Abstract: Method and system for pumping a hyperthermal neutral beam source is described. The pumping system enables use of the hyperthermal neutral beam source for semiconductor processing applications, such as etching processes. An embodiment is described having a neutral beam source coupled to a processing chamber through a neutralizing grid. Control is provided by separately pumping the neutral beam source and the processing chamber.
Type:
Application
Filed:
February 18, 2008
Publication date:
June 12, 2008
Applicant:
TOKYO ELECTRON LIMITED
Inventors:
Demetre J. Economou, Lee Chen, Vincent M. Donnelly
Abstract: Method and system for pumping a hyperthermal neutral beam source is described. The pumping system enables use of the hyperthermal neutral beam source for semiconductor processing applications, such as etching processes. An embodiment is described having a neutral beam source coupled to a processing chamber through a neutralizing grid. Control is provided by separately pumping the neutral beam source and the processing chamber.
Type:
Grant
Filed:
September 29, 2005
Date of Patent:
April 15, 2008
Assignee:
Tokyo Electron Limited
Inventors:
Demetre J. Economou, Lee Chen, Vincent M. Donnelly
Abstract: Method and system for pumping a hyperthermal neutral beam source is described. The pumping system enables use of the hyperthermal neutral beam source for semiconductor processing applications, such as etching processes. An embodiment is described having a neutral beam source coupled to a processing chamber through a neutralizing grid. Control is provided by separately pumping the neutral beam source and the processing chamber.
Type:
Grant
Filed:
February 18, 2008
Date of Patent:
December 29, 2009
Assignee:
Tokyo Electron Limited
Inventors:
Demetre J. Economou, Lee Chen, Vincent M. Donnelly
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