Abstract: The present disclosure provides methods and kits for diagnosing and assessing SAGE1-positive disorders, and compositions and methods for treating SAGE1-positive disorders. The present disclosure further provides SAGE1 complexes and methods and composition for inhibiting SAGE1 complexes and treating SAGE1-positive disorders.
Type:
Application
Filed:
December 14, 2020
Publication date:
February 2, 2023
Applicants:
SHANGHAI NINTH PEOPLE'S HOSPITAL, SHANGHAI JIAO TONG UNIVERSITY SCHOOL OF MEDICINE, SHANGHAI JIAOTONG UNIVERSITY SCHOOL OF MEDICINE
Inventors:
Ming LEI, Wei DENG, Yanjie ZHANG, Yang SONG, Chao ZHENG
Abstract: A sage candle system suitable for use as a sage candle is provided. The system includes a longitudinal wick. The system also includes aggregate material configured for use as a candle arranged in a cylindrical fashion around the longitudinal wick. Additionally, the system includes an external covering material designed to cover an exterior surface of the aggregate material; and external strapping material positionable on an exterior surface of the covering material and structured to provide an opening on a top end of the sage candle system to allow igniting a top end of the longitudinal wick and wherein the external strapping material provides for structural support of the sage candle system during burning evolutions such that a functional integrity of the sage candle system is maintained during the burning evolutions and wherein the external strapping material provides for cinching a bottom end of the sage candle.
Abstract: Self-aligned gate endcap (SAGE) architectures having vertical transistors with SAGE gate structures, and methods of fabricating SAGE architectures having vertical transistors with SAGE gate structures, are described. In an example, an integrated circuit structure includes a first semiconductor fin having first fin sidewall spacers, and a second semiconductor fin having second fin sidewall spacers. A gate endcap structure is between the first and second semiconductor fins and laterally between and in contact with adjacent ones of the first and second fin sidewall spacers, the gate endcap structure including a gate electrode and a gate dielectric. A first source or drain contact is electrically coupled to the first semiconductor fin. A second source or drain contact is electrically coupled to the second semiconductor fin.
Type:
Application
Filed:
June 27, 2019
Publication date:
December 31, 2020
Inventors:
Walid M. HAFEZ, Sairam SUBRAMANIAN, Chia-Hong JAN
Abstract: Novel tools and techniques are provided for implementing service diagnostics and provisioning via a service action guidance engine (“SAGE”). In various embodiments, SAGE may autonomously analyze data to identify any issues with provisioning one or more first services, among a plurality of services, to a first customer of a service provider. SAGE may autonomously identify one or more first automation actions from a plurality of automation actions to address at least one first issue identified based on the analysis, and may autonomously send one or more first instructions to one or more first automation bots, among a plurality of automation bots, to perform the identified one or more first automation actions. SAGE may also generate and present one or more guidance messages to call center users to guide interaction between customers and the call center users, based on analysis data associated with provisioning of services to the customers.
Abstract: Novel tools and techniques are provided for implementing service diagnostics and provisioning via a service action guidance engine (“SAGE”). In various embodiments, SAGE may autonomously analyze data to identify any issues with provisioning one or more first services, among a plurality of services, to a first customer of a service provider. SAGE may autonomously identify one or more first automation actions from a plurality of automation actions to address at least one first issue identified based on the analysis, and may autonomously send one or more first instructions to one or more first automation bots, among a plurality of automation bots, to perform the identified one or more first automation actions. SAGE may also generate and present one or more guidance messages to call center users to guide interaction between customers and the call center users, based on analysis data associated with provisioning of services to the customers.
Abstract: Novel tools and techniques are provided for implementing service diagnostics and provisioning via a service action guidance engine (“SAGE”). In various embodiments, SAGE may autonomously analyze data to identify any issues with provisioning one or more first services, among a plurality of services, to a first customer of a service provider. SAGE may autonomously identify one or more first automation actions from a plurality of automation actions to address at least one first issue identified based on the analysis, and may autonomously send one or more first instructions to one or more first automation bots, among a plurality of automation bots, to perform the identified one or more first automation actions. SAGE may also generate and present one or more guidance messages to call center users to guide interaction between customers and the call center users, based on analysis data associated with provisioning of services to the customers.
