Abstract: A device for measuring running distance of a yarn, which detects an abnormality in yarn moving along a path of travel past a means for detecting the abnormality. The measuring device is capable of generating a stop signal in response to detecting the abnormality and measures the distance travelled following the generation of the stop signal. The location of the abnormality is indicated by various means including a plurality of lamps and numerics display. Further, the device can stop the abnormality at a predetermined distance.

Abstract: A discharge relay electrode is located between terminal electrodes of a gap-type surge absorber. In a microgap embodiment of the invention, a conducting film on a surface of an insulating tube is split by two circumferential gaps spaced apart longitudinally. The discharge relay electrode is positioned between the two gaps. In a gap type surge absorber, the discharge relay electrode is positioned within the insulating tube midway between the end electrodes, substantially filling the cross section of the tube, and dividing the interior of the tube into a plurality of chambers. For both types of surge absorbers, the discharge relay electrode is effective to relay discharge between the terminal electrodes.

Abstract: A control device for an actuator adapted to control a discharge pressure of a variable discharge pump by means of a regulator and capable of ensuring sufficient flow control range of change-over valves with respect to a spool stroke even when the number of rotations of an engine for driving the variable discharge pump is reduced to decrease a discharge rate of fluid from the variable discharge pump. Elastic force of a spring of a valve constituting the regulator is adjusted by means of a cylinder associated with a throttle lever for controlling the engine. Also, a control valve is arranged so as to be associated with the throttle lever, so that a pressure on a downstream side of the variable discharge pump is increased to change over the valve.

Abstract: A defective yarn repairing device of a warper, the defective yarn repairing device comprising a yarn detecting device for detecting a defective yarn contained in a warp; a yarn pulling device for pulling out the defective yarn from the warp; and a positioning device which has a knotter and positions the defective yarn pulling device at the position corresponding to the ascertained location of the defective yarn, wherein the positioning device causes the defective yarn pulling device to be moved in the widthwise direction of the warp; the defective yarn detecting device stops upon ascertaining the location of a defective yarn; the defective yarn pulling device pulls out the detected defective yarn from the warp; and wherein the knotter repairs the fluffy yarn.

Abstract: A semiconductor logic circuit apparatus includes a plurality of logic circuits each including complementary field effect transistors, and a plurality bipolar transistors associated with the respective ones of the logic circuits. When any one of the outputs of the logic circuits becomes high, an associated bipolar transistor becomes conductive to cause an output terminal of the apparatus to be charged from a voltage supply. With all the outputs of the logic circuits being low, all of the bipolar transistors are non-conductive, and a current supply coupled between the output terminal and ground dicharges charge on the output terminal.

Abstract: An optical semiconductor includes a photo diode integrated with a transistor built on first and second epitaxial layers grown of intrinsic material on a lightly doped substrate. A separating area divides the optical semiconductor into first and second isolated islands. The separating area is made up of a three separating areas, united end to end to form a single separating area. The first separating area is diffused at least upward from an interface between the substrate and the first epitaxial area. The second separating area is diffused both downward and upward from an interface between the first and second epitaxial layers. The third separating area is diffused downward from the surface of the second epitaxial layer into the substrate. The photo diode is formed in the first island area, and the transistor is formed in the second island area. An offsetting layer in the surface of the substrate, at least below the first island, is counterdoped to expand the depth of the depletion layer of the photo diode.

Abstract: A device detects seismic motion by linear motion of a seismic detection ball within an inner casing. Radial protrusions on the inside surface of a bottom wall of the inner casing maintain linear back-and-forth motion of the seismic detection ball while in contact with the casing bottom wall. On the inside surface of the perimeter wall of the inner casing, radially inward protrusions are formed parallel to one another to prevent rotation of the seismic detection ball in a circular path along the casing perimeter when it is lifted up from the casing bottom wall. The seismic detection ball is formed from a material unaffected by magnetic fields. The inner casing is suspended within an outer casing, in a condition of damped swaying. The inner casing is composed at least partially of a metallic material to provide sufficient weight to insure reliable automatic centering.

Abstract: An open drain output circuit includes a package having a reference potential section on at least a portion thereof. An output terminal of the circuit disposed on the package is connected through a load resistor to an external power supply. A common terminal also disposed on the package is connected to an external point of reference potential. A parasitic load capacitance is formed between the common terminal and the load resistor. A field effect transistor having drain, source and gate regions is disposed within the package. The drain and source regions are connected to the output and common terminals, respectively. The conductivity of the drain-source conduction path is variable in accordance with the value of a control voltage applied between the gate and source regions. Connections of the drain and source regions to the output and common terminals, respectively, provide parasitic inductances.

Abstract: A master-slice semiconductor integrated circuit device includes a substrate for an input/output circuit section, which is segmented into a plurality of segments during a master processing step. In a slice processing step, slice cells are formed, using different substrate segments. Input/output circuits are formed by respective slice cells so that desired different supply voltages can be applied to input/output circuits on different substrate segments.

Abstract: The running length of an inner synthetic resin within an outer synthetic resin in a composite synthetic resin is reduced by flowing a forced synthetic resin flow behind intermittent flows of the inner synthetic resin. The forced synthetic resin is of the same type as the outer synthetic resin. The composite resin flowing out of the apparatus is cut with a heated wire.

Abstract: In a rotary-piston engine, the contour of a normal section of the piston is either a composite trochoid or a translated composite trochoid. Each vertex of the normal section is either a generating point of the trochoid or has the form of a circular arc whose center is the generating point of the trochoid and whose radius is a fixed distance. Thus all the edges of the piston slide continuously on the inside face of engine cavity. The piston describes a planetary motion about a point at the same time as it revolves around an origin. Thus the volume of the working chambers changes. The opening and closing of connecting ducts for gas exchange are controlled. The resulting engine has only rotating moving parts, and they are in complete balance. The engine has no constrictions on the minor axis of the contour. Thus the movement of combustion gases is not impeded near top dead center. The engine has a high compression ratio.

Abstract: A method for manufacturing a semiconductor device having a diffusion region formed within a source. A one-conductivity type well is created in a semiconductor substrate, and marked off with field oxide layers. An insulating layer for holding charges is formed on a portion of the surface of the one-conductivity type well, onto which a conductive layer is applied. The insulating layer and the conductive layer are both etched to produce a memory charge storage and a control gate electrode, respectively. An opposite-conductivity type drain and source are formed in the one-conductivity type well. A one-conductivity type diffusion region is then formed within the opposite-conductivity type source, resulting in a memory cell having superior reliability.