Abstract: A comparator has a first input, a second input, an output, a control electrode of a first hysteresis transistor coupled to the output, and a control electrode of a second hysteresis transistor coupled to the output. A method for testing the comparator includes: reconfiguring the comparator to be an amplifier with unity gain feedback; providing an input voltage to the input; providing a first voltage to the first hysteresis transistor to provide a first offset voltage; measuring a first output voltage at the output; removing the first voltage from the first hysteresis transistor; providing the first voltage to the second hysteresis transistor; and measuring a second output voltage at the output.

Abstract: An analog to digital converter includes a first sample circuit that samples an analog input during a first phase of a clock. A second sample circuit samples the analog input during a second phase of the clock. A comparator compares a reference to the output of the first sample circuit during a non-overlapping time between an end of the first phase and beginning of the second phase and compares the reference to the output of the second sample circuit during a non-overlapping time between an end of the second phase and beginning of the first phase.

Abstract: A device comprises a conductive substrate, a micro electromechanical systems (MEMS) structure, and a plurality of bond pads. The conductive substrate has a first side and a second side, the second side opposite the first side. The MEMS structure is formed over the first side of the conductive substrate. The plurality of bond pads are formed over the first side of the conductive substrate and electrically coupled to the first side of the conductive substrate. The conductive substrate and plurality of bond pads function to provide electrostatic shielding to the MEMS structure.

Abstract: A voltage regulator regulates voltage at a node and has circuitry coupled to the node for providing a current to the node. A regulating transistor coupled between the node and a first power supply voltage terminal has a disabling transistor coupled in parallel and is selectively disabled by directly connecting the first power supply voltage terminal to the node. An inverting stage has an output connected to the regulating transistor. A load transistor has a first current electrode coupled to a second power supply voltage terminal, and a control electrode and second current electrode connected together and coupled to an input of the inverting stage. A sensing transistor has a first current electrode coupled to the second current electrode of the load transistor, a control electrode connected directly to the node and a second current electrode coupled to the first power supply voltage terminal.

Abstract: A memory controller comprises a multiplexer, a first-in, first-out memory (FIFO), a comparator, and a detection and adjustment circuit. The multiplexer receives a clock signal, a reference voltage, and a gating signal. The FIFO has a clock input coupled to an output of the multiplexer and a data input that receives data from a memory. The comparator has a first input coupled to an output of the FIFO, and a second input coupled to receive a calibration pattern. The calibration pattern is predetermined to match with a first portion of data from the FIFO, and is predetermined to not match with a second portion of data from the FIFO. The detection and adjustment circuit detects if a transition from the first portion to the second portion occurs within a predetermined time period. If the transition is not detected within the time period, a timing of the gating signal is adjusted.

Abstract: A Schmitt trigger circuit having a test circuit and method for testing are provided. The Schmitt trigger test circuit includes switches for reconfiguring the Schmitt trigger for testing by shorting the input and output terminals of an inverter and by opening a feedback path to allow the application of test voltages to the gates of feedback transistors coupled to the inverter. The method includes: directly connecting an input terminal of the inverter to an output terminal of the inverter; providing a first power supply voltage to the feedback transistors coupled to the inverter; measuring a first voltage at the input terminal; removing the first power supply voltage from the feedback transistors; providing a second power supply voltage to the feedback transistors. The test circuit and method reduce the test time by eliminating the need to ramp an input voltage while monitoring the output.

Abstract: An integrated circuit comprises a plurality of memory cells and an array supply voltage control circuit. The plurality of memory cells are organized in rows and columns. A row comprises a word line and all of the memory cells coupled to the word line. A column comprises a bit line pair and all of the memory cells coupled to the bit line pair. The array supply voltage control circuit is coupled to the plurality of memory cells. The array supply voltage control circuit is for receiving a power supply voltage and for providing a reduced power supply voltage to memory cells of a selected column during a write operation in response to a voltage differential on the bit line pair of the selected column.

