Abstract: Disclosed is a light emitting device. The light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers; and a light extraction structure on the light emitting structure. The light extraction structure comprises a plurality of first layers and a plurality of second layers which are alternately disposed with each other to have a negative refraction index.

Abstract: A light emitting device package and a method of manufacturing the light emitting device package are provided. A base is first provided and a hole is formed on the base. After a light emitting portion is formed on the base, a mold die is placed on the light emitting portion and a molding material is injected through the hole. The mold die is removed to complete the package.

Abstract: Disclosed is an LED package. The LED package includes a package body, a first frame and a second frame on the package body and a light emitting device chip on the first frame. The first frame is separated from the second frame, and the first frame includes a bottom frame on the package body and at least two sidewall frames extending from the bottom frame and inclined with respect to the bottom frame.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer.

Abstract: The ultraviolet light emitting device includes a substrate; a light emitting structure on the substrate, and including a plurality of compound semiconductors, each including at least a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode layer on the first conductive semiconductor layer; and a second electrode layer on the second conductive semiconductor layer. The first electrode layer is spaced apart from a side surface of the active layer, and is provided along a peripheral portion of the active layer. At least one of the first and second electrode layers is a reflective layer.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. An electrode is on a bottom surface of the light emitting structure and an electrode layer and a conductive support member are disposed on the top surface of the light emitting structure. A recess is recessed from a top surface of the light emitting structure. A transmittive layer is between the light emitting structure and the electrode layer. The transmittive layer includes a first portion having a protrusion disposed in the recess.

Abstract: Provided are a light emitting device and a method for manufacturing the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a light extraction layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is formed on the active layer. The light extraction layer is formed on the second conductive type semiconductor layer. The light extraction layer has a refractive index smaller than or equal to a refractive index of the second conductive type semiconductor layer.

Abstract: A light-emitting device, a method of fabricating the light-emitting device, a light-emitting device package and a lighting system are provided. The light-emitting device may include a substrate 105; a first conductivity type semiconductor layer 12 disposed on the substrate 105; an active layer 114 disposed on the first conductivity type semiconductor layer 12; a second conductivity type semiconductor layer 16 disposed on the active layer 114; a first electrode 131 disposed on the first conductivity type semiconductor layer 112; a second electrode 132 disposed on the second conductivity type semiconductor layer 116; a first light extraction pattern P provided on a top surface of the substrate 105; and a second light extraction pattern 150 provided on sides of the substrate 105.

Abstract: A light emitting device package including a substrate; a light emitting device on the substrate; a first heatsink between the substrate and the light emitting device to transfer heat generated from the light emitting device; a second heatsink disposed below the first heatsink; and an electrode between the first heat sink and the light emitting device. Further, the substrate is disposed between the first and second heatsinks and is narrower at a position between the first and second heatsinks than at a position not between the first and second heatsinks, a material of the substrate is the same at the position between the first and second heatsinks as not between the first and second heatsinks, and the substrate at the position not between the first and second heatsinks surrounds the first and second heat sinks.

Abstract: The present invention discloses a light emitting package, comprising: a base; a light emitting device on the base; an electrical circuit layer electrically connected to the light emitting device; a gold layer on the electrical circuit layer; a wire electrically connected between the light emitting device and the gold layer; a screen member having an opening and disposed on the base adjacent to the light emitting device; and a lens covering the light emitting device, wherein a cross-sectional shape of the screen member is substantially rectangular, and a width of the cross-sectional shape of the screen member being larger than a height of the cross sectional shape of the screen member, wherein a bottom surface of the screen member is positioned higher than the light emitting device, and wherein an entire uppermost surface of the screen member is in contact with the lens.

Abstract: Disclosed is a light emitting device including a light emitting structure including a plurality of light emitting regions comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first distributed bragg reflective layer disposed on the light emitting regions, a first electrode unit disposed on the first semiconductor layer in one of the light emitting regions, a second electrode unit disposed on the second semiconductor layer in another of the light emitting regions, an intermediate pad disposed on the first semiconductor layer or the second semiconductor layer in at least still another of the light emitting regions, and at least one connection electrode disposed on the first distributed bragg reflective layer such that the connection electrode sequentially connects the light emitting regions in series.

Abstract: Provided are a light emitting device and a light unit. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a first conductive layer having a first portion disposed under the second conductive type semiconductor layer and a second portion electrically connected to the first conductive type semiconductor layer; a second conductive layer under the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer; an insulation layer between the first conductive layer and the second conductive layer; and a tunnel barrier between the first portion of the first conductive layer and the second conductive layer.

Abstract: A light emitting diode is disclosed, wherein the light extraction efficiency of a device can be enhanced by forming patterns on a substrate, a light emitting structure is formed on the substrate formed with the patterns, the substrate is removed from the light emitting structure, and patterns corresponding to those formed on the substrate are formed on the light emitting structure.

Abstract: A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

Abstract: A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

Abstract: A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.