Abstract: There is provided a method for growing one or more single crystal ZnO boules within a physical vapor transport furnace system. This method includes the steps of: (a.) placing a source material at a first end of an interior crucible enclosure and placing one or more seed crystals at an opposing second end of the interior crucible enclosure with the seed crystal and the source material separated by a predetermined distance; (b.) heating the crucible, the one or more seed crystals and the source material to predetermined temperatures in such way that the temperature of the source material is higher than the temperature of the seed crystal; (c.) maintaining a pressure within the interior crucible enclosure through flowing a gas mixture; and (d) maintaining a temperature distribution within the crucible enclosure thereby causing a ZnO boule growth on each one of the one or more seed crystals. The ZnO may be doped with desired additional elements.