Abstract: A data storage method includes, in a memory controller that accepts memory access commands from a host for execution in one or more memory units, holding a definition of a policy to be applied by the memory controller in the execution of the memory access commands in the memory units. The policy is reported from the memory controller to the host so as to cause the host to format memory access commands based on the reported policy.

Abstract: A method for data storage includes performing an erasure operation on a group of analog memory cells (32). One or more of the memory cells in the group, which failed the erasure operation, are identified as erase-failed cells. A storage configuration that is used for programming the analog memory cells in the group is modified responsively to the identified erase-failed cells. Data is stored in the group of the analog memory cells using the modified storage configuration.

Abstract: A method for data storage includes defining at least first and second read commands for reading storage values from analog memory cells. The first read command reads the storage values at a first accuracy, and the second read command reads the storage values at a second accuracy, which is finer than the first accuracy. A condition is evaluated with respect to a read operation that is to be performed over a given group of the memory cells. One of the first and second read commands is selected responsively to the evaluated condition. The storage values are read from the given group of the memory cells using the selected read command.

Abstract: A method for operating a memory device that includes a plurality of analog memory cells includes accepting at an input of the memory device a self-contained command to perform a memory access operation on at least one of the memory cells. The command includes an instruction specifying the memory access operation and one or more parameters that are indicative of analog settings to be applied to the at least one of the memory cells when performing the memory access operation. The self-contained command is executed in the memory device by extracting the parameters, applying the analog settings to the at least one of the memory cells responsively to the extracted parameters, and performing the specified memory access operation in accordance with the instruction on the at least one of the memory cells using the settings.

Abstract: A method for operating a memory (24) includes storing data in analog memory cells (32) of the memory by writing respective analog values to the analog memory cells. A set of the analog memory cells is identified, including an interfered cell having a distortion that is statistically correlated with the respective analog values of the analog memory cells in the set. A mapping is determined between combinations of possible analog values of the analog memory cells in the set and statistical characteristics of composite distortion levels present in the interfered memory cell. The mapping is applied so as to compensate for the distortion in the interfered memory cell.

Abstract: A method for data storage includes, in a system that includes a host having a host memory and a memory controller that is separate from the host and stores data for the host in a non-volatile memory including multiple analog memory cells, storing in the host memory information items relating to respective groups of the analog memory cells of the non-volatile memory. A command that causes the memory controller to access a given group of the analog memory cells is received from the host. In response to the command, a respective information item relating to the given group of the analog memory cells is retrieved from the host memory by the memory controller, and the given group of the analog memory cells is accessed using the retrieved information item.

Abstract: A method for operating a memory (36) includes storing data in a plurality of analog memory cells (40) that are fabricated on a first semiconductor die by writing input storage values to a group of the analog memory cells. After storing the data, multiple output storage values are read from each of the analog memory cells in the group using respective, different threshold sets of read thresholds, thus providing multiple output sets of the output storage values corresponding respectively to the threshold sets. The multiple output sets of the output storage values are preprocessed by circuitry (48) that is fabricated on the first semiconductor die, to produce preprocessed data. The preprocessed data is provided to a memory controller (28), which is fabricated on a second semiconductor die that is different from the first semiconductor die, so as to enable the memory controller to reconstruct the data responsively to the preprocessed data.