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Publication number: 20120267604Abstract: Kinked nanowires are used for measuring electrical potentials inside simple cells. An improved intracellular entrance is achieved by modifying the kinked nanowires with phospholipids.Type: ApplicationFiled: September 24, 2010Publication date: October 25, 2012Inventors: Bozhi Tian, Ping Xie, Thomas J. Kempa, Charles M. Lieber, Itzhaq Cohen-Karni, Quan Qing, Xiaojie Duan
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Publication number: 20110315962Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized Nanodetector devices are described.Type: ApplicationFiled: April 11, 2011Publication date: December 29, 2011Applicant: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
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Patent number: 8399339Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized Nanodetector devices are described.Type: GrantFiled: April 11, 2011Date of Patent: March 19, 2013Assignee: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
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Publication number: 20130214252Abstract: In a method for fabricating a graphene structure, there is formed on a fabrication substrate a pattern of a plurality of distinct graphene catalyst materials. In one graphene synthesis step, different numbers of graphene layers are formed on the catalyst materials in the formed pattern. In a method for fabricating a graphene transistor, on a fabrication substrate at least one graphene catalyst material is provided at a substrate region specified for synthesizing a graphene transistor channel and at least one graphene catalyst material is provided at a substrate region specified for synthesizing a graphene transistor source, and at a substrate region specified for synthesizing a graphene transistor drain. Then in one graphene synthesis step, at least one layer of graphene is formed at the substrate region for the graphene transistor channel, and at the regions for the transistor source and drain there are formed a plurality of layers of graphene.Type: ApplicationFiled: September 8, 2011Publication date: August 22, 2013Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGEInventors: Jang-Ung Park, SungWoo Nam, Charles M. Lieber
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Patent number: 9029836Abstract: In a method for fabricating a graphene structure, there is formed on a fabrication substrate a pattern of a plurality of distinct graphene catalyst materials. In one graphene synthesis step, different numbers of graphene layers are formed on the catalyst materials in the formed pattern. In a method for fabricating a graphene transistor, on a fabrication substrate at least one graphene catalyst material is provided at a substrate region specified for synthesizing a graphene transistor channel and at least one graphene catalyst material is provided at a substrate region specified for synthesizing a graphene transistor source, and at a substrate region specified for synthesizing a graphene transistor drain. Then in one graphene synthesis step, at least one layer of graphene is formed at the substrate region for the graphene transistor channel, and at the regions for the transistor source and drain there are formed a plurality of layers of graphene.Type: GrantFiled: September 8, 2011Date of Patent: May 12, 2015Assignee: President and Fellows of Harvard CollegeInventors: Jung-Ung Park, SungWoo Nam, Charles M. Lieber
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Publication number: 20110042641Abstract: The present invention generally relates to nanotechnology and, in particular, to branched nanoscale wires cases, the branched nanoscale wires may be produced using vapor-phase and/or solution-phase synthesis. Branched nanoscale wires may be grown by depositing nanoparticles onto a nanoscale wire, and segments or “branches” can then be grown from the nanoparticles. The nanoscale wire may be any nanoscale wire, for example, a semiconductor nanoscale wire, a nanoscale wire having a core and a shell. The segments may be of the same, or of different materials, than the nanoscale wire, for example, semiconductor/metal, semiconductor/semiconductor. The junction between the segment and the nanoscale wire, in some cases, is epitaxial. In one embodiment, the nanoparticles are adsorbed onto the nanoscale wire by immobilizing a positively-charged entity, such as polylysine, to the nanoscale wire, and exposing it to the nanoparticles.Type: ApplicationFiled: September 11, 2007Publication date: February 24, 2011Applicant: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Bozhi Tian, Xiaocheng Jiang
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Publication number: 20100155698Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Type: ApplicationFiled: June 26, 2009Publication date: June 24, 2010Applicant: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln J. Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David C. Smith, Deli Wang, Zhaohui Zhong
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Publication number: 20140184196Abstract: The present invention generally relates to nanotechnology, including field effect transistors and other devices used as sensors (for example, for electrophysiological studies), nanotube structures, and applications. Certain aspects of the present invention are generally directed to transistors such as field effect transistors, and other similar devices. In one set of embodiments, a field effect transistor is used where a nanoscale wire, for example, a silicon nanowire, acts as a transistor channel connecting a source electrode to a drain electrode. In some cases, a portion of the transistor channel is exposed to an environment that is to be determined, for example, the interior or cytosol of a cell. A nanotube or other suitable fluidic channel may be extended from the transistor channel into a suitable environment, such as a contained environment within a cell, so that the environment is in electrical communication with the transistor channel via the fluidic channel.Type: ApplicationFiled: June 7, 2012Publication date: July 3, 2014Applicant: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Xiaojie Duan, Ruixuan Gao, Ping Xie, Xiaocheng Jiang
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Publication number: 20120329251Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.Type: ApplicationFiled: June 6, 2012Publication date: December 27, 2012Applicant: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Jiangtao Hu