Search Patents
  • Publication number: 20060169629
    Abstract: A water treatment cartridge has a major and a minor axis in a horizontal cross-section and mounting lugs provided at the upper end of the cartridge, generally aligned with the major axis of the cartridge.
    Type: Application
    Filed: August 7, 2003
    Publication date: August 3, 2006
    Applicant: Strix Limited
    Inventors: Vincent Donnelly, Vincent Garvey
  • Publication number: 20070069118
    Abstract: Method and system for pumping a hyperthermal neutral beam source is described. The pumping system enables use of the hyperthermal neutral beam source for semiconductor processing applications, such as etching processes. An embodiment is described having a neutral beam source coupled to a processing chamber through a neutralizing grid. Control is provided by separately pumping the neutral beam source and the processing chamber.
    Type: Application
    Filed: September 29, 2005
    Publication date: March 29, 2007
    Inventors: Demetre Economou, Lee Chen, Vincent Donnelly
  • Publication number: 20100132887
    Abstract: A method is provided for creating a plurality of substantially uniform nano-scale features in a substantially parallel manner in which an array of micro-lenses is positioned on a surface of a substrate, where each micro-lens includes a hole such that the bottom of the hole corresponds to a portion of the surface of the substrate. A flux of charged particles, e.g., a beam of positive ions of a selected element, is applied to the micro-lens array. The flux of charged particles is focused at selected focal points on the substrate surface at the bottoms of the holes of the micro-lens array. The substrate is tilted at one or more selected angles to displace the locations of the focal points across the substrate surface. By depositing material or etching the surface of the substrate, several substantially uniform nanometer sized features may be rapidly created in each hole on the surface of the substrate in a substantially parallel manner.
    Type: Application
    Filed: May 5, 2009
    Publication date: June 3, 2010
    Applicant: University of Houston
    Inventors: Vincent Donnelly, Demetre Economou, Paul Ruchhoeft, Lin Xu, Sri Vemula, Manish Jain
  • Publication number: 20070131646
    Abstract: A method is provided for creating a plurality of substantially uniform nano-scale features in a substantially parallel manner in which an array of micro-lenses is positioned on a surface of a substrate, where each micro-lens includes a hole such that the bottom of the hole corresponds to a portion of the surface of the substrate. A flux of charged particles, e.g., a beam of positive ions of a selected element, is applied to the micro-lens array. The flux of charged particles is focused at selected focal points on the substrate surface at the bottoms of the holes of the micro-lens array. The substrate is tilted at one or more selected angles to displace the locations of the focal points across the substrate surface. By depositing material or etching the surface of the substrate, several substantially uniform nanometer sized features may be rapidly created in each hole on the surface of the substrate in a substantially parallel manner.
    Type: Application
    Filed: December 4, 2006
    Publication date: June 14, 2007
    Applicant: University of Houston
    Inventors: Vincent Donnelly, Demetre Economou, Paul Ruchhoeft, Lin Xu, Sri Vemula, Manish Jain
  • Publication number: 20030013269
    Abstract: The present invention provides a method of manufacturing a semiconductor device. The method includes depositing a metal oxide containing a dopant and having a high dielectric constant on a substrate; wherein the metal is aluminum or silicon and the dopant is zirconium or hafnium and etching the doped metal oxide with a plasma containing a halogenated compound.
    Type: Application
    Filed: July 10, 2001
    Publication date: January 16, 2003
    Inventors: Vincent M. Donnelly, Avinoam Kornblit, Kalman Pelhos
  • Patent number: 4498953
    Abstract: A highly selective--greater than 100 to 1--etch for silicon, tantalum, tantalum silicide and tantalum nitride is achieved by using polyatomic halogen fluorides. The selectivity is achievable without employing plasmas or wet etching.
    Type: Grant
    Filed: July 27, 1983
    Date of Patent: February 12, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: Joel M. Cook, Vincent M. Donnelly, Daniel L. Flamm, Dale E. Ibbotson, John A. Mucha
  • Patent number: 4377436
    Abstract: Endpoint detection during plasma-assisted etching is signalled by cessation or onset of spatially confined luminescence resulting from an etch reaction product. Sensitivity of the system is aided by an optically focused detector which selectively detects such fluorescence as associated with one or a small number of lithographic features.
    Type: Grant
    Filed: November 5, 1981
    Date of Patent: March 22, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Vincent M. Donnelly, Daniel L. Flamm
  • Patent number: 6511872
    Abstract: The present invention provides a method of manufacturing a semiconductor device. The method includes depositing a metal oxide containing a dopant and having a high dielectric constant on a substrate; wherein the metal is aluminum or silicon and the dopant is zirconium or hafnium and etching the doped metal oxide with a plasma containing a halogenated compound.
    Type: Grant
    Filed: July 10, 2001
    Date of Patent: January 28, 2003
    Assignee: Agere Systems Inc.
    Inventors: Vincent M. Donnelly, Jr., Avinoam Kornblit, Kalman Pelhos
  • Publication number: 20080135742
    Abstract: Method and system for pumping a hyperthermal neutral beam source is described. The pumping system enables use of the hyperthermal neutral beam source for semiconductor processing applications, such as etching processes. An embodiment is described having a neutral beam source coupled to a processing chamber through a neutralizing grid. Control is provided by separately pumping the neutral beam source and the processing chamber.
