Abstract: A modified medical device for delivery of a pharmaceutically active material is described. The present inventors have found that many conventional medical devices contain a metallic or polymeric component that comes into contact with a pharmaceutically active material during use, and that the contact substantially reduce the pharmaceutical effectiveness of the pharmaceutically active material. The invention described herein concerns various modifications to the metallic or polymeric component that are effective to diminish such a substantial reduction in pharmaceutical effectiveness.

Abstract: A trench DMOS transistor device that comprises: (a) a substrate of a first conductivity type; (b) an epitaxial layer of first conductivity type over the substrate, wherein the epitaxial layer has a lower majority carrier concentration than the substrate; (c) a trench extending into the epitaxial layer from an upper surface of the epitaxial layer; (d) an insulating layer lining at least a portion of the trench; (e) a conductive region within the trench adjacent the insulating layer; (f) a body region of a second conductivity type provided within an upper portion of the epitaxial layer and adjacent the trench; (g) a source region of first conductivity type within an upper portion of the body region and adjacent the trench; and (h) one or more low resistivity deep regions extending into the device from an upper surface of the epitaxial layer. The low resistivity deep region acts to provide electrical contact with the substrate, which is a common drain region for the device.

Abstract: A trench MOSFET device and method of making the same.

Abstract: A method is provided for forming shallow and deep dopant implants adjacent source regions of a first conductivity type within an upper portion of an epitaxial layer in a trench MOSFET device.

Abstract: A modified medical device for delivery of a pharmaceutically active material is described. The present inventors have found that many conventional medical devices contain a metallic component that comes into contact with a pharmaceutically active material during use, and that the contact substantially reduce the pharmaceutical effectiveness of the pharmaceutically active material. The invention described herein concerns numerous modifications to the metallic component that are effective to prevent such a substantial reduction in pharmaceutical effectiveness.

Abstract: An organic optoelectronic device structure is provided that comprises the following: (a) a polymer substrate layer; (b) a first barrier region, which comprises two or more planarizing layers and two or more high-density layers, disposed over the polymer substrate layer; (c) a second barrier region, which comprises two or more planarizing layers, two or more high-density layers and at least one layer of an absorbing material that absorbs water, oxygen or both water and oxygen, disposed over the first barrier region; and (d) an organic optoelectronic device, which is selected from an organic light emitting diode, an organic electrochromic display, an organic photovoltaic device and an organic thin film transistor, disposed between the first and second barrier regions. The first and second barrier regions in this structure restrict transmission of water and oxygen from an outer environment to the optoelectronic device.

Abstract: A merged device is that comprises a plurality of MOSFET cells and a plurality of Schottky rectifier cells, as well as a method of designing and making the same. According to an embodiment of the invention, the MOSFET cells comprise: (a) a source region of first conductivity type formed within an upper portion of a semiconductor region, (b) a body region of second conductivity type formed within a middle portion of the semiconductor region, (c) a drain region of first conductivity type formed within a lower portion of the semiconductor region, and (d) a gate region provided adjacent the source region, the body region, and the drain region. The Schottky diode cells in this embodiment are disposed within a trench network and comprise a conductor portion in Schottky rectifying contact with the lower portion of the semiconductor region. At least one MOSFET cell gate region is positioned along a sidewall of the trench network and adjacent at least one Schottky diode cell in this embodiment.

Abstract: An organic optoelectronic device structure is provided.

Abstract: A bi-directional transient voltage suppression device with symmetric current-voltage characteristics has a lower semiconductor layer of first conductivity type, an upper semiconductor layer of first conductivity type, and a middle semiconductor layer adjacent to and disposed between the lower and upper layers having a second opposite conductivity type, such that upper and lower p−n junctions are formed. The middle layer has a net doping concentration that is highest at a midpoint between the junctions. Furthermore, the doping profile along a line normal to the lower, middle and upper layers is such that, within the middle layer the doping profile on one side of a centerplane of the middle layer mirrors the doping profile on an opposite side. In addition, an integral of the net doping concentration of the middle layer taken over the distance between the junctions is such that breakdown, when it occurs, is punch through breakdown, rather than avalanche breakdown.

Abstract: Disclosed are protected OLED devices comprising (a) a substrate; (b) an active region positioned on the substrate, wherein the active region comprises an anode layer, a cathode layer and a light-emitting layer disposed between the anode layer and the cathode layer; (c) a composite barrier layer disposed over the active region and/or over a surface of the substrate, the composite barrier layer comprising an alternating series of one or more polymeric planarizing sublayers and one or more high-density sublayers; and, (d) a thin carbon layer disposed between at least one polymeric planarizing sublayer and a region of the OLED device that is selected from the group consisting of the substrate, an adjacent high-density sublayer, and the active region. The composite barrier layer is provided to protect the active region of the OLED device from environmental elements such as oxygen and moisture. The thin carbon layer is provided to improve adhesion between adjacent layers.

Abstract: An integrated circuit having a plurality of trench Schottky barrier rectifiers within one or more rectifier regions and a plurality of trench DMOS transistors within one or more transistor regions.

Abstract: In a first aspect of the invention, a modified semiconductor substrate is provided. The modified substrate comprises: (1) a semiconductor substrate; (2) at least one buffer layer provided over at least a portion of the substrate; and (3) a plurality of trenches comprising (a) a plurality of internal trenches that extend into the semiconductor substrate and (b) at least one shallow peripheral trench that extends into the at least one buffer layer but does not extend into the semiconductor substrate. In another aspect, a method of selectively providing trenches in a semiconductor substrate is provided. According to a further aspect of the invention, a trench DMOS transistor structure that includes at least one peripheral trench and a plurality of internal trenches is provided.

