Abstract: A Phase Change Memory (PCM) cell structure comprises both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM layer is protected from damage by the conductive encapsulating layer. Electrical isolation between adjacent PCM cells is provided by high electrical resistance regions which were formed by modifying the conductivity of both the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition thereof.
Type:
Grant
Filed:
March 19, 2009
Date of Patent:
January 5, 2010
Assignee:
International Business Machines Corporation
Inventors:
John Christopher Arnold, Tricia Breen Carmichael
Abstract: A method for forming a Phase Change Material (PCM) cell structure comprises forming both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM is protected from damage by a conductive encapsulating layer. Electrical isolation between adjacent cells is provided by modifying the conductivity of both the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition thereof, thereby forming high electrical resistance regions between the cells.
Type:
Grant
Filed:
July 21, 2007
Date of Patent:
June 23, 2009
Assignee:
International Business Machines Corporation
Inventors:
John Christopher Arnold, Tricia Breen Carmichael