Abstract: Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.

Abstract: Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.

Abstract: Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.