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  • METHOD FOR PRODUCTION OF ZINC OXIDE SINGLE CRYSTALS
    Publication number: 20120086001
    Abstract: The disclosed subject matter includes a method of producing zinc oxide (ZnO) single crystals in an enclosure. The ZnO single crystals have a low concentration of lithium and hydrogen impurities.
    Type: Application
    Filed: October 4, 2011
    Publication date: April 12, 2012
    Applicant: FAIRFIELD CRYSTAL TECHNOLOGY, LLC
    Inventor: Shaoping WANG
  • Method for production of zinc oxide single crystals
    Patent number: 8557628
    Abstract: The disclosed subject matter includes a method of producing zinc oxide (ZnO) single crystals in an enclosure. The ZnO single crystals have a low concentration of lithium and hydrogen impurities.
    Type: Grant
    Filed: October 4, 2011
    Date of Patent: October 15, 2013
    Assignee: Fairfield Crystal Technology, LLC
    Inventor: Shaoping Wang
  • Zinc sulfide crystals for optical components
    Patent number: 8071466
    Abstract: Zinc sulfide (ZnS) single crystals and multi-grain ZnS crystals are suitable for many applications. The disclosed method produces ZnS single crystals or multi-grain ZnS crystals. More specifically, ZnS single crystals or multi-grain ZnS crystals of pure or substantially pure hexagonal wurtzite structure with sufficiently high purity and crystalline perfection to be used to fabricate components and devices including but not limited to optical components (useful in the infrared (IR) & visible spectrum range of 0.34-14 ?m), photoluminescence devices, cathode luminescence devices, electroluminescence devices, semiconductor devices, and IR laser gain mediums (in the wave length range of 1-5 ?m).
    Type: Grant
    Filed: December 18, 2008
    Date of Patent: December 6, 2011
    Assignee: Fairfield Crystal Technology, LLC
    Inventor: Shaoping Wang
  • Method and apparatus for zinc oxide single crystal boule growth
    Patent number: 7279040
    Abstract: There is provided a method for growing one or more single crystal ZnO boules within a physical vapor transport furnace system. This method includes the steps of: (a.) placing a source material at a first end of an interior crucible enclosure and placing one or more seed crystals at an opposing second end of the interior crucible enclosure with the seed crystal and the source material separated by a predetermined distance; (b.) heating the crucible, the one or more seed crystals and the source material to predetermined temperatures in such way that the temperature of the source material is higher than the temperature of the seed crystal; (c.) maintaining a pressure within the interior crucible enclosure through flowing a gas mixture; and (d) maintaining a temperature distribution within the crucible enclosure thereby causing a ZnO boule growth on each one of the one or more seed crystals. The ZnO may be doped with desired additional elements.
    Type: Grant
    Filed: May 22, 2006
    Date of Patent: October 9, 2007
    Assignee: Fairfield Crystal Technology, LLC
    Inventor: Shaoping Wang
  • COMPOSITE WAFERS AND SUBSTRATES FOR III-NITRIDE EPITAXY AND DEVICES AND METHODS THEREFOR
    Publication number: 20110101502
    Abstract: A composite wafer comprises a single crystal substrate having first and second sides; a first III-nitride single crystal layer disposed on the first side of the substrate and being defined by a thickness; and a second III-nitride single crystal layer disposed on the second side of the single crystal substrate and being defined by a thickness. The thickness of each III-nitride single crystal layer is substantially the same. The composite wafer may be used in the manufacture of a semiconductor device or a freestanding wafer.
    Type: Application
    Filed: November 2, 2010
    Publication date: May 5, 2011
    Applicant: Fairfield Crystal Technology, LLC
    Inventor: Shaoping Wang
  • ZINC SULFIDE SUBSTRATES FOR GROUP III-NITRIDE EPITAXY AND GROUP III-NITRIDE DEVICES
    Publication number: 20100084664
    Abstract: A semiconductor structure includes a substrate which may be formed from a ZnS single crystal of wurtzite (2H) structure with a predetermined crystal orientation, and which has a first surface and a second surface. The structure includes a layer of a group III-nitride crystalline material deposited as an epitaxial layer on the first surface of the substrate. In one embodiment, the group III-nitride deposit is epitaxially grown using a MOCVD (or MOVPE) technique or a HVPE technique or a combination thereof. There may be a mask and/or a buffer layer on the first surface and/or a protective layer on the second surface.
    Type: Application
    Filed: October 6, 2009
    Publication date: April 8, 2010
    Applicant: FAIRFIELD CRYSTAL TECHNOLOGY, LLC
    Inventor: Shaoping Wang
  • Zinc sulfide substrates for group III-nitride epitaxy and group III-nitride devices
    Patent number: 8143630
    Abstract: A semiconductor structure includes a substrate which may be formed from a ZnS single crystal of wurtzite (2H) structure with a predetermined crystal orientation, and which has a first surface and a second surface. The structure includes a layer of a group III-nitride crystalline material deposited as an epitaxial layer on the first surface of the substrate. In one embodiment, the group III-nitride deposit is epitaxially grown using a MOCVD (or MOVPE) technique or a HVPE technique or a combination thereof. There may be a mask and/or a buffer layer on the first surface and/or a protective layer on the second surface.
    Type: Grant
    Filed: October 6, 2009
    Date of Patent: March 27, 2012
    Assignee: Fairfield Crystal Technology, LLC
    Inventor: Shaoping Wang
  • Method and apparatus for aluminum nitride monocrystal boule growth
    Patent number: 7524376
    Abstract: A crystal growth setup within a physical vapor transport growth furnace system for producing AlN monocrystal boules at high temperatures includes a crucible effective to contain an AlN source material and a growing AlN crystal boule. This crucible has a thin wall thickness in at least that portion housing the growing AlN crystal boule. Other components include a susceptor, in case of an inductive heating, or a heater, in case of a resistive heating, a thermal insulation enclosing the susceptor or heater effective to provide a thermal gradient inside the crucible in the range of 5-100° C./cm and a furnace chamber capable of being operated from a vacuum (<0.1 torr) to a gas pressure of at least 4000 torr through filling or flowing a nitrogen gas or a mixture of nitrogen gas and argon gas. The high temperatures contribute to a high boule growth rate and the thin wall thickness contributes to reduced imparted stress during boule removal.
    Type: Grant
    Filed: April 25, 2007
    Date of Patent: April 28, 2009
    Assignee: Fairfield Crystal Technology, LLC
    Inventor: Shaoping Wang
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