Search Patents
  • Use of dilinoleoylphosphatidylcholine (DLPC) for treatment and prevention of cirrhosis and fibrosis in the liver
    Patent number: 5284835
    Abstract: This invention encompasses pharmaceutical compositions and a dietary supplement for treating or preventing alcoholic cirrhosis of the liver which comprises administering about 1 to 3 grams per day of dilinoleoylphosphatidylcholine (DLPC).
    Type: Grant
    Filed: July 31, 1992
    Date of Patent: February 8, 1994
    Inventor: Charles S. Lieber
  • Method of making a superconducting fullerene composition by reacting a fullerene with an alloy containing alkali metal
    Patent number: 5196396
    Abstract: A method for making a superconducting fullerine composition, includes reacting a fullerine with an alloy, and particularly reacting C.sub.60 with a binary alloy including an alkali metal or a tertiary alloy including two alkali metals in the vapor phase. Also, a Cesium-doped fullerine high T.sub.c superconducting composition has the formula Cs.sub.x C.sub.60, and particularly Cs.sub.3 C.sub.60. Also, a homogeneous bulk single phase high T.sub.c superconducting composition has the formula (Rb.sub.x K.sub.1-x).sub.3 C.sub.60.
    Type: Grant
    Filed: July 16, 1991
    Date of Patent: March 23, 1993
    Assignee: The President and Fellows of Harvard College
    Inventor: Charles M. Lieber
  • Nanoscale wires and related devices
    Publication number: 20070281156
    Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.
    Type: Application
    Filed: March 21, 2006
    Publication date: December 6, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David Smith, Deli Wang, Zhaohui Zhong
  • Nanoscopic wired-based devices and arrays
    Publication number: 20070161237
    Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
    Type: Application
    Filed: September 29, 2006
    Publication date: July 12, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
  • Array-based architecture for molecular electronics
    Publication number: 20060161876
    Abstract: An architecture for nanoscale electronics is disclosed. The architecture comprises arrays of crossed nanoscale wires having selectively programmable crosspoints. Nanoscale wires of one array are shared by other arrays, thus providing signal propagation between the arrays. Nanoscale signal restoration elements are also provided, allowing an output of a first array to be used as an input to a second array. Signal restoration occurs without routing of the signal to non-nanoscale wires.
    Type: Application
    Filed: January 31, 2006
    Publication date: July 20, 2006
    Inventors: Andre DeHon, Charles Lieber
  • Nanoscale wires and related devices
    Publication number: 20060175601
    Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.
    Type: Application
    Filed: June 30, 2005
    Publication date: August 10, 2006
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David Smith, Deli Wang, Zhaohui Zhong
  • Nanoscale arrays, robust nanostructures, and related devices
    Publication number: 20050253137
    Abstract: The present invention relates generally to nanotechnology and sub-microelectronic circuitry, and more particularly to nanoelectronics. One aspect of the invention is directed to nanostructures on substrates. In some cases, the substrate may be or comprise glass and/or polymers, and in some cases, the substrate may be flexible and/or transparent. The present invention is also directed, according to another aspect, to techniques for fabricating nanostructures on substrates. For example, monolayers of nanoscale semiconductors may be etched, e.g. photolithographically, to yield discrete and/or predetermined arrays of nanoscale semiconductors and other articles on a substrate. In one embodiment, the array may include hundreds, thousands, or more of electronic components such as field-effect transistors. Such arrays may be connected to electrodes using photolithographic techniques, and in some cases, without the need for registering individual semiconductor-metal contacts.
    Type: Application
    Filed: November 22, 2004
    Publication date: November 17, 2005
    Applicant: President and Fellows of Harvard College
    Inventors: Dongmok Whang, Song Jin, Yue Wu, Michael McAlpine, Robin Friedman, Charles Lieber
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
    Publication number: 20070048492
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Application
    Filed: October 4, 2006
    Publication date: March 1, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Nanoscale sensors
    Publication number: 20060269927
    Abstract: Various aspects of the present invention generally relate to nanoscale wire devices and methods for use in determining analytes suspected to be present in a sample, and systems and methods of immobilizing entities such as reaction entities relative to nanoscale wires. In one aspect, a nucleic acid, such as DNA, may be immobilized relative to a nanoscale wire, and in some cases, grown from the nanoscale wire. In certain embodiments, the nucleic acid may interact with entities such as other nucleic acids, proteins, etc., and in some cases, such interactions may be reversible. As an example, an enzyme such as telomerase may be allowed to bind to DNA immobilized relative to a nanoscale wire. The telomerase may extend the length of the DNA, for instance, by reaction with free deoxynucleotide triphosphates in solution; additionally, various properties of the nucleic acid may be determined, for example, using electric field interactions between the nucleic acid and the nanoscale wire.
    Type: Application
    Filed: May 25, 2005
    Publication date: November 30, 2006
    Inventors: Charles Lieber, Fernando Patolsky, Gengfeng Zheng
  • Nanoscopic wire-based devices and arrays
    Publication number: 20060220067
    Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
    Type: Application
    Filed: December 20, 2005
    Publication date: October 5, 2006
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
    Publication number: 20070026645
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Application
    Filed: October 4, 2006
    Publication date: February 1, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
    Publication number: 20070032023
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Application
    Filed: October 4, 2006
    Publication date: February 8, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
    Publication number: 20070032051
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Application
    Filed: October 4, 2006
    Publication date: February 8, 2007
    Applicant: President and fellows of Harvard College
    Inventors: Charles Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
    Publication number: 20050164432
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and my have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Application
    Filed: March 17, 2005
    Publication date: July 28, 2005
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Nanosensors
    Publication number: 20070264623
    Abstract: The present invention generally relates to nanoscale wires for use in determining analytes suspected to be present in a sample, especially in connection with determining information about a sample containing, or suspected of containing, two or more analytes. For example, the invention can involve a competitive, uncompetitive, or non-competitive binding assay including a nanoscale wire to a sample containing a species able to interact with the retain entity to produce a product, where the sample also contains or is suspected of containing a second species able to interact with the reaction entity to prevent production of the product resulting from interaction of the first species and the reaction entity. Based upon determination of production of the product, determination of the second species in the sample can be made.
    Type: Application
    Filed: June 15, 2005
    Publication date: November 15, 2007
    Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
    Inventors: Wayne Wang, Chuo Chen, Keng-Hui Lin, Ying Fang, Charles Lieber
  • Nanoscopic wire-based devices and arrays
    Publication number: 20050117441
    Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
    Type: Application
    Filed: October 26, 2004
    Publication date: June 2, 2005
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
  • Nanosensors
    Publication number: 20060054936
    Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.
    Type: Application
    Filed: December 15, 2004
    Publication date: March 16, 2006
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
  • Transition metal oxide nanowires
    Publication number: 20050064731
    Abstract: Nanowires are disclosed which comprise transition metal oxides. The transition metal oxides may include oxides of group II, group III, group IV and lanthanide metals. Also disclosed are methods for making nanowires which comprise injecting decomposition agents into a solution comprising solvents and metallic alkoxide or metallic salt precursors.
    Type: Application
    Filed: July 22, 2002
    Publication date: March 24, 2005
    Inventors: Hongkun Park, Charles Lieber, Jeffrey Urban, Oian Gu, Wan Yun
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
    Publication number: 20070032052
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Application
    Filed: October 4, 2006
    Publication date: February 8, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Nanosensors
    Publication number: 20070158766
    Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.
    Type: Application
    Filed: October 17, 2006
    Publication date: July 12, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
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