Abstract: A method for bonding conductors to semiconductor chip contact pads wherein each conductor is mounted on a dielectric tape and has an attachment portion that is supported by the tape to an adjacent location a uniform distance from the bonding location and that contacts on a level with the plane of the underside of the tape. One conductor supporting tape has portions of the tape that extend into a central contacting area opening to contact locations at contacting pads in rows remote from the edge. Another supporting tape has window openings at the contacting locations. The conductor ends are brought into the level of the underside of the tape by a manufacturing rolling operation between an elastomer surface roller and a solid backing roller.

Abstract: The fluxless bonding in a reducing atmosphere of integrated circuit contacts containing copper is enhanced using a layer of 200 to 1500 Angstrom thick palladium which inhibits copper oxide formation before fusion and reduces all oxides to promote wetting during fusion.

Abstract: A control element positioned between an object being heated and a source of microwave radiation is employed to prevent a localized concentration of microwave energy resulting from a discontinuity in the object surface. Close control is provided for heating an object with a sensitive coating.

Abstract: A heat control and interface stress control principle for a material in which a piezoelectric member is positioned in contact with an interface of the material so that a heat generated expansion of the material generates a piezoelectric signal that controls a thermoelectric cooler in contact with the piezoelectric member.

Abstract: An interconnecting and mounting technology involving the use of elastomeric properties. A mounting member grips, in a notch, the edge of a device supporting planar member with the device conductors brought to that edge. Conductors are provided at the surface of the mounting member, contacting the device conductors in the notch, and connecting with external wiring conductors on an external wiring planar member. The external wiring to device conductor interconnecting conductors can be on flex tape including elastomeric contact adaptation. Retention force for mounting member compression and mounting member to external wiring planar member retention is provided.

Abstract: A separable and reconnectable connection for electrical equipment is provided that is suitable for miniaturization in which vertical interdigitating members integrally attached and protruding from a planar portion are accommodated in control of damage in lateral displacement that occurs on mating with an opposite similar contact. Displacement damage is averted through accommodating lateral stresses by providing one or more of a conformal opposing contact, by strengthening through coating and base reinforcement and a deformable coating. The contacts are fabricated by physical and chemical processes including sputtering, normal and pulse electroplating and chemical vapor deposition. Pulse electroplating of palladium provides a dendritic deposit of uniform height, uniform rounded points and less branching. The contacts on completion are provided with a surrounding immobilizing material that enhances rigidity.

Abstract: In joining conductors at different levels on a carrier to contact locations on a planar substrate, mound shaped connections are employed, with the height of each mound shaped connection extending to the level of the particular conductor to which it is bonded. The mound shaped connections are formed using planar processes of controlled volume deposition, surface tension shaping on reflow, and physical deformation. The height of the mound shaped connections are calculated empirically from the volume deposited bounded by the substrate pad after surface tension limits the slump on reflowing.

Abstract: In integrated circuit packaging, chips are bonded to one side of an intermediate wafer that is resiliently mounted at the periphery with the entire other side of the intermediate wafer being maintained in conformal thermal transfer to external heat dissipation free of any solid connection.

Abstract: Electrical impedance matching for through plane connections or vias in a multiplane laminated wiring structure is provided by arranging the vias in patterns conforming to a standard characteristic impedance configuration. The pattern may be a five wire configuration with four vias surrounding the fifth and repeated over the area of the plane.

Abstract: A contact member for thermocompression bonding in integrated circuit packaging has on a conductor end a uniform texture deformable layer with a hardness value in the range of that of soft gold which is approximately 90 on the Knoop scale and with a rough surface morphology having ridges with approximately 1 micrometer modulation frequency and a depth between ridges of from 1/4 to 1/2 that of the average integrated circuit pad. The deformable layer is produced by plating gold in a strong electronegative plating bath within a range of 0.03 to 0.05 mA/sq.mm. current density. Plating apparatus, for plating different areas, with different electronegative conditions, with separate independently powered anodes, is provided.

