Abstract: A semiconductor wafer (100) having a regular pattern of predetermined separation lanes (102) is provided, wherein the predetermined separation lanes (102) are configured in such a way that the semiconductor wafer is singularizable along the regular pattern.

Abstract: A semiconductor wafer (1) has a multitude of chips (5), of which chips (5) each one of a given number of chips (5) is situated in one of a multitude of adjacent exposure fields (2), and further has process control modules (4) which are each arranged in an exposure field (2), namely each in place of at least one chip (5).

Abstract: A semiconductor wafer (1) has a multitude of chips (5), of which chips (5) each one of a given number of chips (5) is situated in one of a multitude of adjacent exposure fields (2), and further has process control modules (4) which are each arranged in an exposure field (2), namely each in place of at least one chip (5).

Abstract: Integrated circuits (Ia, Ib) on a wafer (2) comprise first and second integrated circuits (Ia, Ib) which each include an electric circuit (3). Only the first integrated circuits (Ia) comprise each at least one bump (8) not contacting their relevant electric circuits (3).

Abstract: Integrated circuits (1) on a wafer comprise a wafer substrate (2) and a plurality of integrated circuits (1a, 1b, 1c) formed on the wafer substrate (2). Each integrated circuit (1a, 1b, 1c) comprises an electric circuit (24) and some of the integrated circuits (1b, 1c) comprise, in addition to their electric circuits (24), process control modules (3) as integral parts. The process control modules (3) are employed during dicing and pick-and-place to align the dicing/pick-and-place devices.

Abstract: In a wafer (1) with chips (2) and elongate separating zones (4) between the chips (2), each chip (2) comprises at least one sawing loop (6), which sawing loop (6) comprises two protecting strips (17, 18) projecting from a planar protecting layer (16) of the chip (2), wherein said protecting strips (17, 18) are widened by means of wider strip portions (26, 27, 28, 29) where they emerge from the planar protecting layer (16), and wherein the protecting strips (17, 18) and the planar protecting layer (16) are provided with weak spots (31, 32, 34) serving as envisaged breakage points.

Abstract: Integrated circuits (1) on a wafer comprise a wafer substrate (2) and a structure applied on a surface (4) of the wafer substrate (2). The structure forms a plurality of integrated circuits (1) formed on the wafer substrate (2) and the integrated circuits (1) are separated by saw lines (6, 7). The structure comprises a plurality of superposed layers (9a-9e) formed on the wafer substrate (2) and a top layer (10) formed on the superposed layers (9a-9e). The integrated circuit (1) on the wafer further comprise a plurality of alignment marks (3) intended for aligning a separating device (18) for separating the integrated circuits (1) on the wafer into individual integrated circuits (1) during a separation process, wherein the alignment marks (3) are formed from at least one of the superposed layers (9a-9e).

Abstract: Integrated circuits (1) on a wafer comprise a wafer substrate (2) and a structure applied on a surface (4) of the wafer substrate (2). The structure forms a plurality of integrated circuits (1) formed on the wafer substrate (2) and the integrated circuits (1) are separated by saw lines (6, 7). The structure comprises a plurality of superposed layers (9a-9e) formed on the wafer substrate (2) and a top layer (10) formed on the superposed layers (9a-9e). The integrated circuit (1) on the wafer further comprise a plurality of alignment marks (3) intended for aligning a separating device (18) for separating the integrated circuits (1) on the wafer into individual integrated circuits (1) during a separation process, wherein the alignment marks (3) are formed from at least one of the superposed layers (9a-9e).

Abstract: Consistent with an example embodiment, there is a semiconductor wafer substrate comprising a plurality of integrated circuits formed in arrays of rows and columns on the wafer substrate. A plurality of integrated circuits are in arrays of rows and columns on the wafer substrate; the rows and the columns have a first width. First and second saw lanes separate the integrated circuits, the first saw lanes are arranged parallel and equidistant with one another in a first direction defined by rows, and the second saw lanes are arranged parallel and equidistant with one another in a second direction defined by the columns. A plurality of process modules (PM) are on the wafer substrate, the PM modules defined in an at least one additional row/column having a second width. The at least one additional row/column is parallel to the plurality of device die in one direction.

Abstract: In a wafer (1) with a number of exposure fields (2), each of which exposure fields comprises a number of lattice fields (3) with an IC (4) located therein, two groups (5, 7) of saw paths (6, 8) are provided and two control module fields (A1, A2, B1, B2, C1, C2, D1, D2) are assigned to each exposure field, each of which control module fields contains at least one optical control module (OCM-A1, OCM-A2, OCM-B1, OCM-B2, OCM-C1, OCM-C2, OCM-D1, OCM-D2) and lies within the exposure field in question and comprises a plurality of control module field sections (A11, A12 . . . AIN and A21, A22 . . . A2N and B11, B12 . . . B1N and B21, B22 . . . B2N and C1N and C2N and D1N and D2N) and is distributed among several lattice grids (3), wherein each control module field section (A11 to D2N) is located in a lattice field and contains at least one control module component (10,11,12,13,14,15,16,17,18).

Abstract: In a wafer (1) with a number of exposure fields (2), each of which exposure fields (2) comprises a number of lattice fields (3) with an IC (4) located therein, two groups (5, 7) of dicing paths (6, 8) are provided and two control module fields (A1, A2, B1, B2, C1, D1, D2, E1, E2, F1) are assigned to each exposure field (2), each of which control module fields extends parallel to a first direction (X) and contains at least one optical control module (OCM-A1, OCM-A2, OCM-BI, OCM-B2, OCM-C1, OCM-D1, OCM-D2, OCM-E1, OCME2, OCM-F1), wherein a first control module field (OCM-A1, OCM-B1, OCM-C1, OCMD1, OCM-E1, OCM-F1) of each exposure field (2) is located between a first edge (R1, S1, T1, U1, V1, Z1) and a row of lattice fields (3) of the exposure field (2) in question and a second control module field (OCM-A2, OCM-B2, OCM-D2, OCM-E2) is located between two rows of lattice fields (3) of the exposure field (2) in question, which are arranged adjacent to a second edge (R2, S1, U2, V2), and wherein both the first contr