Abstract: A semiconductor wafer (100) having a regular pattern of predetermined separation lanes (102) is provided, wherein the predetermined separation lanes (102) are configured in such a way that the semiconductor wafer is singularizable along the regular pattern.

Abstract: Integrated circuits (Ia, Ib) on a wafer (2) comprise first and second integrated circuits (Ia, Ib) which each include an electric circuit (3). Only the first integrated circuits (Ia) comprise each at least one bump (8) not contacting their relevant electric circuits (3).

Abstract: Integrated circuits (Ia, Ib) on a wafer (2) comprise first and second integrated circuits (Ia, Ib) which each include an electric circuit (3). Only the first integrated circuits (Ia) comprise each at least one bump (8) not contacting their relevant electric circuits (3).

Abstract: Integrated circuits (1) on a wafer comprise a wafer substrate (2) and a plurality of integrated circuits (1a, 1b, 1c) formed on the wafer substrate (2). Each integrated circuit (1a, 1b, 1c) comprises an electric circuit (24) and some of the integrated circuits (1b, 1c) comprise, in addition to their electric circuits (24), process control modules (3) as integral parts. The process control modules (3) are employed during dicing and pick-and-place to align the dicing/pick-and-place devices.

Abstract: Integrated circuits (1) on a wafer comprise a wafer substrate (2) and a structure applied on a surface (4) of the wafer substrate (2). The structure forms a plurality of integrated circuits (1) formed on the wafer substrate (2) and the integrated circuits (1) are separated by saw lines (6, 7). The structure comprises a plurality of superposed layers (9a-9e) formed on the wafer substrate (2) and a top layer (10) formed on the superposed layers (9a-9e). The integrated circuit (1) on the wafer further comprise a plurality of alignment marks (3) intended for aligning a separating device (18) for separating the integrated circuits (1) on the wafer into individual integrated circuits (1) during a separation process, wherein the alignment marks (3) are formed from at least one of the superposed layers (9a-9e).