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Patent number: 8917067Abstract: Methods, apparatuses and systems for assisting an output current of a voltage converter, are disclosed. One method includes detecting a request for a positive change in an output voltage of the voltage converter, selecting an output current assist value based on the requested positive change in the output voltage, for a predetermined load, and assisting the output current with the selected output assist current.Type: GrantFiled: June 21, 2012Date of Patent: December 23, 2014Assignee: R2 Semiconductor, Inc.Inventors: Pablo Moreno Galbis, James E. C. Brown
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Patent number: 8395362Abstract: Embodiments for at least one method and apparatus of controlling a dead time of a switching voltage regulator are disclosed. One method includes generating a regulated output voltage based upon a switching voltage. The method included generating the switching voltage through controlled closing and opening of a series switch element and a shunt switch element, wherein the dead time comprises time that both the series switch element and the shunt switch element are open. The duration of the dead time is adjusted based on a rate of change of the switching voltage.Type: GrantFiled: October 29, 2010Date of Patent: March 12, 2013Assignee: R2 Semiconductor, Inc.Inventors: James E. C. Brown, Lawrence M. Burns
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Patent number: 8339115Abstract: Embodiments for at least one method and apparatus of controlling a bypass resistance of a voltage regulator are disclosed. One method includes generating a regulated output voltage based upon a switching voltage. The switching voltage is generated through controlled closing and opening of a series switch element and a shunt switch element, the series switch element and the shunt switch element being connected between voltages based on an input voltage. Control of a duty cycle of the switching voltage is provided by sensing and feeding back the regulated output voltage. The bypass resistance is controlled based on an integration of a difference between the duty cycle and a maximum duty cycle.Type: GrantFiled: July 5, 2012Date of Patent: December 25, 2012Assignee: R2 Semiconductor, Inc.Inventors: James E. C. Brown, Bret Rothenberg, Lawrence M. Burns
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Publication number: 20120229102Abstract: Another embodiment includes a voltage regulator. The voltage regulator includes a series switch element connected between a first voltage supply and a common node, the series switch element comprising an NMOS series switching transistor, a shunt switch element connected between the common node and a second voltage supply, the shunt switch element comprising an NMOS shunt switching transistor. The voltage regulator further includes means for closing the series switch element during a first period by applying a switching gate voltage to a gate of the NMOS series switch transistor of the series switch element, wherein the switching gate voltage has a voltage potential of at least a threshold voltage greater than a voltage potential of the common node, means for closing the shunt switch element during a second period, the shunt switch element comprising an NMOS shunt switching transistor.Type: ApplicationFiled: May 21, 2012Publication date: September 13, 2012Applicant: R2 SEMICONDUCTOR, INC.Inventors: Lawrence M. Burns, David Fisher
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Patent number: 8248044Abstract: Embodiments for at least one method and apparatus of controlling a bypass resistance of a voltage regulator are disclosed. One method includes generating a regulated output voltage based upon a switching voltage. The switching voltage is generated through controlled closing and opening of a series switch element and a shunt switch element, the series switch element and the shunt switch element being connected between voltages based on an input voltage. A control of a duty cycle of the switching voltage is provided by sensing and feeding back the regulated output voltage. The bypass resistance is controlled based on a parameter related to the duty cycle, wherein the control of the duty cycle is persistent during the control of the bypass resistance.Type: GrantFiled: March 24, 2010Date of Patent: August 21, 2012Assignee: R2 Semiconductor, Inc.Inventors: James E. C. Brown, Bret Rothenberg, Lawrence M. Burns
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Publication number: 20120326680Abstract: Embodiments for at least one method and apparatus of generating a regulated voltage are disclosed. One method includes generating the regulated voltage through controlled closing and opening of a series switch element and shunt switch element. This method includes closing the series switch element during a first period, the series switch element comprising a plurality of series switch elements segments. The method includes applying a switching gate voltage to gates of series switching transistors of a subset of the plurality of series switch elements segments of the series switch element, wherein only the series switching transistors of the subset of the plurality of series switch elements segments of the series switch element turn on, while series protection transistor of more than the subset of the plurality of series switch elements segments of the series switch element turn on. The shunt switch element during is closed during a second period.Type: ApplicationFiled: September 5, 2012Publication date: December 27, 2012Applicant: R2 SEMICONDUCTOR, INC.Inventors: Lawrence M. Burns, James E.C. Brown
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Patent number: 9035625Abstract: Embodiments for at least one method and apparatus of generating a regulated voltage are disclosed. One method includes generating the regulated voltage through controlled closing and opening of a series switch element and shunt switch element. This method includes closing the series switch element during a first period, the series switch element comprising a plurality of series switch elements segments. The method includes applying a switching gate voltage to gates of series switching transistors of a subset of the plurality of series switch elements segments of the series switch element, wherein only the series switching transistors of the subset of the plurality of series switch elements segments of the series switch element turn on, while series protection transistor of more than the subset of the plurality of series switch elements segments of the series switch element turn on. The shunt switch element during is closed during a second period.Type: GrantFiled: September 5, 2012Date of Patent: May 19, 2015Assignee: R2 SemiconductorInventors: Lawrence M. Burns, James E. C. Brown
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Patent number: 8593128Abstract: Another embodiment includes a voltage regulator. The voltage regulator includes a series switch element connected between a first voltage supply and a common node, the series switch element comprising an NMOS series switching transistor, a shunt switch element connected between the common node and a second voltage supply, the shunt switch element comprising an NMOS shunt switching transistor. The voltage regulator further includes means for closing the series switch element during a first period by applying a switching gate voltage to a gate of the NMOS series switch transistor of the series switch element, wherein the switching gate voltage has a voltage potential of at least a threshold voltage greater than a voltage potential of the common node, means for closing the shunt switch element during a second period, the shunt switch element comprising an NMOS shunt switching transistor.Type: GrantFiled: May 21, 2012Date of Patent: November 26, 2013Assignee: R2 Semiconductor, Inc.Inventors: Lawrence M. Burns, David Fisher
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Patent number: 8212536Abstract: Embodiments for at least one method and apparatus of generating a regulated voltage are disclosed. One method includes generating the regulated voltage though controlled closing and opening of a series switch element and shunt switch element, the series switch element being connected between a first voltage supply and a common node, and the shunt switch being connected between the common node and a second supply voltage. The series switch element includes an NMOS series switching transistor stacked with an NMOS series protection transistor, and closing the series switch element during a first period includes applying a switching gate voltage to a gate of the NMOS series switch transistor of the series switch element, wherein the switching gate voltage has a voltage potential of at least a threshold voltage greater than a voltage potential of the common node.Type: GrantFiled: December 23, 2009Date of Patent: July 3, 2012Assignee: R2 Semiconductor, Inc.Inventors: Lawrence M. Burns, David Fisher