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  • Method for Delineation of Phase Change Memory Cell Via Film Resistivity Modification
    Publication number: 20090020739
    Abstract: A PCM cell structure comprises a lower electrode composed of a Phase Change Memory (PCM) layer and a conductive encapsulating upper electrode layer. The PCM is protected from damage by a conductive encapsulating layer. Electrical isolation between adjacent cells is provided by modifying the conductivity of the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition.
    Type: Application
    Filed: July 21, 2007
    Publication date: January 22, 2009
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: John Christopher Arnold, Tricia Breen Carmichael
  • Phase change memory cells delineated by regions of modified film resistivity
    Patent number: 7642549
    Abstract: A Phase Change Memory (PCM) cell structure comprises both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM layer is protected from damage by the conductive encapsulating layer. Electrical isolation between adjacent PCM cells is provided by high electrical resistance regions which were formed by modifying the conductivity of both the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition thereof.
    Type: Grant
    Filed: March 19, 2009
    Date of Patent: January 5, 2010
    Assignee: International Business Machines Corporation
    Inventors: John Christopher Arnold, Tricia Breen Carmichael
  • Method for delineation of phase change memory (PCM) cells separated by PCM and upper electrode regions modified to have high film resistivity
    Patent number: 7550313
    Abstract: A method for forming a Phase Change Material (PCM) cell structure comprises forming both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM is protected from damage by a conductive encapsulating layer. Electrical isolation between adjacent cells is provided by modifying the conductivity of both the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition thereof, thereby forming high electrical resistance regions between the cells.
    Type: Grant
    Filed: July 21, 2007
    Date of Patent: June 23, 2009
    Assignee: International Business Machines Corporation
    Inventors: John Christopher Arnold, Tricia Breen Carmichael