Abstract: A timer circuit, comprises a delay indication circuit, a frequency indication circuit, and a plurality of counters. The delay indication circuit is for providing a delay time indication. The frequency indication circuit is for providing a frequency indication of a frequency of a clock signal. Each counter of the plurality of counters includes a load input to receive an initial value, and an indication output to provide a count complete indication of the counter. During operation a set of the counters of the plurality of counters is coupled in series to provide an indication that a delay time has expired. At least a portion of the frequency indication is provided to the load input of one counter of the set and at least a portion of the delay time indication is provided to the load input of another counter of the set.

Abstract: A brown-out detection circuit includes a first resistive element, a first transistor, a second transistor, and a comparator. The first resistive element has a first terminal coupled to a first power supply voltage terminal, and a second terminal. The first transistor is of a first conductivity type and has a first current electrode coupled to the second terminal of the first resistive element, a control electrode, and a second current electrode. The second transistor is of a second conductivity type and has a first current electrode coupled to the second current electrode of the first transistor, a control electrode, and a second current electrode coupled to a second power supply voltage terminal. The comparator has a first input terminal coupled to the first terminal of the first resistive element, a second input terminal coupled to the second terminal of the first resistive element, and an output terminal for providing a brown-out detection signal.

Abstract: A dual port static random access memory cell has pull-down transistors, pull-up transistors, and pass transistors. A first active region has a first pull-down transistor coupled to a true data node, a second pull-down transistor coupled to a complementary data node; a first pass transistor coupled to the true data node, and a second pass transistor coupled to the complementary data node. A second active region has the same size and shape as the first active region and has a third pull-down transistor coupled in parallel to the first-pull down transistor, a fourth pull-down transistor coupled in parallel to the second pull-down transistor; a third pass transistor coupled to the true data node, and a fourth pass transistor coupled to the complementary data node. A first pull-up transistor and a second pull-up transistor are located between the first and second active regions.

Abstract: A system includes first, second, and third circuits and first and second capacitors. The first capacitor has a first power supply terminal coupled to positive power supply terminal, a second power supply terminal, and an input/output. The second capacitor has a first power supply terminal coupled the second power supply terminal of the first circuit, a second power supply terminal, and an input/output. The third circuit has a first power supply terminal coupled the second power supply terminal of the second circuit, a second power supply terminal, and an input/output. The first capacitor has a first terminal coupled to the input/output of the first circuit and a second terminal coupled to the input/output of the second circuit. The second capacitor has a first terminal coupled to the second terminal of the first capacitor and a second terminal coupled to the input/output of the third circuit.

Abstract: A method for forming a split-gate non-volatile memory (NVM) cell includes forming a first gate layer over a semiconductor substrate; forming a conductive layer over the first gate layer; patterning the first gate layer and the conductive layer to form a first sidewall, wherein the first sidewall comprises a sidewall of the first gate layer and a sidewall of the conductive layer; forming a first dielectric layer over the conductive layer and the semiconductor substrate, wherein the first dielectric layer overlaps the first sidewall; forming a second gate layer over the first dielectric layer, wherein the second gate layer is formed over the conductive layer and the first gate layer and overlaps the first sidewall; and patterning the first gate layer and the second gate layer to form a first gate and a second gate, respectively, of the split-gate NVM cell, wherein the second gate overlaps the first gate and a portion of the conductive layer remains between the first gate and the second gate.

Abstract: A current injector circuit comprises a clock modulating circuit, a first current injector, a feedback circuit, a first input modulating circuit and a second current injector. The clock modulating circuit receives a clock, a control signal, and an output. The first current injector has an input coupled to the clock modulating circuit, and an output coupled to a power supply terminal for providing a first current. The feedback circuit is coupled between the power supply terminal and another input of the clock modulating circuit. The feedback circuit is for providing the control signal for controlling the clock modulating circuit. The first current injector provides the first current in response to the clock modulating circuit. The first input modulating circuit receives an input signal, the control signal, and an output. The second current injector has an input coupled to the first input modulating circuit, and an output for providing a second current.