Abstract: The present invention refers to a sage extract containing a mixture of tricyclic diterpene (derivative)s of the formulae I to III, preferably to a sage extract containing a mixture of tricyclic diterpene (derivative)s of the formulae I to IV, more preferably to a sage extract containing a mixture of tricyclic diterpene (derivative)s of the formulae I to V, for use as medicaments for the treatment of a disorder connected to reduced neurotransmission, as well as to dietary and pharmaceutical compositions and their uses.
Type:
Application
Filed:
November 22, 2007
Publication date:
December 16, 2010
Inventors:
Ann Fowler, Claus Kilpert, Goede Schueler, Christof Wehrli, Adrian Wyss
Abstract: The present disclosure encompasses solid state forms of SAGE-217, in embodiments SAGE-217:Oxalic acid Co-crystal, processes for preparation thereof, and pharmaceutical compositions thereof.
Abstract: The present invention refers to a sage extract containing a mixture of tricyclic diterpene (derivative)s of the formulae I to III, preferably to a sage extract containing a mixture of tricyclic diterpene (derivative)s of the formulae I to IV, more preferably to a sage extract containing a mixture of tricyclic diterpene (derivative)s of the formulae I to V, for use as medicaments for the treatment of a disorder connected to reduced neurotransmission, as well as to dietary and pharmaceutical compositions and their uses.
Type:
Application
Filed:
February 6, 2012
Publication date:
June 14, 2012
Applicant:
DSM IP ASSETS B.V.
Inventors:
Ann FOWLER, Claus KILPERT, Goede SCHUELER, Christof WEHRLI, Adrian WYSS
Abstract: Generation of longer cDNA fragments from SAGE tags for gene identification (GLGI) is disclosed. This method converts SAGE tags, which are about 10 base pairs in length, into their corresponding 3′ cDNA fragments covering hundred bases. This added information provides for more accurate genome-wide analysis and overcomes the inherent deficiencies of SAGE. The generation of longer cDNA fragments from isolated and purified protein fragments for gene identification is also disclosed. This method converts a short amino acid sequence into extended versions of the DNA sequences encoding the protein/protein fragment and additional 3′ end sequences of the gene encoding the protein. This additional sequence information allows gene identification from purified protein sequences. The invention also provides a high-throughput GLGI procedure for identifying genes corresponding to a set of unidentified SAGE tags.
Type:
Application
Filed:
December 22, 2000
Publication date:
June 5, 2003
Applicant:
ARCH DEVELOPMENT CORPORATION
Inventors:
San Ming Wang, Jian-Jun Chen, Janet D. Rowley
Abstract: The present invention relates to the use of certain novel compositions from clary sage (Salvia sclarea) which are inhibitors of nuclear factor kappa B (NF-?B), oxidative stress (activation of Nerf2) and the activity of the endothelin receptor. In particular, it relates to useful enriched fractions and pharmaceutical compositions from clary sage for use in the treatment of cardiovascular and inflammatory diseases and for cancers susceptible to an inhibitor of oxidative stress (activation of Nerf2), NF-?B inhibitor and an endothelin receptor inhibitor. The present invention also relates to compositions from clary sage useful to inhibit cell proliferation and for the induction of apoptosis.
Abstract: Generation of longer cDNA fragments from SAGE tags for gene identification (GLGI) is disclosed. This method converts SAGE tags, which are about 10 base pairs in length, into their corresponding 3? cDNA fragments covering hundred bases. This added information provides for more accurate genome-wide analysis and overcomes the inherent deficiencies of SAGE. The generation of longer cDNA fragments from isolated and purified protein fragments for gene identification is also disclosed. This method converts a short amino acid sequence into extended versions of the DNA sequences encoding the protein/protein fragment and additional 3? end sequences of the gene encoding the protein. This additional sequence information allows gene identification from purified protein sequences. The invention also provides a high-throughput GLGI procedure for identifying genes corresponding to a set of unidentified SAGE tags.
