Abstract: An electrostatic chuck (20) for holding a substrate (45) is described. One version of the chuck (20) suitable for mounting on a base (25), comprises (i) an electrostatic member (33) having an electrode (50) therein, and (ii) an electrical lead (60) extending through the base (25) to electrically engage the electrode (50) of the electrostatic member (33). When the chuck (20) is used to hold a substrate (45) in a process chamber (80) containing erosive process gas, the substrate (45) covers and substantially protects the electrical lead (60) from erosion by the erosive process gas. In a preferred version of the chuck (20), an electrical connector (55) forming an integral extension of the electrode (50), electrically connects the electrode (50) to a voltage supply terminal (70) used to operate the chuck (20).

Abstract: A method of etching a dielectric layer (20) on a substrate (25) with high etching selectivity, low etch rate microloading, and high etch rates is described. In the method, a substrate (25) having a dielectric layer (20) with resist material thereon, is placed in a process zone (55), and a process gas is introduced into the process zone (55). The process gas comprises (i) fluorohydrocarbon gas for forming fluorine-containing etchant species capable of etching the dielectric layer (20), (ii) NH.sub.3 -generating gas having a liquefaction temperature L.sub.T in a range of temperatures .DELTA.T of from about -60.degree. C. to about 20.degree. C., and (iii) carbon-oxygen gas. The temperature of substrate (25) is maintained within about .+-.50.degree. C. of the liquefaction temperature L.sub.T of the NH.sub.3 -generating gas. A plasma is formed from the process gas to etch the dielectric layer (20) on the substrate (25). Preferably, the volumetric flow ratio of fluorohydrocarbon:NH.sub.

Abstract: A composition suitable for treating metal surfaces prior to bonding of the surfaces to materials including metals, rubber, glass, polymers, sealants, coatings, and in particular polymeric adhesives, to enhance the strength of the bond and to prolong useful life in corrosive environments, is described. The composition comprises: (a) water; (b) metal alkoxide comprising M(OR).sub.

Abstract: An electrostatic chuck includes a pedestal having a metallic upper surface, and a layer of a porous dielectric material formed on said upper surface of the pedestal. The dielectric layer is impregnated with a plasma-resistant sealant.

Abstract: An electrostatic chuck (20) for holding a substrate (45) in a process chamber (80) having a voltage supply terminal (65) for charging the chuck (20). The chuck includes an electrostatic member (25) comprising at least one electrode (30), an electrically insulated holding surface (40) for holding a substrate (45) thereon, and an electrical contact surface (48) for providing charge to the electrode. A unidirectionally conducting coupler layer (70) electrically couples the contact surface (48) of the electrostatic member to the voltage supply terminal to conduct charge substantially only in a single direction from the terminal to the contact surface. Preferably, an electrical connector (50) having a junction surface (55) bonded to the contact surface (55) of the electrode, and a terminal surface (60) for electrically contacting the voltage supply terminal (65), is used to electrically couple the unidirectionally conducting coupler layer (70) to the voltage supply terminal (65).

Abstract: An electrostatic chuck includes a pedestal having a metallic upper surface, and a layer of a porous dielectric material formed on said upper surface of the pedestal. The dielectric layer is impregnated with a plasma-resistant sealant.

Abstract: A electrochemical cell for removing ions from a solution stream comprises a housing having first and second electrodes. At least one water-splitting ion exchange membrane is positioned between the electrodes, the water-splitting membrane comprising (i) a cation exchange surface facing the first electrode, and (ii) an anion exchange surface facing the second electrode. A solution stream pathway is defined by the water-splitting membrane. The solution stream pathway comprises (i) an inlet for influent solution stream, (ii) at least one channel that allows influent solution stream to flow past at least one surface of the water-splitting membrane to form one or more treated solution streams, and (iii) a single outlet that combines the treated solution streams to form a single effluent solution.

Abstract: A method of etching a multicomponent alloy on a substrate, without forming etchant residue on the substrate, is described. In the method, the substrate is placed in a process chamber comprising a plasma generator and plasma electrodes. A process gas comprising a volumetric flow ratio V.sub.r of (i) a chlorine-containing gas capable of ionizing to form dissociated Cl.sup.+ plasma ions and non-dissociated Cl.sub.2.sup.+ plasma ions, and (ii) an inert gas capable of enhancing dissociation of the chlorine-containing gas, in introduced into the process chamber. The process gas is ionized to form plasma ions that energetically impinge on the substrate by (i) applying RF current at a first power level to the plasma generator, and (ii) applying RF current at a second power level to the plasma electrodes. The combination of (i) the volumetric flow ratio V.sub.r of the process gas and (ii) the power ratio P.sub.

Abstract: A process for fabricating an electrostatic chuck (20) comprising the steps of (c) forming a base (80) having an upper surface with cooling grooves (85) therein, the grooves sized and distributed for holding a coolant therein for cooling the base; and (d) pressure conforming an electrical insulator layer (45) to the grooves on the base by the steps of (i) placing the base into a pressure forming apparatus (25) and applying an electrical insulator layer over the grooves in the base; and (ii) applying a sufficiently high pressure onto the insulator layer to pressure conform the insulator layer to the grooves to form a substantially continuous layer of electrical insulator conformal to the grooves on the base.