Abstract: An organic optoelectronic device structure and a method of making the same. The structure comprises: (a) a first barrier region comprising (i) a first composite layer stack and (ii) a second composite layer stack attached to the first composite layer stack, (b) an organic optoelectronic device selected from an organic light emitting diode, an organic electrochromic display, an organic photovoltaic device and an organic thin film transistor; and (c) at least one additional barrier region, wherein the at least one additional barrier region cooperates with the first barrier region to restrict transmission of water and oxygen to the optoelectronic device from an outer environment.

Abstract: A trench Schottky barrier and a method of making the same in which the rectifier has a semiconductor region having first and second opposing faces; the semiconductor region having a drift region of a first conductivity type adjacent the first face and a cathode region of the first conductivity type adjacent the second face; the drift region having a lower net doping concentration than that of the cathode region. The rectifier also has a plurality of trenches extending into the semiconductor region from the first face; the trenches defining a plurality of mesas within the semiconductor region, and the trenches forming a plurality of trench intersections.

Abstract: In a first aspect of the invention, a modified semiconductor substrate is provided. The modified substrate comprises: (1) a semiconductor substrate; (2) at least one buffer layer provided over at least a portion of the substrate; and (3) a plurality of trenches comprising (a) a plurality of internal trenches that extend into the semiconductor substrate and (b) at least one shallow peripheral trench that extends into the at least one buffer layer but does not extend into the semiconductor substrate. In another aspect, a method of selectively providing trenches in a semiconductor substrate is provided. According to a further aspect of the invention, a trench DMOS transistor structure that includes at least one peripheral trench and a plurality of internal trenches is provided.

Abstract: A composition for delivery of a therapeutic agent is provided. The composition comprises: (a) a biocompatible block copolymer comprising one or more elastomeric blocks and one or more thermoplastic blocks and (b) a therapeutic agent, wherein the block copolymer is loaded with the therapeutic agent. The block copolymer is preferably of the formula X—(AB)n, where A is an elastomeric block, B is a thermoplastic block, n is a positive whole number and X is a seed molecule. The elastomeric blocks are preferably polyolefin blocks, and the thermoplastic blocks are preferably selected from vinyl aromatic blocks and methacrylate blocks. According to another aspect of the invention, a medical device is provided, at least a portion of which is insertable or implantable into the body of a patient. The medical device comprises (a) the above biocompatible block copolymer and (b) a therapeutic agent, wherein the block copolymer is loaded with the therapeutic agent.

Abstract: An organic optoelectronic device structure is provided. The organic optoelectronic device structure comprises: (a) a polymer substrate layer; (a) a first barrier region disposed over a first face of the polymer substrate layer; (c) an organic optoelectronic device disposed over a second face of the polymer substrate layer opposite the first face; (d) a second barrier region disposed over the second face of the polymer substrate layer and over the organic optoelectronic device; and (e) an adhesive region. The adhesive region is disposed between the polymer substrate layer and the second barrier region such that it bonds the polymer substrate layer to the second barrier region. Moreover, the adhesive region encircles the organic optoelectronic device such that the organic optoelectronic device is completely surrounded by the adhesive region, the polymer substrate layer and second barrier region.

Abstract: A Schottky rectifier is provided. The Schottky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift region of the first conductivity type adjacent the second face, and with the drift region having a lower net doping concentration than that of the cathode region; (b) one or more trenches extending from the second face into the semiconductor region and defining one or more mesas within the semiconductor region; (c) an insulating region adjacent the semiconductor region in lower portions of the trench; (d) and an anode electrode that is (i) adjacent to and forms a Schottky rectifying contact with the semiconductor at the second face, (ii) adjacent to and forms a Schottky rectifying contact with the semiconductor region within upper portions of the trench and (iii) adjacent to the insulating region within the lower portions of the trench.

Abstract: A trench MOSFET device and process for making the same are described. The trench MOSFET has a substrate of a first conductivity type, an epitaxial layer of the first conductivity type over the substrate, the epitaxial layer having a lower majority carrier concentration than the substrate, a plurality of trenches within the epitaxial layer, a first insulating layer, such as an oxide layer, lining the trenches, a conductive region, such as a polycrystalline silicon region, within the trenches adjacent to the first insulating layer, and one or more trench body regions and one or more termination body regions provided within an upper portion of the epitaxial layer, the termination body regions extending into the epitaxial layer to a greater depth than the trench body regions.

Abstract: The use of an intravascular cooling element to induce hypothermia in connection with a medical procedure. According to a first aspect of the present, invention, a coronary bypass procedure is conducted in which a patient's blood is oxygenated with the patient's lungs and in which blood is circulated using the patient's heart or using an intracorporeal pump. The procedure preferably comprises: (a) positioning a heat transfer element in a blood vessel of a patient; (b) cooling the body of the patient to less than 35° C., more preferably 32±° C., using the heat transfer element; and (c) forming a fluid communicating graft between an arterial blood supply and the coronary artery. The body of the patient is preferably heated to about 37° C. using the heat transfer element subsequent to the step of forming the fluid communicating graft.