Abstract: On an inverter for feeding power of a direct voltage source, in particular of a photovoltaic generator (PVG), into an alternating voltage mains (N), with an asymmetrically clocked bridge circuit with at least two first switches (S1, S2) clocked at mains frequency and with at least two second switches (S3, S4) clocked at a higher clock frequency, the efficiency is intended to be improved at low cost. This is achieved in that slow speed switches (S1, S2) of equal temperature stability are utilized for the mains frequency and that fast speed switches (S3, S4) with steeper switching slopes and higher temperature stability are utilized for the higher clock frequency, the fast speed switches (S3, S4) being locally separated from the slow speed switches (S1, S2).

Abstract: One embodiment of the present invention relates to a method for transistor matching. The power transmitter comprises a first, second, and third amplification path. The paths are selectively activated and deactivated to output a received signal with high efficiency and linearity. The first amplification path is configured to receive a first signal and output a first amplified signal to a first port of a output power combiner when activated and provide an impedance that results in a high reflection factor when deactivated. The second amplification path is configured to receive a second signal with 90° phase shift with respect to the first signal and output a second amplified signal to a second port of the combiner when activated and provide an impedance that results in a high reflection factor when deactivated.

Abstract: Amplifier for an ultra-wideband (UWB) signal receiver having a signal input (15) for receiving an ultra-wideband signal which is sent by a transmitter (1) and which is transmitted in a sequence of transmission channels (Ki) (which each have a particular frequency bandwidth) which has been agreed between the transmitter (1) and the receiver (4); a transistor (18) whose control connection is connected to the signal input (15); a resonant circuit (26, 30, 31) which is connected to the transistor (18) and whose resonant frequency can be set for the purpose of selecting the transmission channel (Ki) in line with the agreed sequence of transmission channels; and having a signal output (29) for outputting the amplified ultra-wideband signal, the signal output being tapped off between the transistor (18) and the resonant circuit.

Abstract: A fast frequency-hopping transceiver comprises a RF-unit arranged on a first chip, a base-band unit on a second chip, a bidirectional operable data and control interface arranged between said first and said second chip having at least one data line for data communication, at least one control line for controlling the data communication and at least one clock line for providing a clock signal, memory means implemented within said RF-unit containing all the required chip settings which are specific to a certain frequency of received and/or transmitted data being part of the intended hopping sequence. The transceiver also includes control means for programming said memory means during an initialization phase during a set-up of a communication link of said data communication.

Abstract: An offset determination arrangement includes a comparator device to compare an input signal with a reference value. A synchronization unit is provided to forward a comparison result of the comparator device as a function of a synchronization signal which can be generated by a synchronization clock generator. The synchronization signal includes clock pulses in which at least one clock period between adjacent clock pulses is shorter than a precedent clock period. The offset determination arrangement further includes an approximation unit to generate a compensation signal corresponding to an offset of the input signal as a function of the forwarded comparison result.

Abstract: A communication device partition for multiple device data standards to be received on one baseband integrated circuit is described. At least two interfaces are partitioned according to the data rate speed of various types of data standards and coupled to a multimode software define radio (SDR) modem. A digital baseband processor is coupled to the multimode SDR modem and receives the various types of application data compliant with various data standards.

Abstract: Various embodiments of a wireless multimode receiver having an off-chip duplex filter associated with a multimode band, and a blocker cancellation circuit disposed on a semiconductor chip are described in the present disclosure.

Abstract: A resistance changing memory unit cell includes a current control component operably coupled to a bit sense line, and a resistance changing memory element coupled between the current control component and a word line.

Abstract: A method for retransmission of erroneous data in a communications system includes receiving data blocks at a receiver that have been generated in a transmitter by the use of an error correcting code. The received data blocks are decoded by a linear programming algorithm. One or more symbols in the decoded data block are identified by subjecting the symbols in the decoded data block to an integrality criterion. A retransmission of a part of the data block based on the one or more identified symbols is then initiated.

Abstract: In a method for sending communication signals, space-time block coding is performed by dividing a data stream of complex-value data symbols into a number KT>2 of partial data streams of respectively n>2 data symbols. The data symbols in the partial data streams are used to form n×KT matrix CKT. Transmitter-end predistortion is performed by using the matrix CKT to form a matrix D, and the data symbols are sent by KT transmission antennas according to their arrangement in the matrix D.

Abstract: A method and apparatus is provided for improving implant uniformity of an ion beam experiencing pressure increase along the beam line. The method comprises generating a main scan waveform that moves an ion beam at a substantially constant velocity across a workpiece. A compensation waveform (e.g., quadratic waveform), having a fixed height and waveform, is also generated and mixed with the main scan waveform (e.g., through a variable mixer) to form a beam scanning waveform. The mixture ratio may be adjusted by an instantaneous vacuum pressure signal, which can be performed at much higher speed and ease than continuously modifying scan waveform. The mixture provides a beam scanning waveform comprising a non-constant slope that changes an ion beam's velocity as it moves across a workpiece. Therefore, the resultant beam scanning waveform, with a non-constant slope, is able to account for pressure non-uniformities in dose along the fast scan direction.