Abstract: A transceiver includes a harmonic termination circuit that receives a tunable harmonic voltage from a power amplifier control. The harmonic termination circuit includes a variable capacitor that is capable of adjusting its capacitance in response to the tunable harmonic termination voltage to achieve at least two modes of operation. The at least two modes of operation may be EDGE mode and GSM mode. In this embodiment, the harmonic termination circuit allows for linearity specifications of EDGE to be met, while not degrading the efficiency of the transceiver when operating in GSM mode. In one embodiment, the harmonic termination circuit further includes an inductive element in series with the variable capacitor.

Abstract: An encoded message is stored in a first memory. The encoded message is retrieved from the first memory as a retrieved encoded message that may contain an error. Syndromes are generated from the retrieved encoded message. The syndromes are used to determine if the retrieved encoded message has an error. Polynomial coefficients are generated for establishing a polynomial equation having a first number of solutions. The polynomial equation is solved only for a second number of solutions. The first number is greater than the second number. The second number of solutions comprises solutions corresponding to locations in the retrieved encoded message. Each location is corrected in the retrieved encoded message that corresponds to a solution of zero of the polynomial equation. The result is efficient error correction.

Abstract: A method for packaging an integrated circuit comprises the steps of: providing a ground plane, the ground plane having a recessed area shaped to receive an integrated circuit die, wherein the integrated circuit die having a first surface with active circuitry, a second surface, and an edge generally orthogonal to the first and second surfaces; attaching the second surface of the integrated circuit die to a bottom of the recessed area with a thermally conductive adhesive; filling a space between the edge of the integrated circuit die and a side of the recessed area with a fill material; forming an insulating layer on the ground plane and the first surface of the integrated circuit die; patterning the insulating layer to expose contacts on the first surface of the integrated circuit die; and plating electrical conductors on the insulating layer and the contacts.

Abstract: A method for forming a metal-semiconductor Schottky contact in a well region is provided. The method includes forming a first insulating layer overlying a shallow trench isolation in the well region; and removing a portion of the first insulating layer such that only the well region and a portion of the shallow trench isolation is covered by a remaining portion of the first insulating layer. The method further includes forming a second insulating layer overlying the remaining portion of the first insulating layer and using a contact mask, forming a contact opening in the second insulating layer and the remaining portion of the first insulating layer to expose a portion of the well region. The method further includes forming the metal-semiconductor Schottky contact in the exposed portion of the well region by forming a metal layer in the contact opening and annealing the metal layer.

Abstract: A method of writing data to a selected column of a memory includes selecting a first column. The data writing is initiated by applying a logic high to a first bit line of the first column and a first potential to a second bit line of the first column that is lower than the logic high. The first potential is removed and a second potential is applied to the second bit line. The second potential is less than the first potential. The first potential may be ground, and the second potential may be a negative voltage. Reducing the write voltage for the bit line that is receiving a logic low improves its ability to be written. By first bringing the logic low to the first potential, which may be ground, and then further reducing the applied voltage, the requirements on the source of the second potential are reduced.

Abstract: A system and method are provided. The system comprises a first and second processor, and a cross-signaling interface. The first processor executes instructions. The second processor executes the instructions in lockstep with the first processor. The cross-signaling interface is coupled between the first and second processors and is for signaling both an unanticipated altered state a location of the unanticipated altered state in the first processor to the second processor to cause the second processor to emulate the unanticipated altered state in lockstep with the first processor. The method comprises: executing instructions in a first processor; executing the instructions in a second processor in lockstep with the first processor; detecting an error condition in the first processor; transmitting information about the error condition to the second processor; processing the error condition in the first processor; and causing the first and second processor to emulate the error condition in lockstep.

Abstract: A circuit device is placed within an opening of a conductive layer which is then partially encapsulated with an encapsulant so that the active surface of the circuit device is coplanar with the conductive layer. At least a portion of the conductive layer may be used as a reference voltage plane (e.g. a ground plane). Additionally, a circuit device may be placed on a conductive layer such that an active surface of circuit device is between conductive layer and an opposite surface of circuit device. The conductive layer has at least one opening to expose the active surface of circuit device. The encapsulant may be electrically conductive or electrically non-conductive.