Search Patents
  • Patent number: 8917067
    Abstract: Methods, apparatuses and systems for assisting an output current of a voltage converter, are disclosed. One method includes detecting a request for a positive change in an output voltage of the voltage converter, selecting an output current assist value based on the requested positive change in the output voltage, for a predetermined load, and assisting the output current with the selected output assist current.
    Type: Grant
    Filed: June 21, 2012
    Date of Patent: December 23, 2014
    Assignee: R2 Semiconductor, Inc.
    Inventors: Pablo Moreno Galbis, James E. C. Brown
  • Patent number: 8395362
    Abstract: Embodiments for at least one method and apparatus of controlling a dead time of a switching voltage regulator are disclosed. One method includes generating a regulated output voltage based upon a switching voltage. The method included generating the switching voltage through controlled closing and opening of a series switch element and a shunt switch element, wherein the dead time comprises time that both the series switch element and the shunt switch element are open. The duration of the dead time is adjusted based on a rate of change of the switching voltage.
    Type: Grant
    Filed: October 29, 2010
    Date of Patent: March 12, 2013
    Assignee: R2 Semiconductor, Inc.
    Inventors: James E. C. Brown, Lawrence M. Burns
  • Patent number: 8339115
    Abstract: Embodiments for at least one method and apparatus of controlling a bypass resistance of a voltage regulator are disclosed. One method includes generating a regulated output voltage based upon a switching voltage. The switching voltage is generated through controlled closing and opening of a series switch element and a shunt switch element, the series switch element and the shunt switch element being connected between voltages based on an input voltage. Control of a duty cycle of the switching voltage is provided by sensing and feeding back the regulated output voltage. The bypass resistance is controlled based on an integration of a difference between the duty cycle and a maximum duty cycle.
    Type: Grant
    Filed: July 5, 2012
    Date of Patent: December 25, 2012
    Assignee: R2 Semiconductor, Inc.
    Inventors: James E. C. Brown, Bret Rothenberg, Lawrence M. Burns
  • Publication number: 20120229102
    Abstract: Another embodiment includes a voltage regulator. The voltage regulator includes a series switch element connected between a first voltage supply and a common node, the series switch element comprising an NMOS series switching transistor, a shunt switch element connected between the common node and a second voltage supply, the shunt switch element comprising an NMOS shunt switching transistor. The voltage regulator further includes means for closing the series switch element during a first period by applying a switching gate voltage to a gate of the NMOS series switch transistor of the series switch element, wherein the switching gate voltage has a voltage potential of at least a threshold voltage greater than a voltage potential of the common node, means for closing the shunt switch element during a second period, the shunt switch element comprising an NMOS shunt switching transistor.
    Type: Application
    Filed: May 21, 2012
    Publication date: September 13, 2012
    Applicant: R2 SEMICONDUCTOR, INC.
    Inventors: Lawrence M. Burns, David Fisher
  • Patent number: 8248044
    Abstract: Embodiments for at least one method and apparatus of controlling a bypass resistance of a voltage regulator are disclosed. One method includes generating a regulated output voltage based upon a switching voltage. The switching voltage is generated through controlled closing and opening of a series switch element and a shunt switch element, the series switch element and the shunt switch element being connected between voltages based on an input voltage. A control of a duty cycle of the switching voltage is provided by sensing and feeding back the regulated output voltage. The bypass resistance is controlled based on a parameter related to the duty cycle, wherein the control of the duty cycle is persistent during the control of the bypass resistance.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: August 21, 2012
    Assignee: R2 Semiconductor, Inc.
    Inventors: James E. C. Brown, Bret Rothenberg, Lawrence M. Burns
  • Publication number: 20120326680
    Abstract: Embodiments for at least one method and apparatus of generating a regulated voltage are disclosed. One method includes generating the regulated voltage through controlled closing and opening of a series switch element and shunt switch element. This method includes closing the series switch element during a first period, the series switch element comprising a plurality of series switch elements segments. The method includes applying a switching gate voltage to gates of series switching transistors of a subset of the plurality of series switch elements segments of the series switch element, wherein only the series switching transistors of the subset of the plurality of series switch elements segments of the series switch element turn on, while series protection transistor of more than the subset of the plurality of series switch elements segments of the series switch element turn on. The shunt switch element during is closed during a second period.
    Type: Application
    Filed: September 5, 2012
    Publication date: December 27, 2012
    Applicant: R2 SEMICONDUCTOR, INC.
    Inventors: Lawrence M. Burns, James E.C. Brown
  • Patent number: 9035625
    Abstract: Embodiments for at least one method and apparatus of generating a regulated voltage are disclosed. One method includes generating the regulated voltage through controlled closing and opening of a series switch element and shunt switch element. This method includes closing the series switch element during a first period, the series switch element comprising a plurality of series switch elements segments. The method includes applying a switching gate voltage to gates of series switching transistors of a subset of the plurality of series switch elements segments of the series switch element, wherein only the series switching transistors of the subset of the plurality of series switch elements segments of the series switch element turn on, while series protection transistor of more than the subset of the plurality of series switch elements segments of the series switch element turn on. The shunt switch element during is closed during a second period.
    Type: Grant
    Filed: September 5, 2012
    Date of Patent: May 19, 2015
    Assignee: R2 Semiconductor
    Inventors: Lawrence M. Burns, James E. C. Brown
  • Patent number: 8593128
    Abstract: Another embodiment includes a voltage regulator. The voltage regulator includes a series switch element connected between a first voltage supply and a common node, the series switch element comprising an NMOS series switching transistor, a shunt switch element connected between the common node and a second voltage supply, the shunt switch element comprising an NMOS shunt switching transistor. The voltage regulator further includes means for closing the series switch element during a first period by applying a switching gate voltage to a gate of the NMOS series switch transistor of the series switch element, wherein the switching gate voltage has a voltage potential of at least a threshold voltage greater than a voltage potential of the common node, means for closing the shunt switch element during a second period, the shunt switch element comprising an NMOS shunt switching transistor.
    Type: Grant
    Filed: May 21, 2012
    Date of Patent: November 26, 2013
    Assignee: R2 Semiconductor, Inc.
    Inventors: Lawrence M. Burns, David Fisher
  • Patent number: 8212536
    Abstract: Embodiments for at least one method and apparatus of generating a regulated voltage are disclosed. One method includes generating the regulated voltage though controlled closing and opening of a series switch element and shunt switch element, the series switch element being connected between a first voltage supply and a common node, and the shunt switch being connected between the common node and a second supply voltage. The series switch element includes an NMOS series switching transistor stacked with an NMOS series protection transistor, and closing the series switch element during a first period includes applying a switching gate voltage to a gate of the NMOS series switch transistor of the series switch element, wherein the switching gate voltage has a voltage potential of at least a threshold voltage greater than a voltage potential of the common node.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: July 3, 2012
    Assignee: R2 Semiconductor, Inc.
    Inventors: Lawrence M. Burns, David Fisher