Abstract: The heater sling according to this invention is capable of lifting, moving and positioning a workpiece. In particular, it relates to a device and method for lifting a circumferential heater used in the manufacture of silicon ingots by the Czochralski method. The invention operates by mechanically extending a plurality of slings under a workpiece, lifting the workpiece, and placing it in a desired location.

Abstract: A method is introduced which improves gas flow characteristics within a reaction chamber used in a Chemical Vapor Deposition (CVD) system, thereby reducing the formation of Light Point Defects (LPDs) and improving epitaxial layer thickness control. This is accomplished by forcing the gas flow from its normally turbulent or non-uniform state into a more steady, linear, and controlled flow using one or more baffles. A steady flow of reactant gases significantly reduces the tendency of particles to move from a lower portion of the reaction chamber and settle onto the wafer during processing, thus reducing LPDs. It further allows a more controlled deposition onto the wafer which in effect improves the layer thickness control.

Abstract: A process for removing waxes from silicon wafer polishing plates is provided. The process includes the steps of providing submersion baths of an alkali soap, de-ionized rinse water, sodium hydroxide, and additional de-ionized rinse water, in which polishing plates are exposed. The process eliminates the use of methylene chloride from the process.