Abstract: Multi-vitamin and mineral supplements for administration to lactating, non-lactating, and menopausal women, which comprise specific regimens of critical nutritional agents. The supplements are specifically tailored to meet nutritional requirements and maintain a woman's health during each stage of life.

Abstract: To improve the characteristics of fuel to be used in an engine of an automotive vehicle or a boat or ship, to reduce an amount of harmful substances in emission and to enhance a fuel consumption rate, a device for improving the characteristics of fuel is provided and connected between the engine of the automotive vehicle or the boat or ship and a fuel tank. A fuel pipe spirally wound is arranged within a hexagonal housing in outer shape. A carbon rod is provided inside of the fuel pipe and a coil is wound around its outer periphery. Powder of metal, mineral and oxide is filled between the fuel pipe and the inner wall of the housing and solidified with silicone resin. The fuel flows through an interior of the fuel pipe in a spiral manner to be fed to the engine.

Abstract: The present invention relates to a semiconductor device with a daisy chain structure having an independent, wherein each of the independent refresh means is additionally added to each of DRAMs being formed in a ring type, thereby independently performing a refresh operation in each DRAM to replace the conventional refresh operation depending on the existing single controller so that it allows easy application the semiconductor device by decreasing a DRAM's dependency to the controller.

Abstract: In a first measurement step, the two test probes of a measurement apparatus are contacted with two of the three phase lines. The measurement apparatus determines the frequency of the three-phase voltage. In a subsequent second measurement step, one of the two test probes is brought into connection with the remaining third phase line. The other test probe is held in contact with the other line. In the second measurement step the voltage level or voltage profile on the third phase line is evaluated inside the measurement apparatus in comparison to the first phase line during one or more time windows of length .pi..

Abstract: A method for fabricating a metal wire of semiconductor devices is provided and comprises the steps of: depositing a barrier metal layer on an insulating film and subjecting the barrier metal layer to SF.sub.6 plasma treatment; forming an aluminum metal layer, a reflection-preventive layer and a photoresist film pattern on the surface of the barrier metal layer, in order; etching the reflection-preventive layer, the aluminum metal layer and the barrier metal layer to form a metal wire, with the photoresist film pattern serving as an etch mask; and removing the photoresist film pattern. The SF.sub.6 plasma treatment leaves no residue on the insulating film 2 during etching, as silicon nodule grows a little on the barrier metal layer when the aluminum metal layer is deposited thereon.

Abstract: There is disclosed a method for making a field oxide, by which wafer warpage is minimized when a local oxidation of silicon process is applied for a large wafer. A material layer having a compressive stress and a nitride are laminated over the back side of a wafer, so that the compressive stress of the material layer complementarily interacts with the tensile stress of the nitride.

Abstract: The present invention refers to an insulating and fixation system of steam tracers in fluid transportation pipings, comprising the supply of a first internal metallic piping (50) with diameter a few larger than the piping (52) to be heated, endowed with equally spaced internal rips (54) in the longitudinal direction for arrangement and fixation of heating extensions (56) and a second external thermoplastic piping (58) being one concentrical to each other, forming an annular space (60) and presenting itself as a double wall tubular cylinder (62), said annular space (60) forming between the said first internal piping (50) and the second external piping (58) being fulfilled with insulating material (64) without any contact with the said piping (52) to be heated or external surroundings.

Abstract: When packing articles, particularly sheet stacks, such as computer lists, for transportation and dispatch purposes in a film, thick stacks should be tightly enveloped with a shrink film envelope, so as to increase their transportation stability, whereas the envelope of thin stacks is to remain unshrunk, so as not to deform the stack. It is proposed that both types of articles be passed in the packing line through the shrinkage tunnel, but in the case of articles not to be shrunk by increasing the passage speed and/or decreasing the circulating air speed, the heat transfer conditions are reduced in such a way that no shrinkage occurs. It is also proposed to so control the welding dies or jaws of a longitudinal welding station as a function of the thickness of the articles that thinner packs are more tightly enveloped than thicker packs.

Abstract: A method for removing surface coatings from the hull of a ship by focusing annular streams of ultra-high pressure water from a rotating nozzle having one or more orifices. The nozzle orifices have oblique angles from the central axis of the rotating nozzle whereby the force of the water leaving the nozzle through the orifice imparts an opposite rotational force to the rotating nozzle. The placement of the orifices on the rotating nozzle is done in such a manner that the annular streams of water act in concert when striking the working surface to remove the paint. A waste water recovery system collects waste water and particulates of paint stripped from the working surface, the particulates are removed for later disposal and the water is recycled.

Abstract: Disclosed is a method for fabricating a semiconductor device, especially suitable for a highly-integrated semiconductor device. In the method, a lower tungsten silicide film having an amorphous construction is formed on a poly silicon film on a gate oxide film formed on a semiconductor substrate. On the lower tungsten silicide film, an upper tungsten silicide film having a plurality of small grains between which gaps are defined. Thereafter, oxide films are formed on the crystallized grains by heat treatment under an oxygen atmosphere.