Abstract: One embodiment of the invention relates to a network communication device. The network communication device includes a network interface configured to receive an initial data stream. The network communication device also includes an interleaving redundancy encoder that comprises a memory unit arranged in N columns and D rows. The interleaving redundancy encoder is configured to calculate at least one redundancy byte based on a series of spaced, non-consecutive bytes in the initial data stream. Other systems and methods are also disclosed.

Abstract: An ion implantation system and associated method includes a scanner configured to scan a pencil shaped ion beam into a ribbon shaped ion beam, and a beam bending element configured to receive the ribbon shaped ion beam having a first direction, and bend the ribbon shaped ion beam to travel in a second direction. The system further includes an end station positioned downstream of the beam bending element, wherein the end station is configured to receive the ribbon shaped ion beam traveling in the second direction, and secure a workpiece for implantation thereof. In addition, the system includes a beam current measurement system located at an exit opening of the beam bending element that is configured to measure a beam current of the ribbon shaped ion beam at the exit opening of the beam bending element.

Abstract: A method of doping a semiconductor body is provided herein. In one embodiment, a semiconductor body is exposed to an activated hydrogen gas for a predetermined time period and temperature. The activated hydrogen gas that is configured to react with a surface of a semiconductor body. The activated hydrogen gas breaks existing bonds in the substrate (e.g., silicon-silicon bonds), thereby forming a reactive layer comprising weakened (e.g., silicon-hydrogen (Si—H) bonds, silanol (Si—OH) bonds) and/or dangling bonds (e.g., dangling silicon bonds). The dangling bonds, in addition to the easily broken weakened bonds, comprise reactive sites that extend into one or more surfaces of the semiconductor body. A reactant (e.g., n-type dopant, p-type dopant) may then be introduced to contact the reactive layer of the semiconductor body. The reactant chemically bonds to reactive sites comprised within the reactive layer, thereby resulting in a doped layer within the semiconductor body comprising the reactant.

Abstract: A method for calculating the power consumption of a mobile device, particularly of a mobile station of a mobile radio system, in an observation period ?t based on various possible system states sk in which the device can be in the period ?t. A value of a quantity ?k is determined system-state-dependently for the system states sk occurring in the period ?t. The power consumption in the period ?t is calculated in such a manner that the quantities ?k and state-dependent typical currents ik are taken into consideration.

Abstract: The disclosed invention provides a method for the fabrication of a bipolar transistor having a collector region comprised within a semiconductor body separated from an overlying base region by one or more isolation cavities (e.g., air gaps) filled with low permittivity gas. In particular, a multilayer base-collector dielectric film is deposited over the collector region. A base region is formed onto the multilayer dielectric film and is patterned to form one or more base connection regions. The multilayer dielectric film is selectively etched during a plurality of isotropic etch processes to allow for the formation of one or more isolation region between the base connection regions and the collector region, wherein the one or more isolation regions comprise cavities filled with a gas having a low dielectric constant (e.g., air). The resultant bipolar transistor has a reduced base-collector capacitance, thereby allowing for improved frequency properties (e.g., higher maximum frequency operation).

Abstract: A power amplifier includes a baseband modulator configured to receive a baseband amplitude component and generate a baseband modulated pulse string, an oscillator configured to receive a baseband phase component and generate phase modulated complex carrier signals, a complex up-converter configured to receive and mix the baseband modulated pulse string with the phase modulated complex carrier signals into mixed product signals, and two or more switched mode power amplifiers coupled to the complex up-converter, configured to amplify and switch the mixed product signals at the carrier frequency. The power amplifier further comprises complex filters individually coupled to one of the switch mode power amplifiers, configured to suppress image components in the amplified and switched mixed product signals, and a power combiner coupled to the two or more complex filters, configured to combine the real component of the complex filtered and amplified mixed product signals to generate an RF transmission signal.

Abstract: The invention relates to an amalgam decomposer for mercury cathode chlor-alkali cells. The amalgam decomposer of the invention contains a filling of carbon steel rings whose external surface is provided with a catalytic coating for amalgam decomposition consisting of one or more electrically conductive metals carbides. The internal surface of the rings is free of catalytic coating and wettable by the amalgam, while the external carbide catalytic coating is not wettable by the amalgam thereby favoring hydrogen evolution.

Abstract: In a method for generating a periodic training signal comprising cyclically expanded training symbols for a transceiver which transmits data via a data transmission channel using a predetermined number N of modulated carrier signals an address pointer for addressing a starting address in a memory is calculated for each training symbol on the basis of cyclic expansion parameters and, starting from the calculated starting address, 2*N stored samples of a transformed training symbol are read cyclically from the memory.

Abstract: A method of manufacturing capacitive elements for a capacitive device which comprises one or more layers is provided. At least one layer is etched from a first surface to a second surface thereof to form two sections of the layer, such that the sections are movable relative to one another, and such that a wall extending from the first surface to the second surface is formed on each of the two sections, the walls defining a gap therebetween. An etching step forms multiple recesses in each wall such that multiple capacitive elements are defined between adjacent recesses, the capacitive elements of one wall being offset from those of the other wall when the sections are stationary with respect to one another. A corresponding capacitive device is also provided.