Abstract: A metal layer is formed on a surface of a Group III-V compound semiconductor by placing the surface in contact with a metal-containing solution and directing laser radiation through the solution. The radiation has a wavelength which is absorbed in the surface, thereby thermally inducing a chemical reaction between the surface and the solution and causing metal from the solution to be deposited on the surface. Specific examples of the deposition of Pt, Au and Zn on InP and GaAs are described.
Type:
Grant
Filed:
May 1, 1981
Date of Patent:
November 16, 1982
Assignee:
Bell Telephone Laboratories, Incorporated
Inventors:
Vincent M. Donnelly, Robert F. Karlicek, Jr.
Abstract: A low temperature procedure for depositing III-V semiconductor materials that offers the possibility of higher deposition rates together with abrupt junction formation has been found. This process involves the irradiation at a deposition substrate with a high power density radiation source of deposition gases such as organometallic materials, e.g., trimethyl gallium and trimethyl indium. By utilizing a sufficiently high power density, multiphoton processes are induced in the deposition gas that, in turn, lead to advantageous deposited materials.
Type:
Grant
Filed:
September 16, 1985
Date of Patent:
February 24, 1987
Assignee:
AT&T Laboratories
Inventors:
Vincent M. Donnelly, Robert F. Karlicek, Jr.