Abstract: A semiconductor wafer (1) has a multitude of chips (5), of which chips (5) each one of a given number of chips (5) is situated in one of a multitude of adjacent exposure fields (2), and further has process control modules (4) which are each arranged in an exposure field (2), namely each in place of at least one chip (5).

Abstract: Integrated circuits (1) on a wafer comprise a wafer substrate (2), a plurality of integrated circuits (1) formed lattice-like in rows and columns on the wafer substrate (2), and first and second saw lines (4, 5) separating the integrated circuits (1). The first saw lines (4) run parallel and equidistant with respect to each other in a first direction (x) defined by the rows and the second saw lines (5) run parallel and equidistant with respect to each other in a second direction (y)defined by the columns. The integrated circuits (1) on the wafer further comprise a plurality of process control modules (3) formed on the wafer substrate (2) such that a given process control module (3) of the plurality of process modules (3) is bounded by two consecutive first saw lines (4) as well as by two consecutive second saw lines (5).

Abstract: In a wafer (1) with a number of exposure fields (2), each of which exposure fields (2) comprises a number of lattice fields (3) with an IC (4) located therein, two groups (5, 7) of dicing paths (6, 8) are provided and two control module fields (A1, A2, B1, B2, C1, D1, D2, E1, E2, F1) are assigned to each exposure field (2), each of which control module fields extends parallel to a first direction (X) and contains at least one optical control module (OCM-A1, OCM-A2, OCM-BI, OCM-B2, OCM-C1, OCM-D1, OCM-D2, OCM-E1, OCME2, OCM-F1), wherein a first control module field (OCM-A1, OCM-B1, OCM-C1, OCMD1, OCM-E1, OCM-F1) of each exposure field (2) is located between a first edge (R1, S1, T1, U1, V1, Z1) and a row of lattice fields (3) of the exposure field (2) in question and a second control module field (OCM-A2, OCM-B2, OCM-D2, OCM-E2) is located between two rows of lattice fields (3) of the exposure field (2) in question, which are arranged adjacent to a second edge (R2, S1, U2, V2), and wherein both the first contr