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  • Method for Delineation of Phase Change Memory Cell Via Film Resistivity Modification
    Publication number: 20090020739
    Abstract: A PCM cell structure comprises a lower electrode composed of a Phase Change Memory (PCM) layer and a conductive encapsulating upper electrode layer. The PCM is protected from damage by a conductive encapsulating layer. Electrical isolation between adjacent cells is provided by modifying the conductivity of the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition.
    Type: Application
    Filed: July 21, 2007
    Publication date: January 22, 2009
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: John Christopher Arnold, Tricia Breen Carmichael
  • Phase change memory cells delineated by regions of modified film resistivity
    Publication number: 20090179186
    Abstract: A Phase Change Memory (PCM) cell structure comprises both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM layer is protected from damage by the conductive encapsulating layer. Electrical isolation between adjacent PCM cells is provided by high electrical resistance regions which were formed by modifying the conductivity of both the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition thereof.
    Type: Application
    Filed: March 19, 2009
    Publication date: July 16, 2009
    Applicant: INTERNATIONAL BUISINESS MACHINES CORPORATION
    Inventors: John Christopher Arnold, Tricia Breen Carmichael