Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure disposed under an insulating layer having a plurality of holes. A first electrode is disposed on the insulating layer and a second electrode disposed is disposed under the light emitting structure. A conductive supporting member is disposed under the second electrode. The plurality of contact protrusions are disposed in the holes of the insulating layer and include filler connected to the first conductive semiconductor layer and disposed in the plurality of holes. The conductive supporting member physically contacts with the second electrode and has a thickness thicker than that of the insulating layer. The first electrode is located at a higher position than an entire region of the insulating layer and the insulating layer is located at a higher position than an entire region of the light emitting structure.
Abstract: Disclosed are a shielding apparatus and a wireless power transmission apparatus. The shielding apparatus included in a wireless power transmission apparatus for transmitting power to a wireless power reception apparatus in wireless includes a first shielding unit changing a transmission path of a portion of a magnetic field generated from a transmission coil of the wireless power transmission apparatus, and a second shielding unit shielding the portion of the magnetic field which has passed through the first shielding unit. The second shielding unit is placed on the first shielding unit. A real component value of permeability of the first shielding unit is greater than an imaginary component value of the permeability of the first shielding unit, and an imaginary component value of permeability of the second shielding unit is greater than a real component value of the permeability of the second shielding unit.
Abstract: A semiconductor light emitting device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active layer on the second semiconductor layer; a third semiconductor layer on the active layer; and a fourth semiconductor layer on the third semiconductor layer, wherein the first semiconductor layer has a composition equation of AlY(GaxIn1-x)1-YN(0?X,Y?1), wherein the third semiconductor layer has a composition equation of AlY(GaxIn1-x)1-YN(0?X,Y?1), wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers having a material different from the quantum barrier layers, wherein the plurality of quantum well layers include an AlGaN based semiconductor layer, wherein the plurality of quantum barrier layers has a larger band gap energy than that of the quantum well layers.
Abstract: Disclosed is a light emitting device including: a light emitting structure including a plurality of light emitting regions including a first semiconductor layer, an active layer and a second semiconductor layer; a first electrode unit disposed on the first semiconductor layer in one of the light emitting regions; a second electrode unit disposed on the second semiconductor layer in another of the light emitting regions; an intermediate pad disposed on the second semiconductor layer in at least still another of the light emitting regions; and at least one connection electrode to sequentially connect the light emitting regions in series, wherein the light emitting regions connected in series are divided into 1st to ith light emitting region groups and areas of light emitting regions that belong to different groups are different (where 1<i?j, each of i and j is a natural number, and j is a last light emitting region group).
Abstract: Disclosed is a method for controlling a lighting apparatus comprising a first light source unit, a second light source unit and a third light source unit, all of which emit lights having mutually different color temperatures and mutually different color coordinates, the method comprising: outputting an R component signal, a G component signal and a B component signal, each of which respectively corresponds to light quantities of an R component, a G component and a B component of lights outputted from the first light source unit, the second light source unit and the third light source unit; receiving the R component signal, the G component signal and the B component signal and generating a comparative color coordinate; and comparing the comparative color coordinate with standard color coordinates located within an area formed by the respective color coordinates of the first, the second and the third light source units, and controlling light quantities of the first, the second and the third light source units i
Abstract: Disclosed is a light emitting diode display device in which a time taken in a process of connecting a light emitting device to a pixel circuit is shortened. The light emitting diode display device includes a thin film transistor (TFT) array substrate including a concave portion and a light emitting device disposed in the concave portion. The light emitting device includes a first electrode and a second electrode. The light emitting device further includes a first portion, including the first and second electrodes, and a second portion opposite to the first portion, and a distance between the first portion to a floor surface of the concave portion is greater than a distance between the second portion to the floor surface of the concave portion.
Type:
Application
Filed:
October 30, 2017
Publication date:
May 3, 2018
Applicants:
LG Display Co., Ltd., LG INNOTEK Co., Ltd., LG Electronics Inc.
Abstract: Disclosed is a light emitting diode display device in which a time taken in a process of connecting a light emitting device to a pixel circuit is shortened. The light emitting diode display device includes a thin film transistor (TFT) array substrate including a concave portion and a light emitting device disposed in the concave portion. The light emitting device includes a first electrode and a second electrode. The light emitting device further includes a first portion, including the first and second electrodes, and a second portion opposite to the first portion, and a distance between the first portion to a floor surface of the concave portion is greater than a distance between the second portion to the floor surface of the concave portion.
Type:
Grant
Filed:
October 30, 2017
Date of Patent:
June 18, 2019
Assignees:
LG DISPLAY CO., LTD., LG INNOTEK CO., LTD., LG ELECTRONICS INC.
Abstract: Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum.
Type:
Grant
Filed:
January 7, 2013
Date of Patent:
August 4, 2015
Assignees:
LG INNOTEK CO., LTD., TAMURA CORPORATION, KOHA CO., LTD.
Abstract: Provided is a glass composition for a ceramic phosphor plate, including: 75 to 85 mol % of an oxide mixture composed of SiO2, B2O3 and ZnO; 10 to 15 mol % of at least one carbonate compound including an alkali metal; and 1 to 5 mol % of Al2O3, wherein a content of B2O3 is less than 25 mol %.
Abstract: A method for manufacturing a nanowire is provided. A solvent is heated. A catalyst is added to the solvent. A metal compound is added to the solvent to form a metal nanowire. The metal nanowire is refined. In the refining of the metal nanowire, the catalyst and a refinement material to converting an insoluble material generated by the catalyst into a soluble material may be added to the solvent. The catalyst may include NaCl and at least one selected from the group consisting of Mg, K, Zn, Fe, se, Mn, P, Br and I.
Type:
Application
Filed:
December 14, 2011
Publication date:
February 27, 2014
Applicants:
NANOPYXIS CO., LTD., LG INNOTEK CO., LTD.
