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Publication number: 20130075695Abstract: A light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system are disclosed. The light emitting device may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers. The first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer may include Al. The second conductive semiconductor layer may have Al content higher than Al content of the first conductive semiconductor layer. The first conductive semiconductor layer may have Al content higher than Al content of the active layer.Type: ApplicationFiled: November 16, 2012Publication date: March 28, 2013Applicant: LG INNOTEK CO., LTDInventor: LG Innotek Co., Ltd
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Publication number: 20130200335Abstract: Provided is a light emitting device package. The light emitting device package comprises a body formed of a silicon-based material; an insulating layer having a first opening on a surface of the body; a first and second metal layers disposed on the insulating layer; a light emitting device having a plurality of compound semiconductor layers disposed on a top surface of the body and connected to the first and second metal layers; and a protection device disposed on the body and electrically connected to the light emitting device, wherein the insulating layer has a second opening on a bottom surface of the body, wherein a first portion of the first metal layer is connected to the protective device and is disposed in the second opening of the insulating layer.Type: ApplicationFiled: March 11, 2013Publication date: August 8, 2013Applicant: LG INNOTEK CO., LTD.Inventor: LG INNOTEK CO., LTD.
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Publication number: 20130146841Abstract: A light emitting device package includes a body having a cavity, at least one insulating layer disposed on the body, first and second electrode layers disposed on the insulating layer and electrically isolated from each other, at least one light emitting device disposed on a bottom surface of the cavity and electrically connected to the first and second electrode layer, a light-transmissive resin layer sealing the light emitting device disposed in the cavity, and a metal layer disposed on a rear surface of the body to face the light emitting device, wherein the light emitting device is grown in an m-direction on the (1123) plane of a substrate and includes a light emitting structure including a first conductive semiconductor layer, and active layer, and a second conductive semiconductor layer.Type: ApplicationFiled: December 11, 2012Publication date: June 13, 2013Applicant: LG INNOTEK CO., LTD.Inventor: LG Innotek Co., Ltd.
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Publication number: 20130087765Abstract: A semiconductor light emitting device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active layer on the second semiconductor layer; a third semiconductor layer on the active layer; and a fourth semiconductor layer on the third semiconductor layer, wherein the first semiconductor layer has a composition equation of AlY(GaxIn1-x)1-YN(0?X,Y?1), wherein the third semiconductor layer has a composition equation of AlY(GaxIn1-x)1-YN(0?X,Y?1), wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers having a material different from the quantum barrier layers, wherein the plurality of quantum well layers include an AlGaN based semiconductor layer, wherein the plurality of quantum barrier layers has a larger band gap energy than that of the quantum well layers.Type: ApplicationFiled: December 3, 2012Publication date: April 11, 2013Applicant: LG INNOTEK CO., LTD.Inventor: LG INNOTEK CO., LTD.
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Publication number: 20110227039Abstract: A nitride-based light emitting device capable of achieving an enhancement in light emission efficiency and an enhancement in reliability is disclosed. The nitride-based light emitting device includes a light emitting layer including a quantum well layer and a quantum barrier layer, and a stress accommodating layer arranged on at least one surface of the quantum well layer of the light emitting layer.Type: ApplicationFiled: May 26, 2011Publication date: September 22, 2011Applicants: LG Electronics Inc., LG Innotek Co., Ltd.Inventor: Yong Tae Moon
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Patent number: 8008646Abstract: A light emitting diode is disclosed, wherein the light extraction efficiency of a device can be enhanced by forming patterns on a substrate, a light emitting structure is formed on the substrate formed with the patterns, the substrate is removed from the light emitting structure, and patterns corresponding to those formed on the substrate are formed on the light emitting structure.Type: GrantFiled: May 18, 2007Date of Patent: August 30, 2011Assignees: LG Electronics Inc., LG Innotek Co., Ltd.Inventor: See jong Leem
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Publication number: 20070221907Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed.Type: ApplicationFiled: February 9, 2007Publication date: September 27, 2007Applicants: LG ELECTRONICS INC., LG INNOTEK CO., LTD.Inventors: Jun Ho Jang, Yong Tae Moon
