Abstract: A sub-amount for mounting a light emitting device and a light emitting device package using the sub-mount are disclosed. The light emitting device package includes a package body having a mount for mounting a light emitting device, and through holes, electrodes formed on the package body, and a reflective layer arranged on one of the electrodes formed on an upper surface of the package body. The reflective layer has openings for enabling the light emitting device to be coupled to the electrodes.

Abstract: A light emitting device package capable of achieving an enhancement in light emission efficiency and a reduction in thermal resistance, and a method for manufacturing the same are disclosed. The method includes forming a mounting hole in a first substrate, forming through holes in a second substrate, forming a metal film in the through holes, forming at least one pair of metal layers on upper and lower surfaces of the second substrate such that the metal layers are electrically connected to the metal film, bonding the first substrate to the second substrate, and mounting at least one light emitting device in the mounting hole such that the light emitting device is electrically connected to the metal layers formed on the upper surface of the second substrate.

Abstract: A backlight unit including a substrate disposed thereon with conductive lines, a plurality of light emitting diodes each bonded to an upper surface of the substrate and spaced a predetermined distance apart from the substrate, and electrically connected to the conductive lines of the substrate; a transparent resin encompassing the plurality of light emitting diodes and formed on the upper surface of the substrate, and an optical transmission arrangement disposed on an upper surface of the transparent resin. Further, the arrangement includes a first layer for preventing light emitted from the light emitting diodes from being totally reflected by allowing an incident angle of the light to be less than a threshold angle, and a second layer for diffusing and emitting the light.

Abstract: Disclosed are an epoxy resin composition and a light emitting apparatus. The epoxy resin composition includes a triazine derivative epoxy resin and an alicyclic epoxy resin.

Abstract: A light emitting device package is provided. The light emitting device package comprises a package body, a light emitting device on the package body, and a light-transmitting light guide member under the light emitting device.

Abstract: Disclosed are an epoxy resin composition and a light emitting apparatus. The epoxy resin composition includes a triazine derivative epoxy resin and a silicon-containing alicyclic epoxy resin.

Abstract: A light emitting device according to the embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode on the light emitting structure; and a protection layer including a first metallic material on an outer peripheral region of one of the light emitting structure and the first electrode.

Abstract: Disclosed are an optical member, a display device including the same, and a method of fabricating the same. The optical member includes a first substrate; a wavelength conversion layer on the first substrate; and a second substrate on the wavelength conversion layer, wherein the wavelength conversion layer includes an oxygen barrier.

Abstract: A light emitting device package comprises: a substrate; first and second conduction members on the substrate; a light emitting diode on the substrate, the light emitting diode being electrically connected with the first and second conduction members; and a phosphor layer on the light emitting diode.

Abstract: A light emitting device package is provided comprising a substrate, a light source unit disposed on the substrate and a dam unit spaced apart from the light source unit and disposed on the substrate, wherein the dam unit including silicon resin and metal oxide, and the metal oxide is contained in an amount of 5 wt % to 150 wt % based on a total amount of the silicon resin.

Abstract: Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.

Abstract: A light emitting device package is provided. The light emitting device package comprises a substrate comprising a plurality of protrusions, an insulating layer on the substrate, a metal layer on the insulating layer, and a light emitting device on the substrate electrically connected to the metal layer.

Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a body including a cavity and formed in a transmittive material; a plurality of lead electrodes in the cavity; an isolation member disposed between the lead electrodes; a light emitting device electrically connected to the lead electrodes in the cavity; and a molding member on the light emitting device.

Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a III-V group compound semiconductor, a reflective layer comprising mediums, which are different from each other and alternately stacked under the light emitting structure, and a second electrode layer under the reflective layer.

Abstract: Disclosed are a light emitting device and a method for manufacturing the same. The light emitting device includes a substrate having a lead frame, a light emitting diode mounted on the substrate, a mold member formed on the substrate and the light emitting diode, and a reflecting member having an opening portion at one side thereof and being inclined at an outer portion of the mold member.

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a package body, a light emitting device installed in a cavity of the package body, an encapsulation layer to seal the light emitting device, and an electrode connected to the light emitting device. The package body includes a material having thermal conductivity lower than thermal conductivity of a material constituting the encapsulation layer.

Abstract: The semiconductor light-emitting structure has a plurality of compound semiconductor layers; a current spreading layer comprising a multi-layered transparent electrode layer on the plurality of compound semiconductor layers and a metal layer between the transparent electrode layers; and a second electrode electrically connected to the current spreading layer.

Abstract: Disclosed is a light emitting device package including a body including a recess, first and second electrodes disposed on the body, a light emitting device provided on the first electrode, and a molding part disposed on the light emitting device. At least one of the body and the molding part includes benzotriazol (BTA).

Abstract: Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.

Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a IH-V group compound semiconductor, a reflective layer comprising mediums, which are different from each other and alternately stacked under the light emitting structure, and a second electrode layer under the reflective layer.