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  • LEARNING-TYPE SIGNAL SEPARATION METHOD AND LEARNING-TYPE SIGNAL SEPARATION DEVICE
    Publication number: 20200050937
    Abstract: A learning-type signal separation method performed using a model formulation unit, which performs learning processing based on a training-use signal including a specific component, and a training-use signal not including the specific component, the training-use signals including a common characteristic. The learning-type signal separation method includes: generating learned data by causing the model formulation unit to perform learning processing based on the training-use signal and information indicating whether or not the specific component is included in the training-use signal, to generate a data series signal in which the specific component has been separated and removed from a data series of the training-use signal; acquiring an arbitrary signal including the common characteristic; and generating, based on the acquired arbitrary signal and the generated learned data, a data series signal in which the specific component has been separated and removed from a data series of the arbitrary signal.
    Type: Application
    Filed: April 23, 2018
    Publication date: February 13, 2020
    Applicant: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    Inventors: Hisashi KURASAWA, Takayuki OGASAWARA, Masumi YAMAGUCHI, Shingo TSUKADA, Hiroshi NAKASHIMA, Takahiro HATA, Nobuhiko MATSUURA
  • Learning-type signal separation method and learning-type signal separation device
    Patent number: 11625603
    Abstract: A learning-type signal separation method performed using a model formulation unit, which performs learning processing based on a training-use signal including a specific component, and a training-use signal not including the specific component, the training-use signals including a common characteristic. The learning-type signal separation method includes: generating learned data by causing the model formulation unit to perform learning processing based on the training-use signal and information indicating whether or not the specific component is included in the training-use signal, to generate a data series signal in which the specific component has been separated and removed from a data series of the training-use signal; acquiring an arbitrary signal including the common characteristic; and generating, based on the acquired arbitrary signal and the generated learned data, a data series signal in which the specific component has been separated and removed from a data series of the arbitrary signal.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: April 11, 2023
    Assignee: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    Inventors: Hisashi Kurasawa, Takayuki Ogasawara, Masumi Yamaguchi, Shingo Tsukada, Hiroshi Nakashima, Takahiro Hata, Nobuhiko Matsuura
  • Nitride-based semiconductor element and method of forming nitride-based semiconductor
    Publication number: 20050263778
    Abstract: A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth.
    Type: Application
    Filed: August 3, 2005
    Publication date: December 1, 2005
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Masayuki Hata, Tatsuya Kunisato, Nobuhiko Hayashi
  • Nitride-based semiconductor element and method of forming nitride-based semiconductor
    Patent number: 7829900
    Abstract: A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth.
    Type: Grant
    Filed: February 28, 2008
    Date of Patent: November 9, 2010
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Masayuki Hata, Tatsuya Kunisato, Nobuhiko Hayashi
  • Nitride-based semiconductor element and method of forming nitride-based semiconductor
    Publication number: 20020117104
    Abstract: A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth.
    Type: Application
    Filed: February 25, 2002
    Publication date: August 29, 2002
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Masayuki Hata, Tatsuya Kunisato, Nobuhiko Hayashi
  • Nitride-based semiconductor element and method of forming nitride-based semiconductor
    Publication number: 20080224151
    Abstract: A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth.
    Type: Application
    Filed: February 28, 2008
    Publication date: September 18, 2008
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Masayuki Hata, Tatsuya Kunisato, Nobuhiko Hayashi
  • Nitride-based semiconductor element and method of forming nitride-based semiconductor
    Patent number: 6994751
    Abstract: A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth.
    Type: Grant
    Filed: February 25, 2002
    Date of Patent: February 7, 2006
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Masayuki Hata, Tatsuya Kunisato, Nobuhiko Hayashi
  • Nitride-based semiconductor element and method of forming nitride-based semiconductor
    Patent number: 7355208
    Abstract: A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth.
    Type: Grant
    Filed: August 3, 2005
    Date of Patent: April 8, 2008
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Masayuki Hata, Tatsuya Kunisato, Nobuhiko Hayashi
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