Abstract: A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.

Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed.

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract: A method of manufacturing a light emitting diode, wherein a laser lift-off (LLO) layer and an epi-layer are formed on a nitride semiconductor substrate, and the nitride semiconductor substrate is then separated through a laser lift-off process, thereby improving the characteristics of the epi-layer and enabling to fabricate a high-grade and high-efficiency light emitting diode. Further, the LLO layer thus prepared is removed using a laser beam so that the relatively expensive nitride semiconductor substrate can be re-used, thereby reducing manufacturing costs.

Abstract: A nitride based light emitting device is disclosed. More particularly, a nitride based light emitting device capable of improving light emitting efficiency and reliability thereof is disclosed. The nitride based light emitting device includes a first conductive semiconductor layer connected to a first electrode, a second conductive semiconductor layer connected to a second electrode, an active layer located between the first conductive semiconductor layer and the second conductive semiconductor layer and having a quantum well structure, a first insertion layer located in at least one of a boundary between the first conductive semiconductor layer and the active layer and a boundary between the second conductive semiconductor layer and the active layer, and a second insertion layer located adjacent to the first insertion.

Abstract: A nitride based light emitting device is disclosed. More particularly, a nitride based light emitting device capable of improving light emitting efficiency and reliability thereof is disclosed. The nitride based light emitting device includes a first conductive semiconductor layer connected to a first electrode, a second conductive semiconductor layer connected to a second electrode, an active layer located between the first conductive semiconductor layer and the second conductive semiconductor layer and having a quantum well structure, a first insertion layer located in at least one of a boundary between the first conductive semiconductor layer and the active layer and a boundary between the second conductive semiconductor layer and the active layer, and a second insertion layer located adjacent to the first insertion.

Abstract: The semiconductor light emitting device according to embodiments has a first conductive type semiconductor layer, an un-doped semiconductor layer under the first conductive type semiconductor layer, and a plurality of semiconductor structures in the un-doped semiconductor layer.

Abstract: A light emitting device includes a substrate, a buffer layer, a first conductive layer, an active layer and a third conductive semiconductor layer. The first conductive layer has a prescribed tensile stress, and a second conductive semiconductor layer has a prescribed compressive stress.

Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Abstract: A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a flat top surface and a plurality of concave regions from the flat top surface, a reflector within the concave regions of the first semiconductor layer, and a second semiconductor layer on the first semiconductor layer.

Abstract: A vertical topology light emitting device comprises a support structure, a first adhesion layer, a second adhesion layer, a first metal layer, a second metal layer comprising a portion which directly contacts a GaN-based semiconductor structure, an interface layer, and a contact pad.

Abstract: A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a plurality of concave portions, a reflector in at least one of the concave portions of the first nitride semiconductor layer, and a second nitride semiconductor layer on the first nitride semiconductor layer.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer including a first carrier blocking layer of semiconductor material; an active layer below the first conductive semiconductor layer; and a second conductive semiconductor layer below the active layer.

Abstract: Disclosed are an optical member and a display device including the same. The optical member includes a light conversion layer including a plurality of light conversion particles; and a light diffusion layer including a plurality of light path conversion particles under the light conversion layer.

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a first quantum dot layer on the active layer; and a second conductive semiconductor layer on the first quantum dot layer.

Abstract: A semiconductor light emitting device comprises a first electrode contacting layer, a first active layer on the first electrode contacting layer, a second electrode contacting layer on the first active layer, a second active layer on the second electrode contacting layer, and a third electrode contacting layer on the second active layer.

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, and a layer of the plurality of compound semiconductor layers comprising a roughness comprising a sapphire material.

Abstract: A light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a refractive layer on the active layer, and a second conductive semiconductor layer on the refractive layer.

Abstract: A light emitting device comprises a first conductive semiconductor layer, a plurality of light emitting cells separated on the first conductive semiconductor layer, a phosphor layer on at least one of the light emitting cells, and a plurality of second electrodes electrically connected to the light emitting cells.

Abstract: There is provided a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises a first nitride semiconductor layer including amorphous powder, an active layer on the first nitride semiconductor layer, and a second nitride semiconductor layer on the active layer.