Abstract: A separable and reconnectable connection for electrical equipment is provided that is suitable for miniaturization in which vertical interdigitating members integrally attached and protruding from a planar portion are accommodated in control of damage in lateral displacement that occurs on mating with an opposite similar contact. Displacement damage is averted through accommodating lateral stresses by providing one or more of a conformal opposing contact, by strengthening through coating and base reinforcement and a deformable coating. The contacts are fabricated by physical and chemical processes including sputtering, normal and pulse electroplating and chemical vapor deposition. The contacts on completion are provided with a surrounding immobilizing material that enhances rigidity.

Abstract: A contact member for thermocompression bonding in integrated circuit packaging has on a conductor end a uniform texture deformable layer with a hardness value in the range of that of soft gold which is approximately 90 on the Knoop scale and with a rough surface morphology having ridges with approximately 1 micrometer modulation frequency and a depth between ridges of from 1/4 to 1/2 that of the average integrated circuit pad. The deformable layer is produced by plating gold in a strong electronegative plating bath within a range of 0.03 to 0.05 mA/sq.mm. current density. Plating apparatus, for plating different areas, with different electronegative conditions, with separate independently powered anodes, is provided.

Abstract: A contact member for thermocompression bonding in integrated circuit packaging has on a conductor end a uniform texture deformable layer with a hardness value in the range of that of soft gold which is approximately 90 on the Knoop scale and with a rough surface morphology having ridges with approximately 1 micrometer modulation frequency and a depth between ridges of from 1/4 to 1/2 that of the average integrated circuit pad. The deformable layer is produced by plating gold in a strong electronegative plating bath within a range of 0.03 to 0.05 mA/sq.cm. current density. Plating apparatus, for plating different areas, with different electronegative conditions, with separatre independently powered anodes, is provided.

Abstract: A conductor attachment wherein each conductor is mounted on a dielectric tape and has an attachment portion that is supported by the tape to an adjacent location a uniform distance from the bonding location and that contacts on a level with the plane of the underside of the tape. One conductor supporting tape has portions of the tape that extend into a central contacting area opening to contact locations at contacting pads in rows remote from the edge. Another supporting tape has window openings at the contacting locations. The conductor ends are brought into the level of the underside of the tape by a manufacturing rolling operation between an elastomer surface roller and a solid backing roller.

Abstract: An integrated circuit bipolar transistor is described wherein the relative semiconductor electrode areas are established by an electrode pedestal that includes a base contact positioning feature and wiring constraints are relaxed by a base pedestal that facilitates the positioning of contact wiring that is independent of contact location. A heterojunction bipolar transistor having a base area less than twice as large as the emitter area is described.

Abstract: In integrated circuit packaging, chips are bonded to one side of an intermediate wafer that is resiliently mounted at the periphery with the entire other side of the intermediate wafer being maintained in conformal thermal transfer to external heat dissipation free of any solid connection.

Abstract: A semiconductor packaging technique employing a high Young's modulus, localized, external connection to pad, bond immobilizing member, together with, as needed, a low Young's modulus environmental protection covering member. A chip of Si or GaAs has an annulus of high Young's modulus epoxy over the line of external connections such as beam leads or wire bonds near the edge and a coating of silicone over the entire chip surface including the annulus.

Abstract: The superior thermal conductivity of immersion cooling combined with the service convenience of conduction cooling is provided through the use of unitary thermal transfer replaceable units positioned beneath a refrigeration source. Each unit contains electronic devices in a thermal transfer fluid. The unit construction permits replaceability in service without exposing a central fluid reservoir or opening a refrigerator.

Abstract: An integrated circuit bipolar transistor is described wherein the relative semiconductor electrode areas are established by an electrode pedestal that includes a base contact positioning feature and wiring constraints are relaxed by a base pedestal that facilitates the positioning of contact wiring that is independent of contact location. A heterojunction bipolar transistor having a base area less than twice as large as the emitter area is described.

Abstract: A field effect transistor having operating characteristics based on the control and modulation of the punch through phenomenon. The channel region between the source and the drain regions is appropriately doped such that the source and drain depletion regions overlap when no potential is applied between source and drain. The overlapped region in the absence of a gate field has a potential barrier. A gate voltage modulates the barrier to below the kT/q parameter. The source-to-drain fields also modulate the barrier.