Search Patents
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Publication number: 20130134465Abstract: A vertical topology light emitting device comprises a conductive adhesion structure having a first surface and a second surface; a conductive support structure on the first surface; a reflective structure on the second surface, the reflective structure also serving as a first electrode; a semiconductor structure on the reflective structure; and a second electrode on the semiconductor structure.Type: ApplicationFiled: November 15, 2012Publication date: May 30, 2013Applicant: LG ELECTRONICS INC.Inventor: LG ELECTRONICS INC.
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Publication number: 20130175567Abstract: A light emitting device package and a method of manufacturing the light emitting device package are provided. A base is first provided and a hole is formed on the base. After a light emitting portion is formed on the base, a mold die is placed on the light emitting portion and a molding material is injected through the hole. The mold die is removed to complete the package.Type: ApplicationFiled: March 8, 2013Publication date: July 11, 2013Applicant: LG INNOTEK CO., LTD.Inventor: LG Innotek Co., Ltd.
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Publication number: 20130161675Abstract: Disclosed is a light emitting device. The light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers; and a light extraction structure on the light emitting structure. The light extraction structure comprises a plurality of first layers and a plurality of second layers which are alternately disposed with each other to have a negative refraction index.Type: ApplicationFiled: December 21, 2012Publication date: June 27, 2013Applicant: LG INNOTEK CO., LTD.Inventor: LG INNOTEK CO., LTD.
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Publication number: 20140021482Abstract: A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.Type: ApplicationFiled: September 4, 2013Publication date: January 23, 2014Applicants: LG INNOTEK CO., LTD., LG ELECTRONICS INC.Inventors: Jun Ho JANG, Geun Ho KIM
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Publication number: 20130049057Abstract: Disclosed is an LED package. The LED package includes a package body, a first frame and a second frame on the package body and a light emitting device chip on the first frame. The first frame is separated from the second frame, and the first frame includes a bottom frame on the package body and at least two sidewall frames extending from the bottom frame and inclined with respect to the bottom frame.Type: ApplicationFiled: October 28, 2012Publication date: February 28, 2013Applicant: LG INNOTEK CO., LTD.Inventor: LG INNOTEK CO., LTD.
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Publication number: 20140217452Abstract: A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.Type: ApplicationFiled: April 8, 2014Publication date: August 7, 2014Applicants: LG ELECTRONICS INC., LG INNOTEK CO., LTD.Inventors: Jun Ho JANG, Geun Ho KIM
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Patent number: 8008646Abstract: A light emitting diode is disclosed, wherein the light extraction efficiency of a device can be enhanced by forming patterns on a substrate, a light emitting structure is formed on the substrate formed with the patterns, the substrate is removed from the light emitting structure, and patterns corresponding to those formed on the substrate are formed on the light emitting structure.Type: GrantFiled: May 18, 2007Date of Patent: August 30, 2011Assignees: LG Electronics Inc., LG Innotek Co., Ltd.Inventor: See jong Leem
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Publication number: 20140124814Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.Type: ApplicationFiled: January 9, 2014Publication date: May 8, 2014Applicants: LG ELECTRONICS INC., LG INNOTEK CO., LTD.Inventors: Hyun Kyong CHO, Sun Kyung KIM, Jun Ho JANG
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Patent number: 8729595Abstract: A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.Type: GrantFiled: September 4, 2013Date of Patent: May 20, 2014Assignees: LG Electronics Inc., LG Innotek Co., Ltd.Inventors: Jun Ho Jang, Geun Ho Kim
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Patent number: 9246054Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.Type: GrantFiled: January 9, 2014Date of Patent: January 26, 2016Assignees: LG INNOTEK CO., LTD., LG ELECTRONICS INC.Inventors: Hyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
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Publication number: 20130056771Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer.Type: ApplicationFiled: November 2, 2012Publication date: March 7, 2013Applicant: LG INNOTEK CO., LTD.Inventor: LG Innotek Co., Ltd.
