Abstract: A solid state microanemometer is micromachined from a bonded silicon wafer comprising two silicon layers. The microanemometer comprises a first semiconductor wafer doped with an impurity having an upper planar surface and a lower planar surface with a peripheral edge; and a second semiconductor wafer bonded to the first semiconductor wafer having an upper planar surface; a lower surface; and a cavity having a peripheral edge and a peripheral margin defined on the upper planar surface and bounded by the peripheral edge of the cavity wherein the lower planar surface of the first semiconductor is bonded to the peripheral margin of the cavity so as to at least partially close the cavity wherein 0.025 to 99% of the peripheral edge of the lower planar surface of the first semiconductor overlaps with the peripheral edge of the cavity.

Abstract: The invention is a solid state microanemometer and a method of making thereof. Specifically, the invention relates to a microanemometer including an electrically conductive resistor in the form of a semiconductor wafer doped with an impurity having an upper surface, a lower surface having a peripheral edge; a substrate bonded to the semiconductor wafer having an upper surface, a cavity having a peripheral edge and a peripheral margin defined on the upper surface and bounded by the peripheral edge of the cavity wherein the lower surface of the semiconductor wafer rests on and is supported by at least part of the peripheral edge of the cavity such that the semiconductor wafer is over the cavity; and a means for electrically connecting the resistor to a current source. The microanemometer also includes a plurality of metal conductors in contact with the resistor.