Abstract: A method and apparatus are provided for optimizing performance of a computer system component design by performance analysis of a simulation of the design. The method of the present invention comprises providing the computer system component design to an analyzing apparatus and carrying out a simulation run of the design. During the simulation run, operation data is generated cycle by cycle, and the generated operation data is collected and stored in a log file. The log file is input to a parser and the operation data is sequentially parsed to produce parsed data. Statistical calculations are then performed on the parsed data, and the performance results are output to the designer in graphical form. The performance information can be used to enhance performance of the computer system component prior to its fabrication.

Abstract: A failure resistant electrostatic chuck 20 for holding a substrate 35 during processing of the substrate 35, is described. The chuck 20 comprises a plurality of electrodes 25 covered by an insulator 30, the electrodes 25 capable of electrostatically holding a substrate 35 when a voltage is applied thereto. An electrical power bus 40 has a plurality of output terminals 45 that conduct voltage to the electrodes 25. Fuses 50 electrically connect the electrodes 25 to the output terminals 45 of the power bus 40, each fuse 50 connecting at least one electrode 25 in series to an output terminal from the power bus 40. The fuses 50 are capable of electrically disconnecting the electrode 25 from the output terminals 45 when the insulator 30 punctures and exposes the electrode 25 to the process environment causing a current to flow through the fuse 50.

Abstract: An electrostatic chuck (20) for holding a substrate (75) comprises (i) a base (80) having an upper surface (95) with grooves (85) therein, the grooves (85) sized and distributed for holding coolant for cooling a substrate (75), and (ii) a substantially continuous insulator film (45) conformal to the grooves (85) on upper surface (95) of the base (80). The base (80) can be electrically conductive and capable of serving as the electrode (50) of the chuck (20), or the electrode (50) can be embedded in the insulator film (45). The insulator film (45) has a dielectric breakdown strength sufficiently high that when a substrate (75) placed on the chuck (20) and electrically biased with respect to the electrode (50), electrostatic charge accumulates in the substrate (75) and in the electrode (50) forming an electrostatic force that attracts and holds the substrate (75) to the chuck (20).

Abstract: A substrate support member includes a pedestal and conductive member. The conductive member is cooled by the passage of a coolant therethrough, and a heat transfer enhancing fluid is flowed into the interface between the pedestal and the conductive member to increase the heat transfer from the pedestal to the conductive member.

Abstract: An electrostatic chuck (20) comprises at least one mesh electrode (30) on an underlying dielectric layer (25), the mesh electrode having apertures therethrough. A monocrystalline ceramic (28) covers the mesh electrode (30). The monocrystalline ceramic (28) comprises a layer of large crystals substantially oriented to one another, the layer of crystals having a resistivity sufficiently high to electrically insulate the mesh electrode (30). The monocrystalline ceramic (28) further comprises integral bonding interconnects (40) that form a unitary structure with the layer of large crystals, the bonding interconnects extending through the apertures in the mesh electrode (30) to bond directly to the underlying dielectric layer (25), substantially without adhesive.

Abstract: A puncture resistant electrostatic chuck (20) is described. The chuck (20) comprises at least one electrode (25); and a composite insulator (30) covering the electrode. The composite insulator comprises a matrix material having a conformal holding surface (50) capable of conforming to the substrate (35) under application of an electrostatic force generated by the electrode to reduce leakage of heat transfer fluid held between the substrate and the holding surface. A hard puncture resistant layer, such a layer of fibers or an aromatic polyamide layer, is positioned below the holding surface (50) and is sufficiently hard to increase the puncture resistance of the composite insulator.

Abstract: A stationary exercise bicycle comprises a frame having front and rear ground support elements, a front socket and a rear socket, and a seat socket; a pedal mechanism on said frame and a seat mounted on a seat socket at a level above the pedal mechanism, the seat being mounted for movement fore and aft relative to the seat socket, and upwardly and downwardly relative to the pedal mechanism.

Abstract: A method and apparatus for measuring thermal properties of electronic components (25) encapsulated in packaging is described. The method can be used to measure a junction temperature T.sub.j of the electronic component (25), without removing the package (30), and during operation of the electronic component (25) by a power supply.

Abstract: A semiconductor processing chamber includes a substrate support member on which the substrate is positioned during processing in the chamber. To align the substrate on the substrate support member, an alignment member extends about the perimeter of the substrate receiving portion of the support member. The alignment member includes an alignment face thereon, which urges a substrate into alignment with the substrate receiving face of the support member as the substrate is deposited on the support member. The alignment member may also include a recessed portion, which ensures the presence of a gap between the edge of the substrate and the support member when the substrate contacts the support member.

Abstract: A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.

Abstract: An erosion resistant electrostatic chuck 20 for holding a substrate 45 having a peripheral edge 50, in an erosive environment, comprises an electrostatic member 25 including (i) an electrode 30, and (ii) an insulator 35 covering the electrode. A barrier 55 is circumferentially disposed about the electrostatic member 25. The barrier 55 comprises a first contact surface 60 capable of being pressed against the peripheral edge 50 of the substrate 45 to form a seal around the substrate 45 to reduce exposure of the electrostatic member 25 of the chuck 20 to the erosive environment.