyTe6-y and Cu2lxBr2-xSeyS6-y, where 0?x?1 and 0?y?3. Methods and devices that use the semiconductor materials to convert incident radiation into an electric signal are also provided. The devices include optoelectronic and photonic devices, such as photodetectors, photodiodes, and photovoltaic cells.
    Type: Application
    Filed: July 16, 2018
    Publication date: November 19, 2020
    Inventors: Mercouri G. Kanatzidis, Wenwen Lin
  • Semiconductor device and method for producing the same
    Patent number: 8004045
    Abstract: First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1? of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2? of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: August 23, 2011
    Assignee: Panasonic Corporation
    Inventors: Yuichiro Sasaki, Keiichi Nakamoto, Katsumi Okashita, Hisataka Kanada, Bunji Mizuno
  • SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
    Publication number: 20090289300
    Abstract: First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1? of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2? of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.
    Type: Application
    Filed: July 30, 2009
    Publication date: November 26, 2009
    Inventors: Yuichiro SASAKI, Keiichi Nakamoto, Katsumi Okashita, Hisataka Kanada, Bunji Mizuno
  • METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVE FIN-SHAPED SEMICONDUCTOR REGIONS
    Publication number: 20110275201
    Abstract: First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1? of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2? of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.
    Type: Application
    Filed: July 18, 2011
    Publication date: November 10, 2011
    Applicant: Panasonic Corporation
    Inventors: Yuichiro SASAKI, Keiichi Nakamoto, Katsumi Okashita, Hisataka Kanada, Bunji Mizuno
  • Method for producing a semiconductor device have fin-shaped semiconductor regions
    Patent number: 8536000
    Abstract: First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1? of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2? of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.
    Type: Grant
    Filed: July 18, 2011
    Date of Patent: September 17, 2013
    Assignee: Panasonic Corporation
    Inventors: Yuichiro Sasaki, Keiichi Nakamoto, Katsumi Okashita, Hisataka Kanada, Bunji Mizuno
  • ORGANIC SEMICONDUCTOR MATERIAL AND SEMICONDUCTOR DEVICE
    Publication number: 20080119009
    Abstract: An organic semiconductor material represented by the following general formula (1): wherein X1 to X4 each independently represent a chalcogen atom; and at least one of R1 and R2 represents a substituent for obtaining solubility, and R1 and R2 may be connected to each other to form a ring.
    Type: Application
    Filed: June 27, 2007
    Publication date: May 22, 2008
    Applicant: SONY CORPORATION
    Inventors: Mao Tatsuhara, Akito Ugawa
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