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Publication number: 20130146920Abstract: The ultraviolet light emitting device includes a substrate; a light emitting structure on the substrate, and including a plurality of compound semiconductors, each including at least a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode layer on the first conductive semiconductor layer; and a second electrode layer on the second conductive semiconductor layer. The first electrode layer is spaced apart from a side surface of the active layer, and is provided along a peripheral portion of the active layer. At least one of the first and second electrode layers is a reflective layer.Type: ApplicationFiled: December 12, 2012Publication date: June 13, 2013Applicant: LG INNOTEK CO., LTD.Inventor: LG INNOTEK CO., LTD.
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Publication number: 20130112959Abstract: There is provided a polarizer for organic light emitting diodes (OLED) having improved brightness. The polarizer, which comprises a linear polarizer and a ¼ retardation plate, comprises a reflective polarizer film disposed between the linear polarizer and the ¼ retardation plate and transmitting a polarized light horizontal to the transmission axis of the linear polarizer while reflecting a polarized light vertical to the transmission axis of the linear polarizer. The polarizer may be useful to highly improve the brightness of the OLED device when the polarizer is used in the OLED device.Type: ApplicationFiled: December 7, 2012Publication date: May 9, 2013Applicant: LG CHEM, LTD.Inventor: LG CHEM, LTD.
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Patent number: 7893451Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.Type: GrantFiled: December 14, 2009Date of Patent: February 22, 2011Assignees: LG Innotek Co., Ltd., LG Electronics Inc.Inventors: Hyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
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Patent number: 8283690Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.Type: GrantFiled: August 22, 2011Date of Patent: October 9, 2012Assignees: LG Innotek Co., Ltd., LG Electronics Inc.Inventors: Hyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
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Patent number: 8003993Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.Type: GrantFiled: December 14, 2009Date of Patent: August 23, 2011Assignees: LG Innotek Co., Ltd., LG Electronics Inc.Inventors: Hyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
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Publication number: 20130099219Abstract: There is provided a polarizer for organic light emitting diodes (OLED) having improved brightness. The polarizer, which comprises a linear polarizer and a ¼ retardation plate, comprises a reflective polarizer film disposed between the linear polarizer and the ¼ retardation plate and transmitting a polarized light horizontal to the transmission axis of the linear polarizer while reflecting a polarized light vertical to the transmission axis of the linear polarizer. The polarizer may be useful to highly improve the brightness of the OLED device when the polarizer is used in the OLED device.Type: ApplicationFiled: December 7, 2012Publication date: April 25, 2013Applicant: LG CHEM, LTD.Inventor: LG CHEM, LTD.
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Publication number: 20130200418Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. An electrode is on a bottom surface of the light emitting structure and an electrode layer and a conductive support member are disposed on the top surface of the light emitting structure. A recess is recessed from a top surface of the light emitting structure. A transmittive layer is between the light emitting structure and the electrode layer. The transmittive layer includes a first portion having a protrusion disposed in the recess.Type: ApplicationFiled: March 14, 2013Publication date: August 8, 2013Applicant: LG INNOTEK CO., LTD.Inventor: LG INNOTEK CO., LTD.
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Patent number: 7652295Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.Type: GrantFiled: May 7, 2007Date of Patent: January 26, 2010Assignees: LG Innotek Co., Ltd., LG Electronics Inc.Inventors: Hyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
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Publication number: 20130193442Abstract: Provided are a light emitting device and a method for manufacturing the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a light extraction layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is formed on the active layer. The light extraction layer is formed on the second conductive type semiconductor layer. The light extraction layer has a refractive index smaller than or equal to a refractive index of the second conductive type semiconductor layer.Type: ApplicationFiled: December 20, 2012Publication date: August 1, 2013Applicant: LG INNOTEK CO., LTD.Inventor: LG Innotek Co., Ltd.