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Patent number: 8003993Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.Type: GrantFiled: December 14, 2009Date of Patent: August 23, 2011Assignees: LG Innotek Co., Ltd., LG Electronics Inc.Inventors: Hyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
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Patent number: 7939840Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.Type: GrantFiled: December 14, 2009Date of Patent: May 10, 2011Assignees: LG Innotek Co., Ltd., LG Electronics Inc.Inventors: Hyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
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Patent number: 8368087Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed.Type: GrantFiled: March 16, 2010Date of Patent: February 5, 2013Assignees: LG Electronics Inc., LG Innotek Co., Ltd.Inventors: Jun Ho Jang, Yong Tae Moon
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Publication number: 20140091277Abstract: An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.Type: ApplicationFiled: December 4, 2013Publication date: April 3, 2014Applicants: LG INNOTEK CO., LTD., LG ELECTRONICS INC.Inventors: Jun Ho JANG, Jae Wan CHOI, Duk Kyu BAE, Hyun Kyong CHO, Jong Kook PARK, Sun Jung KIM, Jeong Soo LEE
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Publication number: 20140361243Abstract: A light emitting device includes at least one layer below or above a reflective layer to prevent delamination of the reflective layer from a layer below and/or above the reflective layer.Type: ApplicationFiled: June 4, 2014Publication date: December 11, 2014Applicant: LG INNOTEK CO., LTD.Inventor: Seok Beom CHOI
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Publication number: 20140054544Abstract: Disclosed is a light emitting device including a light emitting structure including at least a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, an electrode layer on the light emitting structure, and a contact layer between the light emitting structure and the electrode layer and including a nitride semiconductor layer.Type: ApplicationFiled: August 26, 2013Publication date: February 27, 2014Applicant: LG INNOTEK CO., LTD.Inventors: Oh Min KWON, Jong Hak WON, Heon Jin SEO
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Publication number: 20150129832Abstract: Disclosed are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an AlxInyGa1-x-yN layer (0<x?1 and 0<y?1) on the first conductive semiconductor layer, an active layer on the AlxInyGa1-x-yN layer, and a second conductive semiconductor layer on the active layer.Type: ApplicationFiled: April 18, 2013Publication date: May 14, 2015Applicant: LG INNOTEK CO., LTD.Inventor: Jeong Sik Lee
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Patent number: 8263985Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer comprising a plurality of recesses on the active layer.Type: GrantFiled: April 23, 2009Date of Patent: September 11, 2012Assignee: LG Innotek Co., Ltd.Inventor: Sung Min Choi
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Patent number: 7816701Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a first quantum dot layer on the active layer; and a second conductive semiconductor layer on the first quantum dot layer.Type: GrantFiled: June 23, 2008Date of Patent: October 19, 2010Assignee: LG Innotek Co., Ltd.Inventor: Kyung Jun Kim
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Patent number: 7834343Abstract: A P-type nitride semiconductor and a method for manufacturing the same are provided. A nitride semiconductor includes a P-type nitride layer formed on a active layer, wherein the P-type nitride layer is a P-type nitride layer with the group 4 element doped.Type: GrantFiled: October 5, 2006Date of Patent: November 16, 2010Assignee: LG Innotek Co., Ltd.Inventor: Sung Chul Choi
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Patent number: 8013323Abstract: A P-type nitride semiconductor and a method for manufacturing the same are provided. A nitride semiconductor includes a P-type nitride layer formed on a active layer, wherein the P-type nitride layer is a P-type nitride layer with the group 4 element doped.Type: GrantFiled: December 4, 2009Date of Patent: September 6, 2011Assignee: LG Innotek Co., Ltd.Inventor: Sung Chul Choi
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Patent number: 8017965Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a first quantum dot layer on the active layer; and a second conductive semiconductor layer on the first quantum dot layer.Type: GrantFiled: September 13, 2010Date of Patent: September 13, 2011Assignee: LG Innotek Co., Ltd.Inventor: Kyung Jun Kim
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Patent number: 9246058Abstract: Disclosed are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an AlxInyGa1-x-yN layer (0<x?1 and 0<y?1) on the first conductive semiconductor layer, an active layer on the AlxInyGa1-x-yN layer, and a second conductive semiconductor layer on the active layer.Type: GrantFiled: April 18, 2013Date of Patent: January 26, 2016Assignee: LG INNOTEK CO., LTD.Inventor: Jeong Sik Lee