Type:
Grant
Filed:
December 22, 2000
Date of Patent:
July 12, 2005
Assignee:
Arch Development Corporation
Inventors:
San Ming Wang, Jian-jun Chen, Janet D. Rowley
Abstract: Self-aligned gate endcap (SAGE) architectures without fin end gaps, and methods of fabricating self-aligned gate endcap (SAGE) architectures without fin end gaps, are described. In an example, an integrated circuit structure includes a semiconductor fin having a cut along a length of the semiconductor fin. A gate endcap isolation structure is in a location of the cut of the semiconductor fin and in contact with the semiconductor fin.
Type:
Application
Filed:
September 18, 2020
Publication date:
March 24, 2022
Inventors:
Leonard P. GULER, Zachary GEIGER, Glenn A. GLASS, Szuya S. LIAO
Abstract: Self-aligned gate endcap (SAGE) architectures having gate contacts, and methods of fabricating SAGE architectures having gate contacts, are described. In an example, an integrated circuit structure includes a gate structure over a semiconductor fin. A gate endcap isolation structure is laterally adjacent to and in contact with the gate structure. A trench contact structure is over the semiconductor fin, where the gate endcap isolation structure is laterally adjacent to and in contact with the trench contact structure. A local gate-to-contact interconnect is electrically connecting the gate structure to the trench contact structure.
Abstract: Self-aligned gate endcap (SAGE) architectures having gate contacts, and methods of fabricating SAGE architectures having gate contacts, are described. In an example, an integrated circuit structure includes a gate structure over a semiconductor fin. A gate endcap isolation structure is laterally adjacent to and in contact with the gate structure. A trench contact structure is over the semiconductor fin, where the gate endcap isolation structure is laterally adjacent to and in contact with the trench contact structure. A local gate-to-contact interconnect is electrically connecting the gate structure to the trench contact structure.
Abstract: Self-aligned gate endcap (SAGE) architectures having gate contacts, and methods of fabricating SAGE architectures having gate contacts, are described. In an example, an integrated circuit structure includes a gate structure over a semiconductor fin. A gate endcap isolation structure is laterally adjacent to and in contact with the gate structure. A trench contact structure is over the semiconductor fin, where the gate endcap isolation structure is laterally adjacent to and in contact with the trench contact structure. A local gate-to-contact interconnect is electrically connecting the gate structure to the trench contact structure.
Abstract: Dual self-aligned gate endcap (SAGE) architectures, and methods of fabricating dual self-aligned gate endcap (SAGE) architectures, are described. In an example, an integrated circuit structure includes a first semiconductor fin having a cut along a length of the first semiconductor fin. A second semiconductor fin is parallel with the first semiconductor fin. A first gate endcap isolation structure is between the first semiconductor fin and the second semiconductor fin. A second gate endcap isolation structure is in a location of the cut along the length of the first semiconductor fin.
Type:
Application
Filed:
April 2, 2018
Publication date:
October 3, 2019
Inventors:
Sairam SUBRAMANIAN, Walid M. HAFEZ, Sridhar GOVINDARAJU, Mark LIU, Szuya S. LIAO, Chia-Hong JAN, Nick LINDERT, Christopher KENYON
Abstract: Self-aligned gate endcap (SAGE) architectures having gate contacts, and methods of fabricating SAGE architectures having gate contacts, are described. In an example, an integrated circuit structure includes a gate structure over a semiconductor fin. A gate endcap isolation structure is laterally adjacent to and in contact with the gate structure. A trench contact structure is over the semiconductor fin, where the gate endcap isolation structure is laterally adjacent to and in contact with the trench contact structure. A local gate-to-contact interconnect is electrically connecting the gate structure to the trench contact structure.
Abstract: Dual self-aligned gate endcap (SAGE) architectures, and methods of fabricating dual self-aligned gate endcap (SAGE) architectures, are described. In an example, an integrated circuit structure includes a first semiconductor fin having a cut along a length of the first semiconductor fin. A second semiconductor fin is parallel with the first semiconductor fin. A first gate endcap isolation structure is between the first semiconductor fin and the second semiconductor fin. A second gate endcap isolation structure is in a location of the cut along the length of the first semiconductor fin.
Type:
Application
Filed:
November 15, 2021
Publication date:
March 10, 2022
Inventors:
Sairam SUBRAMANIAN, Walid M. HAFEZ, Sridhar GOVINDARAJU, Mark LIU, Szuya S. LIAO, Chia-Hong JAN, Nick LINDERT, Christopher KENYON