Inventors:
Jong Woon Moon, Woo Ju Jeong, Joon Rak Choi, Soung Kyu Park, Won Jong Choi, Sang Hoon Lee, Yong Sang Lee, Hyeok Soo Seo
Abstract: A photoluminescent sheet is disclosed. A photoluminescent sheet that includes a matrix resin layer, which is a thermosetting resin; a phosphor, which is included in the matrix resin layer and which converts the wavelength of light emitted from a blue LED; a curing agent, which is included in the matrix resin layer and which cures liquid thermosetting resin; and an additive, which is included in the matrix resin layer and which disperses the phosphor uniformly within the matrix resin layer, can implement white light from light having wavelengths corresponding to blue color.
Type:
Grant
Filed:
October 26, 2006
Date of Patent:
August 7, 2012
Assignees:
LG Innotek Co., Ltd., KDT Co., Ltd.
Inventors:
Choong-Yong Sohn, Young-Joo Ahn, Young-Wook Ko
Abstract: A method for manufacturing a nanowire is provided. A solvent is heated. A catalyst is added to the solvent. A metal compound is added to the solvent to form a metal nanowire. The metal nanowire is refined. In the refining of the metal nanowire, the catalyst and a refinement material to converting an insoluble material generated by the catalyst into a soluble material may be added to the solvent. The catalyst may include NaCl and at least one selected from the group consisting of Mg, K, Zn, Fe, se, Mn, P, Br and I.
Type:
Grant
Filed:
December 14, 2011
Date of Patent:
December 27, 2016
Assignees:
LG INNOTEK CO., LTD., NANOPYXIS CO., LTD.
Inventors:
Jong Woon Moon, Woo Ju Jeong, Joon Rak Choi, Soung Kyu Park, Won Jong Choi, Sang Hoon Lee, Yong Sang Lee, Hyeok Soo Seo
Abstract: Disclosed are a wire and a method for manufacturing the same. The method includes heating a solvent, adding a capping agent to the solvent, and forming a metallic wire by adding a metallic compound to the solvent. The solvent includes a first solvent having a first reduction power and a second solvent having a second reduction power greater than the first reduction power. The capping agent includes a first capping agent containing a polymer having a first molecular weight, and a second capping agent containing a polymer having a second molecular weight greater than the first molecular weight.
Type:
Grant
Filed:
July 25, 2012
Date of Patent:
May 1, 2018
Assignees:
LG INNOTEK CO., LTD., NANOPYXIS CO., LTD.
Inventors:
Joon Rak Choi, Jong Woon Moon, Young Sun You, Yong Sang Cho, Kyoung Hoon Chai, Hyeok Soo Suh, Sang Hoon Lee, Yong Sang Lee, Won Jong Choi
Abstract: Disclosed are a wire and a method for manufacturing the same. The method includes heating a solvent, adding a capping agent to the solvent, and forming a metallic wire by adding a metallic compound to the solvent. The solvent includes a first solvent having a first reduction power and a second solvent having a second reduction power greater than the first reduction power. The capping agent includes a first capping agent containing a polymer having a first molecular weight, and a second capping agent containing a polymer having a second molecular weight greater than the first molecular weight.
Type:
Application
Filed:
July 25, 2012
Publication date:
February 19, 2015
Applicants:
NANOPYXIS CO., LTD., LG INNOTEK CO., LTD.
Inventors:
Joon Rak Choi, Jong Woon Moon, Young Sun You, Yong Sang Cho, Kyoung Hoon Chai, Hyeok Soo Suh, Sang Hoon Lee, Yong Sang Lee, Won Jong Choi
Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
Type:
Application
Filed:
May 7, 2007
Publication date:
November 8, 2007
Applicants:
LG Electronics Inc., LG INNOTEK CO., LTD.
Abstract: The present invention relates to a light emitting device package and a method for manufacturing the same. The present invention has advantages in that a light emitting device is electrically connected to other devices without use of wire bonding, thereby saving a space for wire bonding and reducing the size of a package.
Type:
Application
Filed:
May 16, 2006
Publication date:
November 23, 2006
Applicants:
LG Electronics Inc., LG Innotek CO., Ltd.
Abstract: A nitride-based light emitting device capable of achieving an enhancement in light emission efficiency and an enhancement in reliability is disclosed. The nitride-based light emitting device includes a light emitting layer including a quantum well layer and a quantum barrier layer, and a stress accommodating layer arranged on at least one surface of the quantum well layer of the light emitting layer.
Type:
Application
Filed:
May 26, 2011
Publication date:
September 22, 2011
Applicants:
LG Electronics Inc., LG Innotek Co., Ltd.
Abstract: A lens and a light emitting device package formed by introducing surface mount technology (SMT) are disclosed. The lens includes a refractive portion which refracts incident light, and at least one surface mount portion, wherein a portion of the surface mount portion is formed in the refractive portion.
Type:
Application
Filed:
September 25, 2007
Publication date:
April 17, 2008
Applicants:
LG ELECTRONICS INC., LG INNOTEK CO., LTD
Abstract: A light emitting device having a vertical structure, which includes a semiconductor layer having a first surface and a second surface, a first electrode arranged on the first surface of the semiconductor layer, a transparent conductive oxide (TCO) layer arranged on the second surface of the semiconductor layer and a second electrode arranged on the TCO layer.
Type:
Application
Filed:
February 16, 2007
Publication date:
November 1, 2007
Applicants:
LG Electronics Inc., LG INNOTEK CO., LTD.
Abstract: A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.
Type:
Application
Filed:
September 4, 2013
Publication date:
January 23, 2014
Applicants:
LG INNOTEK CO., LTD., LG ELECTRONICS INC.