Abstract: A method for storage includes collecting information regarding respective performance characteristics of a plurality of memory units in a memory array, each memory unit including one or more cells of the memory array. When data are received for storage in the memory array, a memory unit is selected responsively to the respective performance characteristics, and the received data are stored in the selected memory unit.

Abstract: A method for data storage includes performing an erasure operation on a group of analog memory cells (32). One or more of the memory cells in the group, which failed the erasure operation, are identified as erase-failed cells. A storage configuration that is used for programming the analog memory cells in the group is modified responsively to the identified erase-failed cells. Data is stored in the group of the analog memory cells using the modified storage configuration.

Abstract: A method for data storage includes defining at least first and second read commands for reading storage values from analog memory cells. The first read command reads the storage values at a first accuracy, and the second read command reads the storage values at a second accuracy, which is finer than the first accuracy. A condition is evaluated with respect to a read operation that is to be performed over a given group of the memory cells. One of the first and second read commands is selected responsively to the evaluated condition. The storage values are read from the given group of the memory cells using the selected read command.

Abstract: A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.

Abstract: A method for data storage includes, in a system that includes a host having a host memory and a memory controller that is separate from the host and stores data for the host in a non-volatile memory including multiple analog memory cells, storing in the host memory information items relating to respective groups of the analog memory cells of the non-volatile memory. A command that causes the memory controller to access a given group of the analog memory cells is received from the host. In response to the command, a respective information item relating to the given group of the analog memory cells is retrieved from the host memory by the memory controller, and the given group of the analog memory cells is accessed using the retrieved information item.

Abstract: A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

Abstract: A method for data storage includes providing a memory, which includes multiple groups of memory cells and is configured to concurrently store first data using a first storage configuration having a first access time, and second data using a second storage configuration having a second access time, longer than the first access time, such that each memory cell in each of the groups stores at least one bit of the first data and one or more bits of the second data. Data items are accepted for storage in the memory. The accepted data items are classified into a fast-access class and a normal-access class. The data items in the fast-access class are stored in the memory using the first storage configuration, and the data items in the normal-access class are stored in the memory using the second storage configuration.

Abstract: A method for data storage includes storing data in a memory that includes multi-bit analog memory cells, each of which stores at least first and second data bits by assuming one of a predefined plurality of programming levels associated with respective storage values. The memory has at least a first built-in command for reading the first data bits of the memory cells by comparing the storage values of the memory cells to a first number of first thresholds, and a second built-in command for reading the second data bits of the memory cells by comparing the storage values of the memory cells to a second number of second thresholds, such that the first number is less than the second number. After storing the data, the first data bits are read from the memory cells by executing at least the second built-in command.