    Type: Application
    Filed: February 18, 2008
    Publication date: June 12, 2008
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Demetre J. Economou, Lee Chen, Vincent M. Donnelly
  • Patent number: 4397711
    Abstract: Crystallographic etching in III-V semiconductor materials such as GaAs is achieved, for example, by utilizing a suitable halogen containing entity such as chlorine, bromine and iodine. This crystallographic etching yields in one embodiment essentially vertical surfaces of optical quality. Therefore, the procedure is useful in fabricating integrated circuits and in producing optical devices.
    Type: Grant
    Filed: October 1, 1982
    Date of Patent: August 9, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Vincent M. Donnelly, Daniel L. Flamm, Dale E. Ibbotson
  • Patent number: 7358484
    Abstract: Method and system for pumping a hyperthermal neutral beam source is described. The pumping system enables use of the hyperthermal neutral beam source for semiconductor processing applications, such as etching processes. An embodiment is described having a neutral beam source coupled to a processing chamber through a neutralizing grid. Control is provided by separately pumping the neutral beam source and the processing chamber.
    Type: Grant
    Filed: September 29, 2005
    Date of Patent: April 15, 2008
    Assignee: Tokyo Electron Limited
    Inventors: Demetre J. Economou, Lee Chen, Vincent M. Donnelly
  • Patent number: 4359485
    Abstract: A metal layer is formed on a surface of a Group III-V compound semiconductor by placing the surface in contact with a metal-containing solution and directing laser radiation through the solution. The radiation has a wavelength which is absorbed in the surface, thereby thermally inducing a chemical reaction between the surface and the solution and causing metal from the solution to be deposited on the surface. Specific examples of the deposition of Pt, Au and Zn on InP and GaAs are described.
    Type: Grant
    Filed: May 1, 1981
    Date of Patent: November 16, 1982
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Vincent M. Donnelly, Robert F. Karlicek, Jr.
  • Patent number: 7638759
    Abstract: Method and system for pumping a hyperthermal neutral beam source is described. The pumping system enables use of the hyperthermal neutral beam source for semiconductor processing applications, such as etching processes. An embodiment is described having a neutral beam source coupled to a processing chamber through a neutralizing grid. Control is provided by separately pumping the neutral beam source and the processing chamber.
    Type: Grant
    Filed: February 18, 2008
    Date of Patent: December 29, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Demetre J. Economou, Lee Chen, Vincent M. Donnelly
  • Publication number: 20180226227
    Abstract: A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.
    Type: Application
    Filed: April 10, 2018
    Publication date: August 9, 2018
    Applicant: University of Houston System
    Inventors: Vincent M. Donnelly, Demetre J. Economou
  • Publication number: 20170361551
    Abstract: Nanopantography is a method for patterning nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching, with an oxide layer of silicon serving as a hard mask, can improve patterning speed and etch profile. With this method, high aspect ratio features can be fabricated in a substrate with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, provides improved patterning speed, feature aspect ratio, and etching profile.
    Type: Application
    Filed: December 8, 2015
    Publication date: December 21, 2017
    Inventors: Vincent M. Donnelly, Demetre J. Economou, Siyuan Tian
  • Publication number: 20110139748
    Abstract: A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.
    Type: Application
    Filed: December 13, 2010
    Publication date: June 16, 2011
    Applicant: UNIVERSITY OF HOUSTON
    Inventors: Vincent M. DONNELLY, Demetre J. ECONOMOU
  • Patent number: 4394237
    Abstract: A method for accurately monitoring and adjusting gas phase processes such as gas etching and chemical vapor deposition has been found. This method relies on the use of induced fluorescence. The gaseous phase used in the process to be monitored is probed by excitation with a suitable energy source. The emission from the gas phase induced through this excitation is then monitored and yields an accurate measure of concentration of the active species present. In turn the conditions of the fabrication process are adjusted based on these discerned concentrations.
    Type: Grant
    Filed: July 17, 1981
    Date of Patent: July 19, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Vincent M. Donnelly, Daniel L. Flamm, Robert F. Karlicek, Jr.
  • Patent number: 10207469
    Abstract: Nanopantography is a method for patterning nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching, with an oxide layer of silicon serving as a hard mask, can improve patterning speed and etch profile. With this method, high aspect ratio features can be fabricated in a substrate with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, provides improved patterning speed, feature aspect ratio, and etching profile.
    Type: Grant
    Filed: December 8, 2015
    Date of Patent: February 19, 2019
    Assignee: UNIVERSITY OF HOUSTON SYSTEM
    Inventors: Vincent M. Donnelly, Demetre J. Economou, Siyuan Tian
  • Patent number: 10515782
    Abstract: A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: December 24, 2019
    Assignee: UNIVERSITY OF HOUSTON SYSTEM
    Inventors: Vincent M. Donnelly, Demetre J. Economou
  • Patent number: D664378
    Type: Grant
    Filed: April 23, 2011
    Date of Patent: July 31, 2012
    Inventor: Vincent Vu
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