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  • Method for production of zinc oxide single crystals
    Patent number: 8557628
    Abstract: The disclosed subject matter includes a method of producing zinc oxide (ZnO) single crystals in an enclosure. The ZnO single crystals have a low concentration of lithium and hydrogen impurities.
    Type: Grant
    Filed: October 4, 2011
    Date of Patent: October 15, 2013
    Assignee: Fairfield Crystal Technology, LLC
    Inventor: Shaoping Wang